Untitled
Abstract: No abstract text available
Text: PTF 10043 GOLDMOS Field Effect Transistor 12 Watts, 1.9–2.0 GHz Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device
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P4917-ND
P5276
1-877-GOLDMOS
1522-PTF
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P4917-ND
Abstract: capacitor siemens 4700 35 G200
Text: PTF 10015 50 Watts, 300–960 MHz GOLDMOS Field Effect Transistor Description Features The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full
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P4917-ND
P5276
1-877-GOLDMOS
1301-PTF
P4917-ND
capacitor siemens 4700 35
G200
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capacitor siemens 4700 35
Abstract: G200 atcb
Text: PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10043 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts
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P4917-ND
P5276
1-877-GOLDMOS
1301-PTF
capacitor siemens 4700 35
G200
atcb
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TRIMMER capacitor 5-60 pF
Abstract: G200 CDS4010 gps 9725
Text: PTF 10052 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization
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5801-PC
P4917-ND
P5276
1-877-GOLDMOS
1301-PTF
TRIMMER capacitor 5-60 pF
G200
CDS4010
gps 9725
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PDF
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data transistor 1650
Abstract: G200
Text: PTF 10045 30 Watts, 1.60–1.65 GHz GOLDMOS Field Effect Transistor Description The PTF 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 watts power output. Nitride surface passivation
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Original
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P4917-ND
P5276
1-877-GOLDMOS
1301-PTF
data transistor 1650
G200
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G200
Abstract: No abstract text available
Text: PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device
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Original
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P4917-ND
P5276
1-877-GOLDMOS
1522-PTF
G200
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ERICSSON 10031
Abstract: G200
Text: PTF 10031 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure
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P4917-ND
P5276
1-877-GOLDMOS
1301-PTF
ERICSSON 10031
G200
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ERICSSON 10031
Abstract: G200
Text: GOLDMOS PTF 10031 Field Effect Transistor 50 Watts, 1.0 GHz Description The PTF 10031 is a 50–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 55% efficiency with 13 dB gain. Nitride surface passivation and full gold
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P4917-ND
P5276
1-877-GOLDMOS
1522-PTF
ERICSSON 10031
G200
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F 10007
Abstract: G200 10007
Text: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization
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P4917-ND
P5276
1-877-GOLDMOS
1522-PTF
F 10007
G200
10007
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G200
Abstract: 10007
Text: PTF 10007 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10007 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization
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Original
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P4917-ND
P5276
1-877-GOLDMOS
1301-PTF
G200
10007
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PDF
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Untitled
Abstract: No abstract text available
Text: PTF 10015 50 Watts, 300–960 MHz GOLDMOS Field Effect Transistor Description Features The PTF 10015 is a 50–watt GOLDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. This device operates at 55% efficiency with 13 dB gain. Nitride surface
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Original
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P4917-ND
P5276
1-877-GOLDMOS
1522-PTF
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G200
Abstract: 500 watts amplifier schematic diagram
Text: PTF 10045 GOLDMOS Field Effect Transistor 30 Watts, 1.60–1.65 GHz Description • The PTF 10045 is a GOLDMOS FET intended for large signal amplifier applications to 1.65 GHz. Rated at 30 watts power output, it operates at 43% efficiency with 11.5 dB gain. Nitride surface passivation and
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P4917-ND
P5276
1-877-GOLDMOS
1522-PTF
G200
500 watts amplifier schematic diagram
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IDG200
Abstract: No abstract text available
Text: ERICSSON $ PTE 10035* 30 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10035 is an internally matched common source n-channel en hancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum
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P4917-ND
P5276
5801-PC
IDG200
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PDF
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PTE10026
Abstract: No abstract text available
Text: E R IC SSO N í PTE 10026* 6 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
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Tota20/97
5801-PC
P4917-ND
P5276
5701-PC
PTE10026
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ERICSSON 10031
Abstract: PTF 10031 ericsson b
Text: ERICSSON ^ PTF 10031 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10031 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 45 watts minimum output power. Nitride surface passivation
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P4917-ND
P5276
ERICSSON 10031
PTF 10031
ericsson b
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10019
Abstract: P4917-ND
Text: ERICSSON ^ PTE 10019* 70 Watts, 860-960 MHz LDMOS Field Effect Transistor Description The 10019 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for cellular, GSM, and DAMP applications in the 860 to 960 MHz range. It is rated at 70 watts
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P5276
P4917-ND
20AWG,
10019
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10101* 60 Watts, 1.0 GHz LDMOS Field Effect Transistor Description Performance at 960 MHz, 28 Volts - Output Power = 60 Watts - Power Gain = 12.0 dB Typ - Efficiency = 55% Typ Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage
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P4917-ND
P5276
20AWG,
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PDF
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PTF10027
Abstract: ericsson 10027 f 0952
Text: ERICSSON $ PTF 10027 12 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 12 watts minimum output power. Nitride surface passivation
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OCR Scan
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IEC-68-2-54
Std-002-A
P4917-ND
P5276
5801-PC
20AWG,
PTF10027
ericsson 10027
f 0952
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PDF
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transistor 21789
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10109* 55 Watts, 470-860 MHz LDMOS Field Effect Transistor Description The 10109 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 860 MHz. It is rated at 55 watts minimum output power. Nitride surface passivation
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P4917-ND
P5276
transistor 21789
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transistor 21789
Abstract: ERICSSON 10031 PTF 10031
Text: ERICSSON í PTF 10031 45 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10031 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 45 w a tts m inim um o u tp u t power. N itride surface
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Opera10031
P4917-ND
P5276
transistor 21789
ERICSSON 10031
PTF 10031
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transistor 21789
Abstract: 0965 TRANSISTOR ATC 1595
Text: ERICSSON ^ PTE 10101 60 Watts, HF-1.0 GHz LDMOS Field Effect Transistor Description The 10101 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 60 w a tts m inim um o u tp u t power. N itride surface
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ic 0941
Abstract: ericsson 10027 10027 mosfet SIEMENS B 58 371 R/Atmel 0947
Text: E R IC SSO N í PTE 10027* 12 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 18 watts minimum output power. Nitride surface passivation
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P4917-ND
P5276
5801-PC
ic 0941
ericsson 10027
10027 mosfet
SIEMENS B 58 371
R/Atmel 0947
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PDF
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ATC 1084
Abstract: pte10011
Text: ERICSSON $ PTE 10011* 6 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10011 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
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OCR Scan
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IEC-68-2-54
Std-002-A
Po200
P4917-ND
P5276
G-200
ATC 1084
pte10011
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PDF
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PTF10026
Abstract: U016 10026 IEC-68-2-54
Text: ERICSSON ^ PTF 10026 6 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
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OCR Scan
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IEC-68-2-54
Std-002-A
P4917-ND
P5276
5701-PC
20AWG,
PTF10026
U016
10026
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