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    Micron Technology Inc MT4C4001JDJ-6

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    Microchip Technology Inc MT4C4001JDJ-6

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    Micron Industries Corporation MT4C4001JDJ-6

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    MICRON/945 MT4C4001JZ-70

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    Micron Technology Inc MT4C4001JDJ6

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    Bristol Electronics MT4C4001JDJ6 1,794
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    MT4C4001J Datasheets (242)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MT4C4001J Austin Semiconductor 1 MEG x 4 DRAM Fast Page Mode DRAM Original PDF
    MT4C4001J Austin Semiconductor 1 MEG x 4 DRAM Original PDF
    MT4C4001J Micron 1MEG x 4DRAM Scan PDF
    MT4C4001J-10C Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CDIP, 20-Pin Original PDF
    MT4C4001J-10CN Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CDIP, 20-Pin Original PDF
    MT4C4001J-10CZ Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CZIP, 20-Pin Original PDF
    MT4C4001J-10ECG Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CGull Wing, 20-Pin Original PDF
    MT4C4001J-10ECJ Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, SOJ, 20-Pin Original PDF
    MT4C4001J-10ECN Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CLDCC, 20-Pin Original PDF
    MT4C4001J-12C Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CDIP, 20-Pin Original PDF
    MT4C4001J-12CN Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CDIP, 20-Pin Original PDF
    MT4C4001J-12CZ Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CZIP, 20-Pin Original PDF
    MT4C4001J-12ECG Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CGull Wing, 20-Pin Original PDF
    MT4C4001J-12ECJ Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, SOJ, 20-Pin Original PDF
    MT4C4001J-12ECN Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CLDCC, 20-Pin Original PDF
    MT4C4001J-6 Micron standard or self refresh Scan PDF
    MT4C4001J-7 Micron standard or self refresh Scan PDF
    MT4C4001J-7C Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CDIP, 20-Pin Original PDF
    MT4C4001J-7CN Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CDIP, 20-Pin Original PDF
    MT4C4001J-7CZ Austin Semiconductor DRAM Chip, FPM DRAM, 512KByte, 5V Supply, Military, CZIP, 20-Pin Original PDF
    ...

    MT4C4001J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5962-9084703MNA

    Abstract: JEDEC MO-110 ras 0910 5v RAS 0610
    Text: DRAM MT4C4001J Austin Semiconductor, Inc. PIN ASSIGNMENT 1 MEG x 4 DRAM Top View Fast Page Mode DRAM 20-Pin DIP (C, CN) AVAILABLE AS MILITARY SPECIFICATIONS DQ1 DQ2 WE\ RAS\ A9 A0 A1 A2 A3 Vcc • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions, and


    Original     		PDF MIL-STD-883 20-Pin MT4C4001J 300mW 024-cycle refresh62-9084701MNA MT4C4001JC-8/883C 5962-9084703MNA JEDEC MO-110 ras 0910 5v RAS 0610

    fast page mode dram controller

    Abstract: MT4C4001J
    Text: MT4C4001J 883C 1 MEG x 4 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 1 MEG x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions and packages


    Original     		PDF MT4C4001J MIL-STD-883 100ns 120ns 300mW D5000019 fast page mode dram controller

    MT4C4001J

    Abstract: JEDEC MO-110
    Text: DRAM MT4C4001J PIN ASSIGNMENT 1 MEG x 4 DRAM Top View Fast Page Mode DRAM 20-Pin DIP (C, CN) AVAILABLE AS MILITARY DQ1 DQ2 WE\ RAS\ A9 A0 A1 A2 A3 Vcc SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions, and


    Original     		PDF MT4C4001J MIL-STD-883 20-Pin 300mW 024-cycle MT4C4001JC-8/883C MT4C4001JC-10/883C MT4C4001JC-12/883C 5962-9084703MUA 5962-9084702MUA MT4C4001J JEDEC MO-110

    5v RAS 0610

    Abstract: MT4C4001J 12 lead ecg block diagram 3 lead ecg block diagram
    Text: DRAM MT4C4001J Austin Semiconductor, Inc. PIN ASSIGNMENT Top View 1 MEG x 4 DRAM Fast Page Mode DRAM 20-Pin DIP (C, CN) AVAILABLE AS MILITARY SPECIFICATIONS DQ1 DQ2 WE\ RAS\ A9 A0 A1 A2 A3 Vcc • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions, and


    Original     		PDF MT4C4001J 20-Pin MIL-STD-883 300mW 024-cycle 4701MNA MT4C4001JC-8/883C MT4C4001JC-10/883C MT4C4001JC-12/883C MT4C4001JCN-8/883C 5v RAS 0610 MT4C4001J 12 lead ecg block diagram 3 lead ecg block diagram

    ras 0910

    Abstract: 5v RAS 0610 5962-9084703MNA ras 0610 MT4C4001J 12 lead ecg block diagram 3 lead ecg block diagram
    Text: DRAM MT4C4001J Austin Semiconductor, Inc. PIN 1 MEG x 4 DRAM Fast Page Mode DRAM 20-Pin DIP C, CN AVAILABLE AS MILITARY SPECIFICATIONS DQ1 DQ2 WE\ RAS\ A9 A0 A1 A2 A3 Vcc • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions, and


    Original     		PDF MT4C4001J 20-Pin MIL-STD-883 300mW 024-cycle E84701MNA MT4C4001JC-8/883C MT4C4001JC-10/883C MT4C4001JC-12/883C MT4C4001JCN-8/883C ras 0910 5v RAS 0610 5962-9084703MNA ras 0610 MT4C4001J 12 lead ecg block diagram 3 lead ecg block diagram

    5v RAS 0610

    Abstract: dram MT4C4001J 12 lead ecg block diagram JEDEC MO-110
    Text: DRAM MT4C4001J Austin Semiconductor, Inc. PIN ASSIGNMENT 1 MEG x 4 DRAM Top View Fast Page Mode DRAM 20-Pin DIP (C, CN) AVAILABLE AS MILITARY SPECIFICATIONS DQ1 DQ2 WE\ RAS\ A9 A0 A1 A2 A3 Vcc • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions, and


    Original     		PDF MT4C4001J 20-Pin MIL-STD-883 300mW 024-cycle OPTI4701MNA MT4C4001JC-8/883C MT4C4001JC-10/883C MT4C4001JC-12/883C MT4C4001JCN-8/883C 5v RAS 0610 dram MT4C4001J 12 lead ecg block diagram JEDEC MO-110

    FPM DRAM

    Abstract: MARKING PM5 MT4C4001J MT4C4001JDJ-6
    Text: OBSOLETE 1 MEG x 4 FPM DRAM MT4C4001J DRAM FEATURES • 1,024-cycle refresh distributed across 16ms MT4C4001J or 128ms (MT4C4001J L) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply


    Original     		PDF MT4C4001J 024-cycle MT4C4001J) 128ms MT4C4001J 20/26-Pin FPM DRAM MARKING PM5 MT4C4001JDJ-6

    W9C 08

    Abstract: marking W9C MT4C400
    Text: SSE D MICRON TECHNOLOGY INC blllSMT □ 0 G S 7 M C1 3T7 M N R N MT4C4001J 883C 1 MEG X 4 DRAM IC Z R O N MILITARY DRAM 1 MEG X 4 DRAM FAST PAGE MODE PIN ASSIGNMENT Top View • SMD 5962-90847, Class M • JAN 5962-90847, Class B • MIL-STD-883, Class B


    OCR Scan     		PDF MT4C4001J MIL-STD-883, 20-Pin 450mW 024-cycle MIL-STO-883 W9C 08 marking W9C MT4C400

    Untitled

    Abstract: No abstract text available
    Text: MT4C4001 J L 1 MEG X 4 DRAM (M IC R O N DRAM 1 MEG x 4 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and packages


    OCR Scan     		PDF MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J MT4C4001J 275mW 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT4C4001 J S 1 MEG X 4 DRAM (MICRON DRAM 1 MEG x 4 DRAM 5V, STANDARD OR SELF REFRESH • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J S) • Industry-standard pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process


    OCR Scan     		PDF MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J 20/26-Pin 001217T

    T4C4001JDJ-6

    Abstract: mt4c4001
    Text: MT4C4001 J S 1 MEG X 4 DRAM [M IC R O N DRAM 1 MEG X 4 DRAM FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (M T4C4001J S) • Industry-standard pinout, timing, functions and packages • High-perform ance CM O S silicon-gate process


    OCR Scan     		PDF MT4C4001 024-cycle MT4C4001J) 128ms T4C4001J MT4C4001J 225mW 20/26-Pin 20-Pin T4C4001JDJ-6

    marking wml

    Abstract: j-l003 marking WMM C1994 MT4C4001 MT4C4001J MT4C4001JDJ-6
    Text: M ir n O M I .“ hT M T 4C 4001J S 1 M EG X 4 D R A M 1 MEG DRAM X 4 DRAM STANDARD OR SELF REFRESH a J3 > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J S) • Industry-standard pinout, timing, functions and packages


    OCR Scan     		PDF MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J 225mW CI994. marking wml j-l003 marking WMM C1994 MT4C4001JDJ-6

    Untitled

    Abstract: No abstract text available
    Text: 1 MEG X 4 FPM DRAM MICRON I TECHNOLOGY. INC. DRAM M T4C 4001J FEATURES • 1,024-cycle refresh distributed across 16ms MT4C4001J or 128ms (MT4C4001J L) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process


    OCR Scan     		PDF 4001J 024-cycle MT4C4001J) 128ms MT4C4001J 20/26-Pin J1997,

    B1115

    Abstract: mt4c4001 MT4C4001JDJ-6 4c4001 MT4C4001J JCSR
    Text: MICRON SEMICONDUCTOR INC b3E D • b l l l S 4 cì 0D07b2tì 4D2 BURN MT4C4001 J L 1 MEG X 4 DRAM M IC R O N DRAM 1 MEG x 4 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L)


    OCR Scan     		PDF 0007b2cà MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J 275mW B1115 MT4C4001JDJ-6 4c4001 JCSR

    varo semiconductor

    Abstract: MT4C4001 MT4C4001J MT4C4001JDJ-6 MT4C4001JS mtc4001 MT4000
    Text: MT4C4001J S 1 MEG X 4 DRAM MICRON ft stiacoNOucTOH«c- 1 MEG x 4 DRAM DRAM STANDARD OR SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J S) • Industry-standard pinout, timing, functions and


    OCR Scan     		PDF MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J 225mW UT4C4001J CI994. varo semiconductor MT4C4001JDJ-6 MT4C4001JS mtc4001 MT4000

    Untitled

    Abstract: No abstract text available
    Text: «e a a 1981 MICRON MT4C4001 J L 1 MEG X 4 DRAM I DRAM 1 MEG x 4 DRAM STANDARD OR LOW POWER, EXTENDED REFRESH 3J > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and


    OCR Scan     		PDF MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J MT4C4001J 275mW

    Untitled

    Abstract: No abstract text available
    Text: 1 MEG X 4 FPM DRAM ¡M I C R O N DRAM MT4C4001J FEATURES • 1,024-cycle refresh distributed across 16ms MT4C4001J or 128ms (MT4C4001J L) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF 024-cycle MT4C4001J) 128ms MT4C4001J MT4C4001J 20/26-Pin

    RRH cl2

    Abstract: BBU RRH
    Text: MT4C4001 J L 1 MEG X 4 DRAM I^IICRDN DRAM 1 MEG x 4 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and packages


    OCR Scan     		PDF MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J 20-Pin RRH cl2 BBU RRH

    C55T

    Abstract: No abstract text available
    Text: AUSTIN SEMICONDUCTOR INC bOE D • RQQ21L7 OOOQiiOS 44H H A U S T MT4C4001J DIE 1 M EG X 4 DRAM MICRON MILITARY DRAM DIE 1 MEG x 4 DRAM DIE FEATURES DIE OUTLINE (Top View OPTIONS 14 13 12 11 10 5 4 3 2 DIE DATA BA SE D15B PASSIVATION LAYER M A SK # 80B ORDER NUMBER


    OCR Scan     		PDF RQQ21L7 MT4C4001J 450mW 024-cycle C55T

    MT4C4001J

    Abstract: MT4C4001JDJ-6
    Text: MICRON TECHNOLOGY INC SSE » • b lllS H S MICRON B 00042^4 W «MRN MT4C4001J 1 MEG X 4 DRAM TECHNOLOGY. INC DRAM 1 MEG X 4 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process


    OCR Scan     		PDF bill541 00042T4 MT4C4001J -T-tt-tt-18 225mW 024-cycle MT4C4001J MT4C4001JDJ-6

    Untitled

    Abstract: No abstract text available
    Text: 1 MEG X 4 FPM DRAM |U|IC=RON DRAM MT4 C 4 0 0 1 J FEATURES • 1,024-cycle refresh distributed across 16ms MT4C4001J or 128ms (MT4C4001J L) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF 024-cycle MT4C4001J) 128ms MT4C4001J 20/26-Pin 128ms

    Untitled

    Abstract: No abstract text available
    Text: |U |IC=RO N 2 MEG DRAM MODULE X MT18D236 36 DRAM MODULE 2 MEG x 36 DRAM FAST PAGE MODE FEATURES • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process. • Single 5V ±10% power supply • All device pins are fully TTL compatible


    OCR Scan     		PDF MT18D236 72-pin 052mW 024-cycle 72-Pin T18D236M MT180236

    Untitled

    Abstract: No abstract text available
    Text: 1, 2 MEG X 32 DRAM SIMMs MICRON • ItCHtfULOGYIMC D R A M L ^ r iA A lV I MT8D132 X MT16D232(X) MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single in-line m emory module (SIMM) • 4M B (1 M eg x 32) and 8MB (2 M eg x 32)


    OCR Scan     		PDF MT8D132 MT16D232 72-pin, 024-cycle

    Untitled

    Abstract: No abstract text available
    Text: MT6D118 1 MEG X 18 DRAM MODULE M IC R O N 1 MEG X 18 DRAM FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • All device pins are fully TTL compatible


    OCR Scan     		PDF MT6D118 72-pin 250mW 024-cycle MT60118