WT16LD
Abstract: tc 97101 INTERNAL DIAGRAM OF IC 7476
Text: PRELIMINARY M IC n a iM 1 M T 16LD T 164(S), M T16LD(T)464(X)(S) 1 MEG, 4 MEG X 64 DRAM M OD ULES 1 MEG, 4 MEG x 64 DRAM MODULE 8, 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin,
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T16LD
168-pin,
024-cycle
128ms
048-cycle
MT16LD
WT16LD
tc 97101
INTERNAL DIAGRAM OF IC 7476
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC m n N 1 MT8LD T 132(X)(S), M T16LD(T)232(X)(S) 1 MEG, 2 MEG X 32 DRAM M ODULES DRAM 1 m e g , 2 MEG x 32 4, 8 MEGABYTE, 3.3V, OPTIONAL SELF M O D U L E m o d e ESH’ FAST PAGE ° R ED° PAGE FEATURES PIN ASSIGNMENT (Front View) OPTIONS Timing
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T16LD
72-pin
800mW
024-cycle
128ms
MT16LD
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marking d432
Abstract: No abstract text available
Text: ADVANCE M T8LD432 X (S), M T16LD832(X)(S) 4 MEG. 8 MEG x 32 DRAM M OD ULE jU IIC R O N 4 MEG, 8 MEG x 32 DRAM MODULE 16, 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 72-Pin SIMM • JEDEC-standard pinout in a 72-pin single-in-line
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T8LD432
T16LD832
72-pin
048-cycle
128ms
MT8LD432
MT16L0832
marking d432
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M T8LD 432 S , M T16LD 832(S ) 4 MEG, 8 MEG X 32 DRAM M O D ULE I 4 MEG, 8 MEG X 32 DRAM MODULE 3.3V 16, 32 MEGABYTES OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS 72-Pin SIMM (DE-19) 4 Meg x 32 (DE-11) 8 Meg x 32 MT16D832M/G S
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T16LD
72-pin
048-cycle
048cycle
128ms
A0-A10
MT6LD432IS)
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON M T16LD T 464(S) 4 MEG X 64 DRAM MODULE I 4 MEG X 64 DRAM 3.3V, OPTIONAL SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • High-perform ance CM OS silicon-gate process • Single +3.3V ±0.3V pow er supply
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168-pin,
048-cycle
MT16LD
A0-A11
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Untitled
Abstract: No abstract text available
Text: fax id: 7051 CY74FCT163374 CY74FCT163H374 CY74FCT163LD374 CY74FCT163LDH374 16-Bit Registers CY74FCT163LD2374 Features • • • . • • Low power, pin-compatible replacem ent for LCX, LPT, LVC, LVCH & LVT fam ilies • 5V tolerant inputs and outputs* • 6 mA & 24 mA balanced drive outputs
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CY74FCT163374
CY74FCT163H374
CY74FCT163LD374
CY74FCT163LDH374
16-Bit
CY74FCT163LD2374
25-mil
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Untitled
Abstract: No abstract text available
Text: 1>2’4 M E Gx64 MICRQN I NONBUFFERED DRAM DIMMs TECHNOLOGY, INC. H R AM MT4LDT164A X , MT8LD264A(X), T16LD464A(X) U r iM IV I R A IV I I I ! For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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MT4LDT164A
MT8LD264A
MT16LD464A
168-pin,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON 4 MEG DRAM MODULE X T16LD464(X 64 DRAM MODULE 4 MEG x 64 32 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line m em ory m odule (DIMM) • H igh-perform ance CM OS silicon-gate process
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MT16LD464
168-pin,
880mW
048-cycle
168-pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N I ii^ n w r w T16LD T 164(S) ! MEG x 64 DRAM MODULE 1 MEG x 64 DRAM 3.3V, OPTIONAL EXTENDED REFRESH, SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • H igh-perform ance CMOS silicon-gate process
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MT16LD
168-pin,
200mW
024-cycle
128ms
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WT6L
Abstract: MT81D264
Text: ADVANCE MT4LD T 164 B(N), MT8LD264 B(N), T16LD464 B(N) 1, 2, 4 MEG x 64 RURST EDO DRAM MODULES p ilC R O N 1,2, 4 MEG x 64 BURST EDO DRAM MODULE 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line m em ory module (DIMM)
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MT8LD264
MT16LD464
168-pin,
024-cycle
048-cycle
T16LD4WCBR
000xB
MT8L0264B
WT6L
MT81D264
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tc 97101
Abstract: No abstract text available
Text: ADVANCE |V |C = R O N 1 MEG DRAM MODULE X T16LD T 164(S) 64 DRAM MODULE 1 MEG x 64 DRAM FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • High-perform ance CM OS silicon-gate process • Single +3.3V +0.3V power supply
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MT16LD
168-pin,
024-cycle
128ms
DE-24)
DE-25)
tc 97101
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tc 97101
Abstract: No abstract text available
Text: ADVANCE T16LD T 464(S) M IC R O N 4 MEG x 64 DRAM M OD ULE 4 MEG x 64 DRAM 3.3V, OPTIONAL SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • High-perform ance CM OS silicon-gate process • Single +3.3V ±0.3V power supply
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MT16LD
168-pin,
048-cycle
128ms
DE-24)
T16LD
MT16ID
A0-A11
tc 97101
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Untitled
Abstract: No abstract text available
Text: M in P n M I n'mmn'zSE£ 8, 16, 32 MEG x 64 NONBUFFERED DRAM DIMMs n D A M u IlM IV I •t m I I I IW IIIIJ l | | MT8LD864A X, T16LD1664A X, MT32LD3264A X For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com /m ti/m sp/htm l/
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MT8LD864A
MT16LD1664A
MT32LD3264A
168-pin,
096-cycle
168-PIN
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MT8LD432
Abstract: MT16LD832 MT4LC4
Text: ADVANCE MICRON I MT8LD432 X (S), T16LD832(X)(S) 4 MEG, 8 MEG x 32 DRAM MODULE DRAM 4 M E G , 8 M EG x 32 _ _ Ä _ _ . . 16, 32 MEGABYTE, 3 .3V, OPTIONAL SELF M D U m o d e ESH’ O L E FEATURES PIN ASSIGNMENT (Front View) 72-Pin SIMM • JE D E C -sta n d a rd p in o u t m a 72-p in sin g le-in -lin e
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MT8LD432
MT16LD832
048-cy
MTSLD432
MT16LD3J2
MT4LC4
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Untitled
Abstract: No abstract text available
Text: M I C I n n R O N 8 >16 >32 M E G x 64 NONBUFFERED DRAM DIMMs MT8LD864A X, T16LD1664A X, MT32LD3264A X A M U r iM IV I R A I IVI I I F or the latest data sheet revisions, please refer to the Micron Web site: www.m icron.com/m ti/msp/htm l/datasheet.htm l
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MT8LD864A
MT16LD1664A
MT32LD3264A
168-pin,
128MB
256MB
096-cycle
168-PIN
DF-41
256MB)
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Untitled
Abstract: No abstract text available
Text: 1, 2, 4 MEG X 64 NONBUFFERED DRAM DIMMs M IC R O N DRAM MODULE MT4LD(T 164A(X) MT8LD264A(X) T16LD464A(X) FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC pin-out in a 168-pin, dual in-line memory module (DIMM) • 8MB (1 Meg x 64), 16MB (2 Meg x 64),
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MT8LD264A
MT16LD464A
168-Pin
168-pin,
024-cycle
048-cycle
lti732
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MT16C
Abstract: No abstract text available
Text: ADVANCE M 1 ir n n M .“ L:? MTSLD432X S r T16LD832 X(S) 4- MEG, a MEG x 32 DRAM MODULE DRAM • a ^ i l l 4 MEG, 8 MEG x 32 ^ 16, 32 MEGABYTE, 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH IVIUUULt FEATURES • New proposed JEDEC-standard pinout in a 72-pin
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MTSLD432X
MT16LD832
72-pin
200mW
048-cycle
128ms
maxiMT16U5832
MT8LD432
72-Pin
MT16C
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4LD T 164A (X), MT8LD264A (X), T16LD464A (X) 1, 2, 4 MEG X 64 DRAM MODULES MICRON I TECHNOLOGY. INC. 1, 2, 4 MEG DRAM MODULE 8, 16, 32 MEGABYTE, NONBUFFERED, 3.3V, EDO OR FAST PAGE MODE FEATURES • • • • • • • • • • X 64 PIN ASSIGNMENT (Front View)
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MT8LD264A
MT16LD464A
168-Pin
168-pin,
024-cycle
048-cycle
DE-12
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Untitled
Abstract: No abstract text available
Text: OBSOLETE MICRON I 1>2’ 4 M E Gx64 NONBUFFERED DRAM DIMMs TECHNOLOGY, INC. DRAM MT4LDT164A X , MT8LD264A(X), T16LD464A(X) V n M IV l IVI II ^ or the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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MT4LDT164A
MT8LD264A
MT16LD464A
168-pin,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY l^ iic n a N 4 MEG X T16LD464 X 64 DRAM MODULE DRAM 4 MEG x 64 M O n i l l F IV IV U U U b 32 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM) • High-performance CMOS silicon-gate process
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MT16LD464
168-pin,
88QmW
048-cycle
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M M Q N T16LD T 164(S), T16LD(T)464(X)(S) 1 MEG, 4 MEG X 64 DRAM MODULES I DRAM |y | 0 Q 18, 32MEG’ 4 MEG x 64 MEGABYTE, 3.3V, OPTIONAL SELF L £ REFF^ESH, FAST PAGE OR EDO PAGE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC- and industry-standard pinout in a 168-pin,
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MT16LD
168-Pin
168-pin,
024-cycle
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Untitled
Abstract: No abstract text available
Text: M I I C R O N 1’ 2 ’ 4 M E G x 64 NONBUFFERED DRAM DIMMs TECHNOLOGY, INC. DRAM MODULE MT4LD T 164A(X) MT8LD264A(X) T16LD464A(X) FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JED EC pin-out in a 168-pin, dual in-line m em ory m odule (DIMM) • 8M B (1 M eg x 64), 16M B (2 M eg x 64),
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MT8LD264A
MT16LD464A
168-Pin
168-pin,
024-cycle
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT8LD132 X S , T16LD232X(S) 1 MEG, Z MEG X 32 DRAM MODULE 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • New proposed JED EC-standard pinout in a 72-pin single-in-line package • High-performance CM O S silicon-gate process
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MT8LD132
MT16LD232X
72-pin
800mW
024-cycle
128ms
72-Pin
G011474
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tc 97101
Abstract: No abstract text available
Text: ADVANCE MICRON I rtCHNCLOG * INC M714LD T 164 B(N), MT8LD264 B(N), T16LD464 B(N) 1 , 2 , 4 MEG X 64 BURST EDO DRAM MODULES BURST EDO DRAM MODULE 1, 2, 4 MEG X 64 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES • 168-pin, dual-in-line m em ory m od u e (DIM M )
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M714LD
MT8LD264
MT16LD464
168-pin,
024-cycle
048-cycle
168-Pin
1125I
tc 97101
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