TFG11
Abstract: No abstract text available
Text: I^ IIC R O N MT4C1026 X 1 DRAM 1 MEG DRAM 1 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT Top View • Industry-standard x l pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply
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MT4C1026
175mW
512-cycle
18-Pin
20-Pin
TFG11
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Untitled
Abstract: No abstract text available
Text: M IC R O N I MT4C1026 X 1 DRAM 1 MEG 1 MEG X 1 DRAM DRAM DRAM STATIC COLUMN FEATURES • Industry-standard x l pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175m W active, typical
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MT4C1026
512-cycle
18-Pin
20-Pin
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Untitled
Abstract: No abstract text available
Text: I^ IC R Q N 1 MEG DRAM 1 MEG X MT4C1026 X 1 DRAM 1 DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical
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MT4C1026
175mW
512-cycle
18-Pin
20-Pin
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Untitled
Abstract: No abstract text available
Text: M IC R O N 1 MEG DRAM MT4C1026 X 1 DRAM 1 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical
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MT4C1026
175mW
512-cycle
18-Pin
20-Pin
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Untitled
Abstract: No abstract text available
Text: MT4C1026 1 MEG X 1 DRAM fU llC R O N 1 MEG DRAM X 1 DRAM STATIC-COLUMN o 3D > FEATURES PIN ASSIGNMENT Top View • Industry-standard x l pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply
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MT4C1026
175mW
512-cycle
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rx3e
Abstract: RX-3E NU89 rx3e 8 pin
Text: MICRON TECHNOLOGY INC fallisi QQ0E047 5 3ÔE D IMRN T - Í Í - 2 3 - l^ 1 MEG X 1 DRAM DRAM S T A T IC FEATURES PIN ASSIGNMENT Top View • Industry standard xl pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V+10% power supply
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QQ0E047
175mW
512-cycle
18-Pin
20-Pin
100ns
300mil)
350mil)
T-46-23-15
rx3e
RX-3E
NU89
rx3e 8 pin
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30-pin simm memory
Abstract: No abstract text available
Text: [M IC R O N MT8C8026 1MEG x 8 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8026 is a randomly accessed solid-state
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MT8C8026
30-pin
1575mW
30-pin simm memory
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TC511000P-10
Abstract: tc511000 Micron TC511001AP MT4C1026-10
Text: -1M CMOS X Si £ tt « i& m m CO D y n a m i c y ^ 'f TRAC isax ns TRCY rain (ns) TCAD min (ns) TAH nin (ns) TP rain (ns) R A M (1 0 4 8 5 7 6 x 1 ) ft tt TWCY ain (ns) TDH min (ns) TRWC rain (ns) V D D or V C C (V) 18 P I N m % I DD max (mA) A I DD STANDBY
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MT4C10Z4-8
MT4C10Z5-10
TC511000P-12
TC511001AP/AJ/AZ-10
TC511001AP/AJ/AZ-70
51Z/8
TC511001AP/AJ/AZ-80
TC511001BFT/BTR-10
TC511000P-10
tc511000
Micron
TC511001AP
MT4C1026-10
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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