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    Brady Worldwide Inc 7130-1-PK

    B946 7130-1 BK/YW STY-1 EACH
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    Panasonic Electronic Components ERA-2HRC1301P

    RES SMD 0.25% 1/16W 0402
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    NorComp 2163-13-01-P2

    CONN HEADER VERT 13POS 2MM
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    JRH Electronics 440HC069MT1301-P

    CONNECTOR BACKSHELL
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    JRH Electronics 440HC069NF1301-P

    CONNECTOR BACKSHELL
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    1301P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9434

    Abstract: transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
    Text: e PTB 20074 14 watts, 1.477–1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB 9434 transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts

    PTB 20245

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
    Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is


    Original     		PDF G-200 1-877-GOLDMOS 1301-PTB PTB 20245 RF NPN POWER TRANSISTOR C 10-12 GHZ

    capacitor siemens 4700 35

    Abstract: No abstract text available
    Text: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of


    Original     		PDF 1-877-GOLDMOS 1301-PTF10122 capacitor siemens 4700 35

    resistor qbk

    Abstract: No abstract text available
    Text: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11


    Original     		PDF 1-877-GOLDMOS 1301-PTF10122 resistor qbk

    transistor rf m 9837

    Abstract: No abstract text available
    Text: e PTF 10114 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 12 watts power output. Nitride surface


    Original     		PDF G-200, 1-877-GOLDMOS 1301-PTF transistor rf m 9837

    e20231

    Abstract: 20231 transistor E101
    Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power


    Original     		PDF G-200, 1-877-GOLDMOS 1301-PTE e20231 20231 transistor E101

    RF NPN POWER TRANSISTOR 3 GHZ 200 watts

    Abstract: No abstract text available
    Text: e PTB 20175 55 Watts, 1.9–2.0 GHz Cellular Radio RF Power Transistor Description The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55 watts minimum output power and may be used for both CW and PEP


    Original     		PDF ATC-100 G-200 1-877-GOLDMOS 1301-PTB RF NPN POWER TRANSISTOR 3 GHZ 200 watts

    ericsson 10159

    Abstract: PTF10159 470-860 mhz Power amplifier w
    Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power


    Original     		PDF UT-85-25 1-877-GOLDMOS 1301-PTF ericsson 10159 PTF10159 470-860 mhz Power amplifier w

    Untitled

    Abstract: No abstract text available
    Text: PRE-RELEASE PTF 10041* 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 12 watts power output. Nitride surface passivation


    Original     		PDF 1-877-GOLDMOS 1301-PTF

    20191 ic

    Abstract: No abstract text available
    Text: e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.


    Original     		PDF 1-877-GOLDMOS 1301-PTB 20191 ic

    PTB 20200

    Abstract: No abstract text available
    Text: e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier


    Original     		PDF 1-877-GOLDMOS 1301-PTB PTB 20200

    hit 215

    Abstract: No abstract text available
    Text: e E S A E L E R E PR HIT 1920-10 PTE 31042* 10 Watts, 1.9–2.0 GHz 50-Ohm Power Hybrid Description • The 1920-10 is a 50–ohm power hybrid intended for applications requiring linear power amplification in the PCS frequency range. The part is designed to operate with 50–ohm source and load impedances


    Original     		PDF 50-Ohm 1-877-GOLDMOS 1301-PTE hit 215

    K934

    Abstract: LZ9GG31 8c542 VXD1 switch K2961 ZENER3 UCB1300 lcd inverter board schematic MAX1692EUB VXD1
    Text: Intel StrongARM* SA-1110 Development Board Schematics May 2000 Phase 5 Order No: 278279-006 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no


    Original     		PDF SA-1110 21-ADV71-71 K-DD-54-25A99-01 54-25A99-01 K934 LZ9GG31 8c542 VXD1 switch K2961 ZENER3 UCB1300 lcd inverter board schematic MAX1692EUB VXD1

    P4917-ND

    Abstract: capacitor siemens 4700 35 G200
    Text: PTF 10015 50 Watts, 300–960 MHz GOLDMOS Field Effect Transistor Description Features The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full


    Original     		PDF P4917-ND P5276 1-877-GOLDMOS 1301-PTF P4917-ND capacitor siemens 4700 35 G200

    atc 17-33

    Abstract: transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733
    Text: PTF 10036 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure


    Original     		PDF 1-877-GOLDMOS 1301-PTF atc 17-33 transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733

    10125

    Abstract: G200 K1206 rf mosfet ericsson
    Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated


    Original     		PDF K1206 1-877-GOLDMOS 1301-PTF 10125 G200 K1206 rf mosfet ericsson

    smt a1 transistor

    Abstract: A1234 G200 PTF 10021
    Text: PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is


    Original     		PDF 1-877-GOLDMOS 1301-PTF smt a1 transistor A1234 G200 PTF 10021

    TRANSISTOR 955 E

    Abstract: PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor
    Text: e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB TRANSISTOR 955 E PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor

    2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 10149
    Text: PTF 10149 70 Watts, 921–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10149 is an internally matched, 70 Watt LDMOS FET intended for cellular and GSM amplifier applications from 921–960 MHz. This device operates at 50% efficiency with 16 dB of gain. Nitride


    Original     		PDF 1-877-GOLDMOS 1301-PTF 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 10149

    G200

    Abstract: No abstract text available
    Text: PTF 10111 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure


    Original     		PDF 1-877-GOLDMOS 1301-PTF G200

    Untitled

    Abstract: No abstract text available
    Text: PTH 32003 25 Watts, 1.9–2.0 GHz 50-Ohm High-Gain Power Hybrid Description • The PTH 32003 is a high–gain 50–ohm power hybrid intended for applications requiring linear amplification and high gain in the PCS frequency range. The part is designed to operate with 50–ohm source


    Original     		PDF 50-Ohm 1-877-GOLDMOS 1301-PTH

    9434

    Abstract: PTB 20200 PTB 20171 transistor b 1166 transistor 9350
    Text: e PTB 20171 25 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB 9434 PTB 20200 PTB 20171 transistor b 1166 transistor 9350

    0930 IC

    Abstract: No abstract text available
    Text: PTB 20239 12 Watts, 1465–1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW


    Original     		PDF 1-877-GOLDMOS 1301-PTB 0930 IC

    JX - 638

    Abstract: 20190 UT85-25 UT-85-25 0280 212 010 microstrip
    Text: e PTB 20190 175 Watts, 470–806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically


    Original     		PDF G-200, 1-877-GOLDMOS 1301-PTB JX - 638 20190 UT85-25 UT-85-25 0280 212 010 microstrip