Untitled
Abstract: No abstract text available
Text: MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Mounted Devices Three pin SSM type part No. Q1 Q2 MT3S07S MT3S03AS Absolute Maximum Ratings Ta = 25°C
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MT6L62AE
MT3S07S
MT3S03AS
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Untitled
Abstract: No abstract text available
Text: MT3S07S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07S VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm
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MT3S07S
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MT3S07S
Abstract: No abstract text available
Text: MT3S07S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07S VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm
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MT3S07S
MT3S07S
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Untitled
Abstract: No abstract text available
Text: MT6L55E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.
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MT6L55E
MT3S07S
MT3S07T)
MT3S05T
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Untitled
Abstract: No abstract text available
Text: MT6L61AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO
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MT6L61AE
MT3S07S
MT3S04AS
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Untitled
Abstract: No abstract text available
Text: MT6L56E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L56E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.
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MT6L56E
MT3S07S
MT3S07T)
MT3S08T
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Untitled
Abstract: No abstract text available
Text: MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage
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MT6L62AE
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Untitled
Abstract: No abstract text available
Text: MT6L55S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L55S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6
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MT6L55S
MT3S07S
MT3S07T)
MT3S005T
40ments,
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Untitled
Abstract: No abstract text available
Text: MT6L62AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L62AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
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MT6L62AS
MT3S07S
MT3S03AS
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Untitled
Abstract: No abstract text available
Text: MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Maximum Ratings Ta = 25°C Characteristics Rating Symbol Unit Q1 Q2 Collector-base voltage VCBO 10 10
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MT6L62AE
MT3S07S
MT3S03AS
000707EAA1
S21e2
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Untitled
Abstract: No abstract text available
Text: MT6L62AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
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MT6L62AS
MT3S07S
MT3S03AS
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Untitled
Abstract: No abstract text available
Text: MT6L62AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO
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MT6L62AT
MT3S07S
MT3S03AS
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Untitled
Abstract: No abstract text available
Text: MT6L55E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.
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MT6L55E
MT3S07S
MT3S07T)
MT3S005T
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MT6L55E
Abstract: MT3S07S MT3S07T
Text: MT6L55E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.
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MT6L55E
MT3S07S
MT3S07T)
MT3S005T
MT6L55E
MT3S07S
MT3S07T
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TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
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BCJ0003G
BCJ0003F
TA4029CTC
TA4032FT
TB7602TU
MT4S300T
MT4S300U
MT4S301T
TA4029TU
SOT-24
MT4S300
RFM12U7X
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MT3S07S
Abstract: MT3S04AS MT6L61AT
Text: MT6L61AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO
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MT6L61AT
MT3S07S
MT3S04AS
MT6L61AT
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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BCE0003D
S-167
BCE0003E
sec 2sc5088
samsung UHF/VHF TV Tuner
2SC5066 datasheet
RF Bipolar Transistor
transistor 2SC5066
2SC5088 SEC
MT6L04AE
MT4S200T
AU82
MT6L63FS
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MT4S300T
Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones
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BCE0003F
MT4S300T
TA4032FT
MT3S111TU
JAPANESE 2SC TRANSISTOR 2010
MT4S301T
TA4029CTC
TB7602CTC
MT3S111P
JAPANESE TRANSISTOR 2SC 2010
2sk3476
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MT3S07S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07S Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB ( V C E = 3 V, Ic = 15mA, f = 2GHz)
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MT3S07S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MT3S07S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07S Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure NF = 1.5 dB High Gain |S2iel2 = 9.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz (VCE = 3 V, IC = 15 mA, f = 2 GHz)
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MT3S07S
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MT3S07S
Abstract: No abstract text available
Text: TO SH IBA MT3S07S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07S Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS NF = 1.5 dB Vf!F, = 3 V, In = 5 mA, f = 2 GHz Low Noise Figure • High Gain : IS o i J 2 = Q K 1.6 ± 0.2 r—:—1
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MT3S07S
MT3S07S
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c
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MT6L59E
MT3S06S
MT3S06T)
MT3S07S
MT3S07T)
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c
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MT6L59E
MT3S06S
MT3S06T)
MT3S07S
MT3S07T)
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MT3S07S
Abstract: MT3S07T MT6P07E
Text: TO SH IBA MT6P07E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6P07 E Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6 pins package : ES6 MOUNTED DEVICES 5 B- Q1/Q2 : SSM (TESM)
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MT6P07E
MT6P07
MT3S07S
MT3S07T)
MT3S07S
MT3S07T
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