Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MICRON Search Results

    SF Impression Pixel

    MICRON Price and Stock

    Olimex A20-OLINUXINO-MICRO-N8G

    SBC 1.0GHZ 2 CORE 1GB/0GB RAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A20-OLINUXINO-MICRO-N8G Bulk 4 1
    • 1 $60.62
    • 10 $60.62
    • 100 $60.62
    • 1000 $60.62
    • 10000 $60.62
    		Buy Now
    TME A20-OLINUXINO-MICRO-N8G 1
    • 1 $52.94
    • 10 $52.12
    • 100 $52.12
    • 1000 $52.12
    • 10000 $52.12
    		Get Quote

    E-Switch Inc EG6201G.05MICRON

    SWITCH SELECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EG6201G.05MICRON Bulk 60
    • 1 -
    • 10 -
    • 100 $1.75183
    • 1000 $1.75183
    • 10000 $1.75183
    		Buy Now
    Mouser Electronics EG6201G.05MICRON
    • 1 $2.12
    • 10 $1.75
    • 100 $1.75
    • 1000 $1.51
    • 10000 $1.32
    		Get Quote
    Newark EG6201G.05MICRON Bulk 1
    • 1 $1.91
    • 10 $1.91
    • 100 $1.91
    • 1000 $1.91
    • 10000 $1.65
    		Buy Now

    TDK Micronas GmbH MICRONAS-EXTENSION-BOARD-V.5.0

    EXTENSION BOARD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MICRONAS-EXTENSION-BOARD-V.5.0 Bulk 1
    • 1 $39
    • 10 $39
    • 100 $39
    • 1000 $39
    • 10000 $39
    		Buy Now

    Ka-Ro electronics GmbH TX53-8030/MICRON

    Computer-On-Modules - COM Freescale iMX537 COM SODIMM IND TEMP LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TX53-8030/MICRON 10
    • 1 $156.54
    • 10 $156.54
    • 100 $156.54
    • 1000 $156.54
    • 10000 $156.54
    		Buy Now

    Olimex A20-OLinuXino-MICRO-n8G

    Single Board Computers
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics A20-OLinuXino-MICRO-n8G
    • 1 $57.24
    • 10 $57.24
    • 100 $57.24
    • 1000 $57.24
    • 10000 $57.24
    		Get Quote
    Find more MICRON price and stock on Findchips.com

    MICRON Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    128MEG-x4/x8/x16-SDRAM-10 Micron 128 MEG: x4, x8, x16 SDRAM Original PDF
    1N4001S Micronas Semiconductor Silicon Rectifiers, Nominal Current 1A, 100 to 1600V Scan PDF
    1N4002S Micronas Semiconductor Silicon Rectifiers, Nominal Current 1A, 100 to 1600V Scan PDF
    1N4003S Micronas Semiconductor Silicon Rectifiers, Nominal Current 1A, 100 to 1600V Scan PDF
    1N4004S Micronas Semiconductor Silicon Rectifiers, Nominal Current 1A, 100 to 1600V Scan PDF
    1N4005S Micronas Semiconductor Silicon Rectifiers, Nominal Current 1A, 100 to 1600V Scan PDF
    1N4006S Micronas Semiconductor Silicon Rectifiers, Nominal Current 1A, 100 to 1600V Scan PDF
    1N4007S Micronas Semiconductor Silicon Rectifiers, Nominal Current 1A, 100 to 1600V Scan PDF
    1N4148S Micronas Semiconductor Silicon Epitaxial Planar Diodes Scan PDF
    1N4149S Micronas Semiconductor 150mA Iout, 100V Vrrm Fast Recovery Rectifier Scan PDF
    1N4154 Micronas Semiconductor Silicon Epitaxial Planar Diode Scan PDF
    1N4154S Micronas Semiconductor 150mA Iout, 35V Vrrm Fast Recovery Rectifier Scan PDF
    1N4305 Micronas Semiconductor General Purpose and Switching Diodes in a DO-35 Package Scan PDF
    1N4446 Micronas Semiconductor Fast Switching Diode Scan PDF
    1N4446S Micronas Semiconductor 150mA Iout, 100V Vrrm Fast Recovery Rectifier Scan PDF
    1N4447S Micronas Semiconductor 150mA Iout, 100V Vrrm Fast Recovery Rectifier Scan PDF
    1N4448 Micronas Semiconductor Fast Switching Diode Scan PDF
    1N4448S Micronas Semiconductor 150mA Iout, 100V Vrrm Fast Recovery Rectifier Scan PDF
    1N4449S Micronas Semiconductor 150mA Iout, 100V Vrrm Fast Recovery Rectifier Scan PDF
    1N456A Micronas Semiconductor General Purpose and Switching Diodes in a DO-35 Package Scan PDF
    ...

    MICRON Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SGA-4563 Z SGA-4563(Z) DC to 2500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 2500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA-4563 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and


    Original     		SGA-4563 2500MHz, OT-363 31mil DS091118 SGA-4563 PDF

    N25Q256

    Abstract: No abstract text available
    Text: 512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25QAx3G12x0x, N25QAx3GF8x0x, N25QAx3GSFx0x Features • • • • • • • • • • • • • • • • • • Write protection


    Original     		512Mb, N25QAx3G12x0x, N25QAx3GF8x0x, N25QAx3GSFx0x 256Mb 09005aef84752721 N25Q256 PDF

    CDFP4-F16

    Abstract: HCTS193DMSR HCTS193HMSR HCTS193KMSR HCTS193MS
    Text: HCTS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ)


    Original     		HCTS193MS -55oC 125oC 05A/cm2 HCTS193 TA14451A. CDFP4-F16 HCTS193DMSR HCTS193HMSR HCTS193KMSR HCTS193MS PDF

    SO56-2

    Abstract: No abstract text available
    Text: IDT54/74FCT162701T/AT FAST CMOS 18-BIT READ/WRITE BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES FAST CMOS 18-BIT READ/WRITE BUFFER DESCRIPTION: FEATURES: − − − − − − − − − − − − − − IDT54/74FCT162701T/AT 0.5 MICRON CMOS Technology


    Original     		IDT54/74FCT162701T/AT 18-BIT 250ps MIL-STD-883, 200pF, SO56-1) SO56-2) SO56-2 PDF

    EPA240D

    Abstract: No abstract text available
    Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		EPA240D 33dBm EPA240D PDF

    2012 ics class X date sheet

    Abstract: HCS32D HCS32DMSR HCS32HMSR HCS32K HCS32KMSR HCS32MS
    Text: HCS32MS Radiation Hardened Quad 2-Input OR Gate September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		HCS32MS MIL-STD-1835 CDIP2-T14 -55oC 125oC 05A/cm2 2012 ics class X date sheet HCS32D HCS32DMSR HCS32HMSR HCS32K HCS32KMSR HCS32MS PDF

    HCS109MS

    Abstract: CDFP4-F16 HCS109DMSR HCS109HMSR HCS109KMSR HCS109
    Text: HCS109MS Radiation Hardened Dual JK Flip Flop September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		HCS109MS MIL-STD-1835 CDIP2-T16, 05A/cm2 HCS109 TA14340A. HCS109MS CDFP4-F16 HCS109DMSR HCS109HMSR HCS109KMSR PDF

    MT48LC4M32B2P

    Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
    Text: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive


    Original     		128Mb: MT48LC4M32B2 PC100 096-cycle 09005aef80872800/Source: 09005aef80863355 128MbSDRAMx32 MT48LC4M32B2P MT48LC4M32B2TG-7 MT48LC4M32B2 PDF

    HCS244DMSR

    Abstract: HCS244HMSR HCS244KMSR HCS244MS
    Text: HCS244MS Radiation Hardened Octal Buffer/Line Driver, Three-State September 1995 Features Pinouts 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T20 TOP VIEW • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si)/s


    Original     		HCS244MS MIL-STD-1835 CDIP2-T20 HCS244DMSR HCS244HMSR HCS244KMSR HCS244MS PDF

    MT48LC2M32B2P

    Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
    Text: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock


    Original     		MT48LC2M32B2 PC100 096-cycle 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 MT48LC2M32B2P MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612 PDF

    ALVC126

    Abstract: IDT74ALVC126
    Text: IDT74ALVC126 3.3V CMOS QUADRUPLE BUS BUFFER GATE EXTENDED COMMERCIAL TEMPERATURE RANGE 3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS IDT74ALVC126 ADVANCE INFORMATION DESCRIPTION: FEATURES: – – 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015;


    Original     		IDT74ALVC126 MIL-STD-883, 200pF, ALVC126: SO14-2) SO14-3) ALVC126 IDT74ALVC126 PDF

    HCS164DMSR

    Abstract: HCS164HMSR HCS164KMSR HCS164MS
    Text: HCS164MS Radiation Hardened 8-Bit Serial-In/Parallel-Out Register September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)


    Original     		HCS164MS MIL-STD-1835 CDIP2-T14, 94mils 05A/cm2 HCS164DMSR HCS164HMSR HCS164KMSR HCS164MS PDF

    CDFP4-F16

    Abstract: HCS193DMSR HCS193HMSR HCS193KMSR HCS193MS
    Text: HCS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)


    Original     		HCS193MS MIL-STD-1835 CDIP2-T16, -55oC 125oC 05A/cm2 CDFP4-F16 HCS193DMSR HCS193HMSR HCS193KMSR HCS193MS PDF

    513 s12 datasheet

    Abstract: EPA060BV EPA060B
    Text: Excelics EPA060B/EPA060BV DATA SHEET High Efficiency Heterojunction Power FET  • • • • • • • •  +26.5dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA060B AND 11.5dB FOR EPA060BV AT 18GHz 0.4dB TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE


    Original     		EPA060B/EPA060BV EPA060B EPA060BV 18GHz EPA060B MA162 Rn/50 513 s12 datasheet PDF

    BI resistor network

    Abstract: PLL650-05SC PLL650-05SC-R
    Text: PLL650-05 Low EMI Network LAN Clock FEATURES • • • • • • • Full CMOS output swing with 40-mA output drive capability. 25-mA output drive at TTL level. Advanced, low power, sub-micron CMOS processes. 25MHz fundamental crystal or clock input. 3 fixed outputs of 25MHz, 75Mhz and 125Mhz with


    Original     		PLL650-05 40-mA 25-mA 25MHz 25MHz, 75Mhz 125Mhz 140MHz 16-Pin 150mil BI resistor network PLL650-05SC PLL650-05SC-R PDF

    HCTS86D

    Abstract: HCTS86DMSR HCTS86HMSR HCTS86K HCTS86KMSR HCTS86MS
    Text: HCTS86MS TM Radiation Hardened Quad 2-Input Exclusive OR Gate October 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)


    Original     		HCTS86MS MIL-STD-1835 CDIP2-T14, -55oC 125oC HCTS86D HCTS86DMSR HCTS86HMSR HCTS86K HCTS86KMSR HCTS86MS PDF

    vw 9a engines

    Abstract: ACTS373DMSR ACTS373HMSR ACTS373KMSR ACTS373MS
    Text: ACTS373MS Radiation Hardened Octal Transparent Latch, Three-State April 1995 Features Pinouts 20 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T20, LEAD FINISH C TOP VIEW • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD Si • Single Event Upset (SEU) Immunity


    Original     		ACTS373MS MIL-STD-1835 CDIP2-T20, -55oC 125oC vw 9a engines ACTS373DMSR ACTS373HMSR ACTS373KMSR ACTS373MS PDF

    HCTS245DMSR

    Abstract: HCTS245HMSR HCTS245KMSR HCTS245MS
    Text: HCTS245MS TM Radiation Hardened Octal Bus Transceiver, Three-State, Non-Inverting September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T20 TOP VIEW • Total Dose 200K RAD (Si)


    Original     		HCTS245MS MIL-STD-1835 CDIP2-T20 HCTS245DMSR HCTS245HMSR HCTS245KMSR HCTS245MS PDF

    TC160G

    Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
    Text: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate


    OCR Scan     		TC170C 250ps TC160G toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29 PDF

    tc183

    Abstract: E17G tc183G TC163G TC180G single port RAM TC183e Toshiba TC8570
    Text: TOSHIBA TC183G/ECMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3,3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the power savings of a 3V core


    OCR Scan     		TC183G/ECMOS TheTC183G/E 230ps TC160G TC163G tc183 E17G tc183G TC180G single port RAM TC183e Toshiba TC8570 PDF

    TC160G33

    Abstract: TC160G11 TC160G22 TC160G16 TC160G70 TC140G TC160G
    Text: TOSHIBA T O S H I B A A M E R I C A E L E C T R O N IC C O M P O N E N T S , I N C . Preliminary TC160G and TC163G CMOS 0.8 micron Gate Arrays for Low Voltage Operation 3V/3.3V Description The T C 160G and T C 163G 0.8 m icro n ga te arra y series o p e ra te at 3 V ± 0 .3 V or 3 .3 V ± 0 .3 V low vo lta g e . T hey have


    OCR Scan     		TC160G TC163G TCH72M7 TC160G33 TC160G11 TC160G22 TC160G16 TC160G70 TC140G PDF

    low noise pseudomorphic

    Abstract: No abstract text available
    Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ] j P E R I C O M 16-Bit Transparent D-Type Latch with 3-State Outputs Product Features Product Description • The PI74VCX Family is designed for low voltage operation, V dd = 1.8V to 3.6V Pericom Semiconductor’s PI74VCX series of logic circuits are produced in the Company’s advanced 0.35 micron CMOS


    OCR Scan     		16-Bit PI74VCX 48-pin PS8326 PDF

    8251a usart interface from z80

    Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
    Text: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn


    OCR Scan     		L4E75BS 80C42H D043fl23 8251a usart interface from z80 UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4 PDF