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    MRF6VP121KH Search Results

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    MRF6VP121KH Price and Stock

    NXP Semiconductors MRF6VP121KHR6

    RF MOSFET LDMOS 50V NI1230
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    DigiKey MRF6VP121KHR6 Reel
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    Rochester Electronics LLC MRF6VP121KHR5

    RF MOSFET LDMOS 50V NI1230
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    DigiKey MRF6VP121KHR5 Bulk 1
    • 1 $646.68
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    NXP Semiconductors MRF6VP121KHR5

    RF MOSFET LDMOS 50V NI1230
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    DigiKey MRF6VP121KHR5 Reel 50
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    Avnet Americas MRF6VP121KHR5 Reel 10 Weeks 50
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    Mouser Electronics MRF6VP121KHR5
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    Newark MRF6VP121KHR5 Reel 50
    • 1 $559.63
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    Rochester Electronics MRF6VP121KHR5 61 1
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    Richardson RFPD MRF6VP121KHR5 50
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    Avnet Silica MRF6VP121KHR5 12 Weeks 50
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    EBV Elektronik MRF6VP121KHR5 12 Weeks 50
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    NXP Semiconductors MRF6VP121KHSR5

    RF MOSFET LDMOS 50V NI1230
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    DigiKey MRF6VP121KHSR5 Reel
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    Rochester Electronics LLC MRF6VP121KHR5-FR

    RF MOSFET LDMOS 50V NI1230
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    DigiKey MRF6VP121KHR5-FR Bulk 1
    • 1 $646.68
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    MRF6VP121KH Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF6VP121KHR6 Freescale Semiconductor VHV6 1KW 50V NI1230H Original PDF
    MRF6VP121KHSR6 Freescale Semiconductor VHV6 1KW 50V NI1230HS Original PDF

    MRF6VP121KH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    250GX-0300-55-22

    Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 Arlon AN1955 MRF6VP121KHSR6 PDF

    ATC100B1R0CT500XT

    Abstract: Variable Gain Amplifiers freescale MRF6VP121KHR6 LDMOS push pull
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 0, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 ATC100B1R0CT500XT Variable Gain Amplifiers freescale LDMOS push pull PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 PDF

    Tantalum Capacitor kemet

    Abstract: HSR6 CRCW12061K00FKEA 1030 mhz 3A412 MRF6VP121KHR6 MRF6VP121KHSR6 A114 A115 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 1, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 Tantalum Capacitor kemet HSR6 CRCW12061K00FKEA 1030 mhz 3A412 MRF6VP121KHSR6 A114 A115 C101 PDF

    250GX-0300-55-22

    Abstract: MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114 MRF6VP121KHR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 2, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114 PDF

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


    Original     		PDF

    800w rf power amplifier circuit diagram

    Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
    Text: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in


    Original     		1990s. 2010are 50VRFLDMOSWP 800w rf power amplifier circuit diagram MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics PDF