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    MOSFET IRFP 250 N Search Results

    MOSFET IRFP 250 N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRFP 250 N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet irfp 250 A

    Abstract: No abstract text available
    Text: Standard Power MOSFET IRFP 254 VDSS ID cont RDS(on) = 250 V = 23 A = 0.14 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 250 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 mosfet irfp 250 A

    IRFP 640

    Abstract: IRFP254
    Text: IRFP 254 Standard Power MOSFET VDSS = 250 V ID cont = 23 A RDS(on) = 0.14 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 IRFP 640 IRFP254

    IRFP 640

    Abstract: IRFP264 IRFP P CHANNEL
    Text: IRFP 264 Standard Power MOSFET VDSS = 250 V ID cont = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 IRFP 640 IRFP264 IRFP P CHANNEL

    MOSFET 11N80 Data sheet

    Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
    Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250


    Original     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640

    IRFP 640

    Abstract: IRFP P CHANNEL IRFP
    Text: IRFP 250 Standard Power MOSFET VDSS = 200 V ID cont = 30 A Ω RDS(on) = 85 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF

    N-channel MOSFET to-247

    Abstract: NS 106 IRFP 530
    Text: Standard Power MOSFET IRFP 250 VDSS ID cont RDS(on) = 200 V = 30 A Ω = 85 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM


    Original     		PDF O-247 N-channel MOSFET to-247 NS 106 IRFP 530

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original     		PDF 125OC 100ms Figure10.

    IRFP 640

    Abstract: IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460
    Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original     		PDF O-247 125OC 100ms Figure10. IRFP 640 IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460

    20nc50

    Abstract: IRFP 450 irfp
    Text: Standard Power MOSFET IRFP 450 VDSS ID cont RDS(on) = 500 V = 14 A = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 20nc50 IRFP 450 irfp

    IRFP 640

    Abstract: No abstract text available
    Text: Standard Power MOSFET IRFP 260 VDSS = 200 V ID cont = 46 A RDS(on) = 55 mW N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF O-247 IRFP 640

    mosfet irfp 250 N

    Abstract: IRFP 260 M w46a Irfp260 transistor irfp
    Text: Standard Power MOSFET IRFP 260 VDSS ID cont RDS(on) = 200 V = 46 A Ω = 55 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF

    IRFP 450 application

    Abstract: GD15-0 IRFP 640 20NC50 IRFP P CHANNEL transistor irfp IRFP 450
    Text: IRFP 450 Standard Power MOSFET VDSS = 500 V ID cont = 14 A RDS(on) = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF

    IRFP RE 40

    Abstract: irfp254b
    Text: IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRFP254B IRFP254B FP001 IRFP RE 40

    Untitled

    Abstract: No abstract text available
    Text: nixYS_ Standard Power MOSFET IRFP 254 VDSS = 250 V ^D cont = 23 A ^D S (o n) = ^ N-Channel Enhancement Mode ?D 8 Symbol Test Conditions Maximum Ratings V DSS Tj = 25°Cto150°C 250 V V DGR Tj = 25° C to 150° C; RGS= 1 MC2 250 V Vos Continuous


    OCR Scan     		PDF Cto150 O-247

    9D140

    Abstract: No abstract text available
    Text: IRFP 250 VDSS = 200 V ^D cont = 30 A Standard Power MOSFET R DS,on) = 85 m Q N-Channel Enhancement Mode Symbol Test Conditions V ¥ dss T j =25°C to150°C 200 V v T j = 25°Cto150°C; RGS= 1 Mi2 200 V < (/> >8 Continuous ¿20 V v Transient 130 V T c =25°C


    OCR Scan     		PDF to150 Cto150 O-247 9D140

    IXTN 36N50 C

    Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
    Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20


    OCR Scan     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS MegaMOS IRFP460 Power MOSFET V DSS = 500 V 20 A D cont D DS(on) N-Channel Enhancement Mode, HDM OS™ Family Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C 500 V v DGR Tj = 25°C to 150°C; RGS = 1 M£i 500 V VGS V GSM Continuous


    OCR Scan     		PDF IRFP460 O-247

    027Q

    Abstract: No abstract text available
    Text: DIXYS MegaMOS IRFP460 VDSS Power MOSFET D cont R DS(on) N-Channel Enhancement Mode, HDMOS™ Family Symbol Test Conditions V DSS T j =25°C to 150°C 500 V v DGR T j = 25° C to 150° C; RGS= 1 M£2 500 V Vos Continuous 120 V V GSM Transient ±30 V ^025


    OCR Scan     		PDF IRFP460 O-247 C2-32 C2-33 027Q

    IRFP 640

    Abstract: mosfet irfp 250 N
    Text: IXYS Standard Power MOSFET IRFP 450 VDSS ID cont P DS(on) 500 V 14 A 0.40 f t N-Channel Enhancement Mode Symbol Test Conditions v DSS Tj =25°Cto150°C 500 V vDGR ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V ^D25 Tc =25°C 14 A Tc = 25° C, pulse width limited by TJM


    OCR Scan     		PDF Cto150 O-247 00A/ns, pro45 IRFP 640 mosfet irfp 250 N

    1RFP9240

    Abstract: irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX
    Text: '"7964142 S A M S U N G SEM_ICONDUCTO ,> ." IRF9130/9131/9132/9133 T " IRFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 <*I b 4 1 4 d UUU54Ü5 _ ' P-CHANNEL Preliminary Specifications DE 1 7 ^ 4 1 4 2 - 1 0 0 Volt, 0.30 Ohm SFET PRODUCT SUMMARY 0D05405 ? Part Number


    OCR Scan     		PDF IRF9130/9131/9132/9133 IRFP9130/9131 IRF9530/9531Z9532/9533 UUU54DS 7Tti4145 IRF/IRFP9130, IRF9530 -100V IRF/IRFP9131, IRF9531 1RFP9240 irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX

    Untitled

    Abstract: No abstract text available
    Text: IRFP254 v DSS Standard Power MOSFET cont R DS(on) = 250 V = 23 A = 0.14 a N-Channel Enhancement Mode 9D Symbol Test Conditions V DSS Tj = 25 °C to 150°C 250 V V DGR T, = 25 °C to 150°C; RGS = 1 M£2 250 V v GS vGSM Continuous ±20 V Transient ±30 V


    OCR Scan     		PDF IRFP254 Q003flc

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient


    OCR Scan     		PDF IRFP250 O-247

    Untitled

    Abstract: No abstract text available
    Text: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM


    OCR Scan     		PDF IRFP450 O-247

    Untitled

    Abstract: No abstract text available
    Text: • 4302571 QDSmiD tSü ■ HAS E5J HARRIS IRFP15 0 /1 5 1 /1 5 2 /1 53 IRFP150R/151 R /152R/153R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-247 TOP VIEW • 3 4 A and 40 A , 6 0 V - 1 0 0V • rD S on = 0 .0 5 5 H an d 0 .0 8 0


    OCR Scan     		PDF IRFP15 IRFP150R/151 /152R/153R O-247 IRFP150, IRFP151, IRFP152, IRFP153 IRFP150R, IRFP151R,