TERMOPAR tipo j
Abstract: tiristor potencia tiristor scr CATALOGO DE TRANSISTORES potenciometro 10k tiristor SCR alta potencia reles ESTADO solido tiristor 7,5 A 220 V datasheet potenciometro b 10k TRANSFORMADORES
Text: ESPECIALÍSTA MUNDIAL NA TECNOLOGIA DE RELÉS DE ESTADO SÓLIDO Montagem em PCB Montagem em Painéis Montagem em Trilho DIN Relés de Controle de Estado Sólido Módulos I/O C rydom é sinônimo de
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k1206
Abstract: RF Transistor 1500 MHZ
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. Rated output power is 135 watts. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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K1206
G-200,
1-877-GOLDMOS
1301-PTF
RF Transistor 1500 MHZ
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5N90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N90 Preliminary Power MOSFET 5A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 5N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum
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O-220
O-220F
QW-R502-499
5N90
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET 8 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state
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QW-R502-470
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N90 Power MOSFET 5A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum
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5N90Lat
QW-R502-499
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N90 Power MOSFET 5A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum
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5N90Lat
QW-R502-499
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8n90
Abstract: 8n90l
Text: UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET 8A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220
QW-R502-470
8n90
8n90l
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 8N90 Preliminary Power MOSFET 8A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state
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8N90L-TA3-T
QW-R502-470
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5n90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N90 Preliminary Power MOSFET 5A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum
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O-220
O-220F
QW-R502-499
5n90
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N90 Preliminary Power MOSFET 5 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 5N90 is a N-channel mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum
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O-220
O-220F
QW-R502-499
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Untitled
Abstract: No abstract text available
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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FJAFS1510A
FJAFS1510A
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TEA1507P
Abstract: TOP225Y MC44603P smd DAL TDA4605-3 stm cl 140 UC3842B 75155N 12v 60w smps MAX713CPE
Text: eratum.qxd 26/2/04 2:49 pm Page 1 Semiconductors - Power Supply & Control Switching Regulators Fixed Negative & Positive Type Manuf Package IOUT SW VOUT VIN (A)Max (V)Typ (V)Min-Max S/down SMT Features LT1300CN8 LT DIP8 0•62 3·3/5 1·8-8 N LM2597HVN-3·3
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LT1300CN8
LM2597HVN-3
LM2675N-3
LT1507CS8-3
LM2575T-3
O220-5
L4973V3
DIP18
REG710NA3
OT23-6
TEA1507P
TOP225Y
MC44603P
smd DAL
TDA4605-3
stm cl 140
UC3842B
75155N
12v 60w smps
MAX713CPE
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smd code marking NEC
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part
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G18756EU3V0SG00
smd code marking NEC
TRANSISTOR SMD CODE PACKAGE SOT89 52 10A
38w smd transistor
smd mark code 38w
SMD 8PIN IC MARKING CODE 251
marking code E1 SMD 5pin
6pin dip SMD mosfet MARKING code T
mosfet SMD CODE PACKAGE SOT89 52 10A
marking code E2 p SMD Transistor
TRANSISTOR SMD MARKING CODE MP
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DVD CD 5888
Abstract: dvd D 5888 s 1550nm Laser Diode with butterfly pin package NX8346 PS9553 PS9317 PS9301 MAN light EDFA dwdm tosa TOSA ROsa
Text: Opto-Electronics Devices Opto-Electronics Devices Home Page http://www.necel.com/opto/ Opto-Electronics Devices, Supporting the Global Information Network Since the dawn of time man has been fascinated by the nature of light. Only recently has he discovered light’s ability to transmit vast quantities of information.
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G0706
PX10160EJ11V0PF
DVD CD 5888
dvd D 5888 s
1550nm Laser Diode with butterfly pin package
NX8346
PS9553
PS9317
PS9301
MAN light EDFA
dwdm tosa
TOSA ROsa
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Untitled
Abstract: No abstract text available
Text: IRFS440 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 6 .2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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IRFS440
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Untitled
Abstract: No abstract text available
Text: IRFS440A Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 6 .2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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IRFS440A
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SEC IRF 640
Abstract: No abstract text available
Text: IRF840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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IRF840A
SEC IRF 640
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sec irf840
Abstract: IRF840 MOSFET SEC IRF 640
Text: IRF840 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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IRF840
sec irf840
IRF840 MOSFET
SEC IRF 640
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SEC IRF 640
Abstract: No abstract text available
Text: IRFW/I840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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IRFW/I840A
SEC IRF 640
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1301P
Abstract: K1206 ldmos
Text: ERICSSON PTE 10125* 135 Watts, 1.4-1.6 GHz LDMOS Field Effect Transistor Description The 10125 is an internally m atched, comm on source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DAR. Rated output
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K1206
G-200,
-877-GOLD
1301-PTE
1301P
ldmos
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1216 mosfet siemens
Abstract: transistor D 1666
Text: ERICSSON í PTE 10012* 12 Watts, H F - 1 . 5 GHz L D M O S Field Effect Transistor Description The 10012 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 12 w a tts m inim um o utput pow er. N itride surface
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Untitled
Abstract: No abstract text available
Text: Advanced IRFS840A Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A M a x. @ V DS = 500V ■ Lower RDS(ON) ^D S (o n ) = 0 . 8 5 Q.
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IRFS840A
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Transistor AC 51 0865 75 834
Abstract: ATC 1084 fe 5571 AC 51 0865 Transistor AC 51 0865 75 730 ic atc 1084 PTE 10011 Ericsson
Text: E R IC SSO N í PTE 10011* 6 Watts, H F - 1 . 5 GHz L D M O S Field Effect Transistor Description The 10011 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
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P4917-ND
P5276
GI-200
Transistor AC 51 0865 75 834
ATC 1084
fe 5571
AC 51 0865
Transistor AC 51 0865 75 730
ic atc 1084
PTE 10011 Ericsson
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1RF250
Abstract: IRF250 motorola MOSFET IRF250 transistor irf250 irf 250 MOSFET IRF 635 SSR -25 DD
Text: MOTOROLA SC X S T R S /R 14E D I F b 3 ti7 E 5 4 QDÔTbLi fc, | MOTOROLA •a SEM ICONDUCTOR TECHNICAL DATA IRF250 IRF251 IRF252 IRF253 Pow er Field E ffect Transìstor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for low
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IRF250
IRF251
IRF252
IRF253
IRF250,
IRF252,
IRF253
1RF250
IRF250 motorola
MOSFET IRF250
transistor irf250
irf 250
MOSFET IRF 635
SSR -25 DD
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