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Kyocera AVX Components 100B1R0CT500XT Silicon RF Capacitors / Thin Film 500volts 1pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	100B1R0CT500XT	Reel			500	1 - 10 - 100 - 1000 $2.28 10000 $2.28	Buy Now

ATC100B1R0CT500X Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
250GX-0300-55-22 Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed	Original	PDF	MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 Arlon AN1955 MRF6VP121KHSR6
ATC100B1R0CT500XT Abstract: Variable Gain Amplifiers freescale MRF6VP121KHR6 LDMOS push pull Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 0, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed	Original	PDF	MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 ATC100B1R0CT500XT Variable Gain Amplifiers freescale LDMOS push pull
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed	Original	PDF	MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6
Tantalum Capacitor kemet Abstract: HSR6 CRCW12061K00FKEA 1030 mhz 3A412 MRF6VP121KHR6 MRF6VP121KHSR6 A114 A115 C101 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 1, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed	Original	PDF	MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 Tantalum Capacitor kemet HSR6 CRCW12061K00FKEA 1030 mhz 3A412 MRF6VP121KHSR6 A114 A115 C101
250GX-0300-55-22 Abstract: MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114 MRF6VP121KHR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 2, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed	Original	PDF	MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1007H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1007HR5 MMRF1007HSR5 RF power transistors designed for applications operating at frequencies	Original	PDF	MMRF1007H MMRF1007HR5 MMRF1007HSR5 MMRF1007HR5