WT16LD
Abstract: tc 97101 INTERNAL DIAGRAM OF IC 7476
Text: PRELIMINARY M IC n a iM 1 M T 16LD T 164(S), M T16LD(T)464(X)(S) 1 MEG, 4 MEG X 64 DRAM M OD ULES 1 MEG, 4 MEG x 64 DRAM MODULE 8, 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin,
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T16LD
168-pin,
024-cycle
128ms
048-cycle
MT16LD
WT16LD
tc 97101
INTERNAL DIAGRAM OF IC 7476
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tc 97101
Abstract: No abstract text available
Text: ADVANCE MT16LD T 464(S) M IC R O N 4 MEG x 64 DRAM M OD ULE 4 MEG x 64 DRAM 3.3V, OPTIONAL SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • High-perform ance CM OS silicon-gate process • Single +3.3V ±0.3V power supply
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MT16LD
168-pin,
048-cycle
128ms
DE-24)
T16LD
MT16ID
A0-A11
tc 97101
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MT8LD432
Abstract: MT16LD832 MT4LC4
Text: ADVANCE MICRON I MT8LD432 X (S), MT16LD832(X)(S) 4 MEG, 8 MEG x 32 DRAM MODULE DRAM 4 M E G , 8 M EG x 32 _ _ Ä _ _ . . 16, 32 MEGABYTE, 3 .3V, OPTIONAL SELF M D U m o d e ESH’ O L E FEATURES PIN ASSIGNMENT (Front View) 72-Pin SIMM • JE D E C -sta n d a rd p in o u t m a 72-p in sin g le-in -lin e
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MT8LD432
MT16LD832
048-cy
MTSLD432
MT16LD3J2
MT4LC4
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marking d432
Abstract: No abstract text available
Text: ADVANCE M T8LD432 X (S), M T16LD832(X)(S) 4 MEG. 8 MEG x 32 DRAM M OD ULE jU IIC R O N 4 MEG, 8 MEG x 32 DRAM MODULE 16, 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 72-Pin SIMM • JEDEC-standard pinout in a 72-pin single-in-line
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T8LD432
T16LD832
72-pin
048-cycle
128ms
MT8LD432
MT16L0832
marking d432
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MT4LC4M4G6
Abstract: No abstract text available
Text: ADVANCE M IC n a iS I I MT4LD T 164A B, MT8LD264A B, MT16LD464A B 1,2, 4 MEG X 64 BURST EDO DRAM MODULES 1, 2, 4 MEG X 64 BURST EDO DRAM MODULE 8, 16, 32 MEGABYTE, 3.3V, NONBUFFERED, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line memory module (DIMM)
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MT8LD264A
MT16LD464A
168-Pin
168-pin,
024-cycle
048-cycle
MT8LD264AB.
MT4LC4M4G6
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4LD T 164A (X), MT8LD264A (X), MT16LD464A (X) 1, 2, 4 MEG X 64 DRAM MODULES MICRON I TECHNOLOGY. INC. 1, 2, 4 MEG DRAM MODULE 8, 16, 32 MEGABYTE, NONBUFFERED, 3.3V, EDO OR FAST PAGE MODE FEATURES • • • • • • • • • • X 64 PIN ASSIGNMENT (Front View)
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MT8LD264A
MT16LD464A
168-Pin
168-pin,
024-cycle
048-cycle
DE-12
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY l^ iic n a N 4 MEG X MT16LD464 X 64 DRAM MODULE DRAM 4 MEG x 64 M O n i l l F IV IV U U U b 32 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM) • High-performance CMOS silicon-gate process
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MT16LD464
168-pin,
88QmW
048-cycle
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M M Q N MT16LD T 164(S), MT16LD(T)464(X)(S) 1 MEG, 4 MEG X 64 DRAM MODULES I DRAM |y | 0 Q 18, 32MEG’ 4 MEG x 64 MEGABYTE, 3.3V, OPTIONAL SELF L £ REFF^ESH, FAST PAGE OR EDO PAGE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC- and industry-standard pinout in a 168-pin,
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MT16LD
168-Pin
168-pin,
024-cycle
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