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    Toshiba America Electronic Components MT3S03AT(TE85L,F)

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    Quest Components MT3S03AT(TE85L,F) 2,041
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    MT3S03A Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MT3S03A Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    MT3S03A Toshiba Scan PDF
    MT3S03AFS Toshiba VHF~UHF Band Low-Noise Amplifier Applications Original PDF
    MT3S03AS Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    MT3S03AS Toshiba Scan PDF
    MT3S03AT Toshiba Scan PDF
    MT3S03AT Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    MT3S03AU Toshiba Scan PDF
    MT3S03AU Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

    MT3S03A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Mounted Devices Three pin SSM type part No. Q1 Q2 MT3S07S MT3S03AS Absolute Maximum Ratings Ta = 25°C


    Original     		PDF MT6L62AE MT3S07S MT3S03AS

    MT3S03AT

    Abstract: 014E 200E 800E
    Text: MT3S03AT SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S03AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0


    Original     		PDF MT3S03AT MT3S03AT 014E-02 260E-10 800E-13 346E-14 014E 200E 800E

    transistor 14315

    Abstract: 14315
    Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB at f = 2 GHz • High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF MT3S03AT transistor 14315 14315

    MT3S03AFS

    Abstract: DSA0024106
    Text: MT3S03AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AFS Unit: mm Superior performance in oscillator and Buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 5.5 dB f = 2 GHz


    Original     		PDF MT3S03AFS MT3S03AFS DSA0024106

    MT3S03A

    Abstract: No abstract text available
    Text: MT3S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol


    Original     		PDF MT3S03A SC-59 MT3S03A

    MT3S03A

    Abstract: No abstract text available
    Text: MT3S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF MT3S03A MT3S03A

    of ic 8038

    Abstract: MT3S03AT IC 7486 ic 7815
    Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB typ. (at f = 2 GHz) • High gain: gain = 8dB (typ.) (at f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF MT3S03AT of ic 8038 MT3S03AT IC 7486 ic 7815

    MT3S03AFS

    Abstract: No abstract text available
    Text: MT3S03AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AFS Unit: mm Superior performance in oscillator and Buffer applications Superior noise characteristics 0.6±0.05 • • 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 5.5 dB f = 2 GHz


    Original     		PDF MT3S03AFS MT3S03AFS

    MT3S03AU

    Abstract: No abstract text available
    Text: MT3S03AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF MT3S03AU MT3S03AU

    MT3S03AU

    Abstract: No abstract text available
    Text: MT3S03AU 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03AU ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.4dB, |S21e |2 単位: mm = 8dB f = 2 GHz 絶対最大定格 (Ta = 25°C)


    Original     		PDF MT3S03AU SC-70 MT3S03AU

    Untitled

    Abstract: No abstract text available
    Text: MT3S03AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF MT3S03AU SC-70 S21e2

    MT3S03AS

    Abstract: No abstract text available
    Text: MT3S03AS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03AS ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.4dB, |S21e |2 単位: mm = 8dB f = 2 GHz 絶対最大定格 (Ta = 25°C)


    Original     		PDF MT3S03AS MT3S03AS

    MT3S03A

    Abstract: No abstract text available
    Text: MT3S03A 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03A ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • NF = 1.4dB f=2GHz ，|S21e |2 単位: mm = 8dB (f = 2 GHz) 絶対最大定格 (Ta = 25°C) 項 目 記


    Original     		PDF MT3S03A SC-59 MT3S03A

    MT3S03AS

    Abstract: No abstract text available
    Text: MT3S03AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF MT3S03AS MT3S03AS

    Untitled

    Abstract: No abstract text available
    Text: MT3S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF MT3S03A

    MT6L58AFS

    Abstract: MT3S03AFS MT3S03AT MT3S06FS MT3S06T
    Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05


    Original     		PDF MT6L58AFS MT3S03AFS) MT3S06FS) MT3S03AT MT3S06T MT6L58AFS MT3S03AFS MT3S03AT MT3S06FS MT3S06T

    working of ic 8038

    Abstract: marking 5241 MT3S03AT ic 7815 IC 7486 specifications of ic 8038 8250 bridge
    Text: MT3S03AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB at f = 2 GHz • High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF MT3S03AT 002oducts working of ic 8038 marking 5241 MT3S03AT ic 7815 IC 7486 specifications of ic 8038 8250 bridge

    Untitled

    Abstract: No abstract text available
    Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 6 2 5 3


    Original     		PDF MT6L58AFS MT3S06T MT3S06FS) MT3S03AT MT3S03AFS)

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT3S03AU 000707EAA1

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.4 dB at f = 2 GHz TTirrV» fio i n JJlg ll V ^ U lll


    OCR Scan     		PDF MT3S03AT IS21I2

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT3S03AU

    MT3S03AU

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 2.1 ¿ 0.1 Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz 1 .2 5 Ì0 .1 -EU


    OCR Scan     		PDF MT3S03AU SC-70 000707EAA1 MT3S03AU

    MT3S03AS

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz 1.6 ± 0.2 ,0.8 ±0.1, r—


    OCR Scan     		PDF MT3S03AS 000707EAA1 MT3S03AS

    MT3S03A

    Abstract: No abstract text available
    Text: TO SH IBA MT3S03A TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03A V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB at f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT3S03A SC-59 000707EAA1 MT3S03A