TL555
Abstract: TL 555 KM44C256 KM44C258 IC 555 pin DIAGRAM samsung 256Kx4 static RAM
Text: SAMSUNG SEMICONDUCTOR INC Tfl DEj| 7Tti4145 0 0 0 5 5 0 7 Í XT ^^ 4 " 5 'Z 7 ,-t'l /r f V U -'Z . ' ' ' ' PRELIMINARY SPECIFICATION KM44C256/KM44C258 CMOS DRAM 256KX4 Bit CMOS Dynamic RAM FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256/8 Is a CMOS high speed
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7Tti4145
KM44C256/KM44C258
256KX4
KM44C256/8-10
KM44C256/8-12
100ns
120ns
190ns
220ns
KM44C256/8
TL555
TL 555
KM44C256
KM44C258
IC 555 pin DIAGRAM
samsung 256Kx4 static RAM
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Untitled
Abstract: No abstract text available
Text: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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DQ0-DQ15
00303bS
KM416C1200BT
Tb4142
KM416C1200BT)
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KS556D
Abstract: No abstract text available
Text: SAMSUNG SEM IC ON DUCT OR INC =16 DE | 7 ^ 4 1 4 2 KS556 0004571 T | i871„ , P C M O S INTEGRATED CIRCUIT C M O S TIMER The KS556 is monolithic integrated circuit fabricated using C-MOS process. Due to high impedance inputs Trigger, Threshold, Reset , itis capable of producing accurate time delay using less expensive,
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KS556
KS556
NE556.
KS556D
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IRF130
Abstract: irf131 142SA
Text: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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D0DS074
IRF130/131/132/133
IRF130
IRF131
IRF132
IRF133
00US435
F--13
142SA
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