IRFS440B
Abstract: No abstract text available
Text: IRFS440B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
|
Original
|
PDF
|
IRFS440B
IRFS440B
|
IRFS440A
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFS440A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.85Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 6.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V
|
Original
|
PDF
|
IRFS440A
IRFS440A
|
IRFS440B
Abstract: No abstract text available
Text: IRFS440B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
|
Original
|
PDF
|
IRFS440B
IRFS440B
|
IRFS440
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFS440 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.85Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 6.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V
|
Original
|
PDF
|
IRFS440
IRFS440
|
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
|
Original
|
PDF
|
|
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
|
Original
|
PDF
|
SC70-6
SC75-6
SuperSOTTM-3/SOT-23
Power247TM,
FLMP SuperSOT-6
Complementary MOSFETs buz11
FQD7P20
FDG6316
IRF650
FQP65N06
IRFS630
FDG329N
FDP2532
fqpf6n80
|
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM
|
Original
|
PDF
|
UF4003.
UF4004.
UF4005.
UF4006.
UF4007.
USB10H.
USB1T1102
USB1T11A.
vKA75420M
W005G
FQPF*7N65C APPLICATIONS
bc548 spice model
bf494 spice model
spice model bf199
LM3171
BC517 spice model
bc547 spice model
BF494 spice
MOC3043-M spice model
SPICE model BC237
|
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
|
Original
|
PDF
|
5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
|
fqaf40n25
Abstract: fqaf19n20l FQAF44N08 FQAF44N10 FQAF55N10 FQAF58N08 FQAF65N06 FQAF70N08 FQAF70N10 FQAF85N06
Text: Discrete MOSFETs TO-3PF RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3PF N-Channel FQAF85N06 60 Single 0.01 - - - 86 67 100 FQAF65N06 60 Single 0.016 - - - 48 49 86
|
Original
|
PDF
|
FQAF85N06
FQAF65N06
FQAF90N08
FQAF70N08
FQAF58N08
FQAF44N08
SSF70N10A
FQAF70N10
FQAF12P20
SFF9240
fqaf40n25
fqaf19n20l
FQAF44N08
FQAF44N10
FQAF55N10
FQAF58N08
FQAF65N06
FQAF70N08
FQAF70N10
FQAF85N06
|
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
|
Original
|
PDF
|
2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
|
sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high
|
Original
|
PDF
|
IRF830A
IRF830B
Power247TM,
sss4n60a
IRFS634A
IRFS630A
SSP4N60A
irf640b
SSS7N60A
IRFU210A
SSP7N60A
IRF634B
IRF840A china
|
Untitled
Abstract: No abstract text available
Text: IRFS440A Advanced Power MOSFET FEATURES - 500 V ^D S on = 0.85Q B^DSS ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CM CD Q ♦ Improved Gate Charge II ♦ Lower Input Capacitance A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ VDS = 500V
|
OCR Scan
|
PDF
|
IRFS440A
|
Untitled
Abstract: No abstract text available
Text: IRFS440A Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 6 .2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
|
OCR Scan
|
PDF
|
IRFS440A
|
IRF MOSFET driver
Abstract: IRF 250V 100A IRFS440A IRF n 30v IRF 100A 500V
Text: IRFS440A A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance _Q CM CD ^ D S o n = II ♦ Rugged Gate Oxide Technology 0 .8 5 a A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V
|
OCR Scan
|
PDF
|
IRFS440A
IRF MOSFET driver
IRF 250V 100A
IRFS440A
IRF n 30v
IRF 100A 500V
|
|
|
Untitled
Abstract: No abstract text available
Text: IRFS440A Advanced Power MOSEET FEATURES B V DSS - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 6.2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V
|
OCR Scan
|
PDF
|
IRFS440A
|
Untitled
Abstract: No abstract text available
Text: IRFS440 Advanced Power MOSFET FEATURES - 500 V ^D S on = 0.85Q B^DSS ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CM CD Q ♦ Improved Gate Charge II ♦ Lower Input Capacitance A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ VDS = 500V
|
OCR Scan
|
PDF
|
IRFS440
|
Untitled
Abstract: No abstract text available
Text: IRFS440 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 6 .2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
|
OCR Scan
|
PDF
|
IRFS440
|
IRF 250V 100A
Abstract: IRFS440
Text: IRFS440 A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance _Q CM CD ^ D S o n = II ♦ Rugged Gate Oxide Technology 0 .8 5 a A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V
|
OCR Scan
|
PDF
|
IRFS440
IRF 250V 100A
IRFS440
|
l62a
Abstract: No abstract text available
Text: IRFS440A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max @ VDS= 500V
|
OCR Scan
|
PDF
|
IRFS440A
IRFS44
l62a
|
Untitled
Abstract: No abstract text available
Text: Advanced IRFS440A P o w e r MOSFEJT FEATURES B V Ds s • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |iA M a x . @ V DS = 500V
|
OCR Scan
|
PDF
|
IRFS440A
IRFW/I840A
|
mosfet 1026
Abstract: 1026 mosfet
Text: ERFS440A Advanced Power MOSFET FEATURES BVdss = 500 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VOS= 500V
|
OCR Scan
|
PDF
|
ERFS440A
IRFS440A
mosfet 1026
1026 mosfet
|
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040
|
OCR Scan
|
PDF
|
SSR3055A
IRFR014A
IRFR024A
IRFR034A
IRFR110A
IRFR120A
IRFR130A
IRFR210A
IRFR220A
IRFR230A
irf1740
IRL244
IRF1740A
ks 0550
IRL244A
IRFZ34A
SSH6N80A
IRF634A
irfs750
IRFS640
|
b 772 p
Abstract: No abstract text available
Text: MOSFETs FUNCTION GUIDE TO-3P FULL P ACK A G E N -CH A N N EL BVos$ V lo(on)(A) Ros(on)(Q) R0jc(K/W) Po(Watt) Page IRFS141 IRFS151 60 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS140 IRFS150 100 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS241
|
OCR Scan
|
PDF
|
IRFS141
IRFS151
IRFS140
IRFS150
IRFS241
1RFS251
IRFS240
IRFS250
IRFS341
IRFS351
b 772 p
|
IRFS432
Abstract: IRFS130
Text: FUNCTION GUIDE POWER MOSFETs TO-3P FULL PACKAGE NCHANNEL BVdss V IIXonXA) RDS(onXO) 80.00 8.30 9.70 17.30 19.40 23.50 27.50 0.230 0.160 0.100 0.077 0.080 0.055 IRFS133 IRFS131 IRFS143 IRFS141 IRFS153 IRFS151 100.00 8.30 9.70 17.30 19.40 23.50 27.70 0.230
|
OCR Scan
|
PDF
|
IRFS133
IRFS131
IRFS143
IRFS141
IRFS153
IRFS151
IRFS132
IRFS130
IRFS142
IRFS140
IRFS432
|
