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    MT3S06FS Search Results

    MT3S06FS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT3S06FS Toshiba VHF~UHF Band Low-Noise Amplifier Applications Original PDF

    MT3S06FS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    210E

    Abstract: 600E MT3S06FS 1200E-01
    Text: MT3S06FS SPICE parameters UCB SPICE 2G6 20020704 NET LIST .SUBCKT MT3S06FS 1 2 3 Le1 Le2 Ceg1 Ceg2 Lb1 Lb2 Cbg1 Cbg2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 3 6 6 9 6 0 9 0 2 5 5 8 5 0 8 0 1 4 4 7 4 0 7 0 5 6 7 8 7 9 9 20 12 20 8 17


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    PDF MT3S06FS 920E-11 910E-14 770E-14 210E 600E 1200E-01

    MT3S06FS

    Abstract: No abstract text available
    Text: MT3S06FS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S06FS 単位: mm • 雑音特性が優れています。 2 : NF = 1.7 dB, |S21e| = 8.5 dB f = 2 GHz 0.2±0.05 Buffer 用途に優れています。 0.6±0.05 0.35±0.05


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    PDF MT3S06FS MT3S06FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic


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    PDF MT6L57AFS MT3S06T MT3S06FS) MT3S04AT MT3S04AFS)

    MT6L76FS

    Abstract: No abstract text available
    Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


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    PDF MT6L76FS MT3S06FS MT3S106FS MT6L76FS

    transistor amplifier VHF/UHF

    Abstract: MT3S06FS
    Text: MT3S06FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06FS Unit: mm Superior performance in buffer applications Superior noise characteristics : NF = 1.7 dB, |S21e|2 = 8.5 dB f = 2 GHz 1 3 2 0.1±0.05 +0.02 Lead (Pb)-free. 0.8±0.05 1.0±0.05


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    PDF MT3S06FS transistor amplifier VHF/UHF MT3S06FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. (MT3S06FS) (MT3S11FS) Rating Symbol Unit Q1 Q2 Collector-base voltage


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    PDF MT6L68FS MT3S06T MT3S06FS) MT3S11T MT3S11FS)

    MT3S06FS

    Abstract: MT3S06T MT3S11FS MT3S11T MT6L68FS
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)


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    PDF MT6L68FS MT3S11FS) MT3S06FS) MT3S11T MT3S06T MT3S06FS MT3S06T MT3S11FS MT3S11T MT6L68FS

    MT6L76FS

    Abstract: No abstract text available
    Text: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10


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    PDF MT6L76FS MT3S06FS MT3S106FS MT6L76FS

    MT6L58AFS

    Abstract: MT3S03AFS MT3S03AT MT3S06FS MT3S06T
    Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05


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    PDF MT6L58AFS MT3S03AFS) MT3S06FS) MT3S03AT MT3S06T MT6L58AFS MT3S03AFS MT3S03AT MT3S06FS MT3S06T

    MT3S06FS

    Abstract: No abstract text available
    Text: MT3S06FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06FS Unit: mm Superior performance in buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 8.5 dB f = 2 GHz 0.35±0.05


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    PDF MT3S06FS MT3S06FS

    MT3S06FS

    Abstract: No abstract text available
    Text: MT3S06FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06FS Unit: mm Superior performance in buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.7 dB, |S21e| = 8.5 dB f = 2 GHz 0.35±0.05


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    PDF MT3S06FS MT3S06FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 6 2 5 3


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    PDF MT6L58AFS MT3S06T MT3S06FS) MT3S03AT MT3S03AFS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)


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    PDF MT6L68FS MT3S06T MT3S06FS) MT3S11T MT3S11FS)

    MT3S04AFS

    Abstract: MT3S04AT MT3S06FS MT3S06T MT6L57AFS
    Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S04AT MT3S06FS (MT3S04AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05


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    PDF MT6L57AFS MT3S04AFS) MT3S06FS) MT3S04AT MT3S06T MT3S04AFS MT3S04AT MT3S06FS MT3S06T MT6L57AFS

    Untitled

    Abstract: No abstract text available
    Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S03AT (MT3S06FS) (MT3S03AFS) Maximum Ratings (Ta = 25°C) Characteristic


    Original
    PDF MT6L58AFS MT3S06T MT3S06FS) MT3S03AT MT3S03AFS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.


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    PDF MT6L57AFS MT3S06T MT3S06FS) MT3S04AT MT3S04AFS)

    IC MARKING 1005 5 pin

    Abstract: No abstract text available
    Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.


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    PDF MT6L58AFS MT3S06T MT3S06FS) MT3S03AT MT3S03AFS) IC MARKING 1005 5 pin

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


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    PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


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    PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


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    PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000

    2sc5108

    Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
    Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,


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    PDF BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


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    PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    MT4S300T

    Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
    Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones


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    PDF BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476