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    MOSFET IRF9630 DATASHEET Search Results

    MOSFET IRF9630 DATASHEET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF9630 DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRF9630

    Abstract: SiHF9630 SiHF9630-E3
    Text: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9630, SiHF9630 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF9630 SiHF9630-E3

    IRF9630

    Abstract: RF1S9630 RF1S9630SM RF1S9630SM9A TB334
    Text: IRF9630, RF1S9630SM Data Sheet Title F96 1S9 0SM bt A, 0V, 00 m, 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified


    Original     		PDF IRF9630, RF1S9630SM TA17512. TB334 IRF9630 O-220AB O-263AB IRF9630 RF1S9630 RF1S9630SM RF1S9630SM9A TB334

    IRF9630

    Abstract: 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334
    Text: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of


    Original     		PDF IRF9630, RF1S9630SM TA17512. IRF9630 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: SFP9630 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : -10 µA (Max.) @ VDS = -200V


    Original     		PDF -200V SFP9630 O-220 O-220

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    0119 Solar Lamp Controller

    Abstract: transistor SMD W06 78 NXP Semiconductors 70150 TYN225 WH1602A Matsua microswitch 250V AC IRF9520 Samsung iskra BT 200 MOTOR FM 270R 74HC00M
    Text: 24 Electronic Components pp751-856:Layout 1 24/1/14 16:12 Page 751 Electronic Components CAPACITORS OPTOELECTRONICS Ceramic Capacitors Tantalum Capacitors Variable Capacitors 752 759 759 DISCRETE SEMICONDUCTORS Bridge Rectifier Diodes Diodes Transistors 766


    Original     		PDF pp751-856 127mm 525mm 1550kHz 280kHz 2000m) 100mm 0119 Solar Lamp Controller transistor SMD W06 78 NXP Semiconductors 70150 TYN225 WH1602A Matsua microswitch 250V AC IRF9520 Samsung iskra BT 200 MOTOR FM 270R 74HC00M

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF