"RF MOSFETs"
Abstract: "RF MOSFET" 731 MOSFET IXZ308N120 mosfet 440 mhz MOSFET RF POWER
Text: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast
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IXZ308N120
175MHz
IXZ308N120
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"RF MOSFETs"
"RF MOSFET"
731 MOSFET
mosfet 440 mhz
MOSFET RF POWER
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Untitled
Abstract: No abstract text available
Text: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast
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IXZ308N120
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mosfet 4702
Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts
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IXZ210N50L
IXZ2210N50L
175MHz
IXZ210N50L
175MHz
mosfet 4702
72728
IXZ2210N50L
24016 AN
78259
78442
TL 4941
69106
j934
mosfet 4942
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G60N
Abstract: SS31 DIODE DS22062 pspice model TC4423A Tc4421 spice model TC1412 Latch-Up Protection for MOSFET Drivers 439M AN1327 TC1411
Text: AN1327 Avoiding MOSFET Driver Overstress Author: Ray DiSilvestro Microchip Technology Inc. INTRODUCTION This application note describes how to avoid MOSFET driver overstress. MOSFET drivers are used in many applications to drive the high input capacitance of a
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AN1327
dri18
DS01327A-page
G60N
SS31 DIODE
DS22062
pspice model TC4423A
Tc4421 spice model
TC1412
Latch-Up Protection for MOSFET Drivers
439M
AN1327
TC1411
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rf power mosfet
Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
Text: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings
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IXZ215N12L
175MHz
rf power mosfet
mosfet class ab rf
IXZ215N12L
"RF MOSFET" 300W
200W vhf
300w mosfet
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"RF MOSFET" 300W
Abstract: transistor tl 187 "RF MOSFETs" RF POWER MOSFET IXZ1210N50L 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf
Text: IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V operating
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IXZ12210N50L
175MHz
175MHz
IXZ1210N50L
dsIXZ12210N50L
"RF MOSFET" 300W
transistor tl 187
"RF MOSFETs"
RF POWER MOSFET
200W vhf
"RF MOSFET"
class d 200w
IXZ12210N50L
mosfet class ab rf
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mosfet 4702
Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
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IXZ210N50L
IXZ2210N50L
175MHz
175MHz
IXZ210N50L
dsIXZ210N50L
mosfet 4702
IXZ2210N50L
S 8050 d 331 transistor
dv 7812
9974 mosfet
9540 mosfet
78724
78105
MJ 7364
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IXZ2210N50L
Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
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IXZ210N50L
IXZ2210N50L
175MHz
175MHz
IXZ210N50L
dsIXZ210N50L
IXZ2210N50L
"RF MOSFET" 300W
mosfet 4702
9540 mosfet
IXYS RF
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Untitled
Abstract: No abstract text available
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
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20V P-Channel Power MOSFET
Abstract: US6M2
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
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"RF MOSFET" 300W
Abstract: IXZH16N60 1 RF s 640 a 931 IXZ316N60 MOSFET QG mosfet 300w rf power mosfet
Text: IXZH16N60 Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Qg and Rg Low Capacitance Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for ClassSwitching C, D, & E Applications Symbol
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IXZH16N60
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"RF MOSFET" 300W
IXZH16N60
1 RF s 640 a 931
MOSFET QG
mosfet 300w
rf power mosfet
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
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US6M11
R0039A
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
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US6M11
R0039A
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Untitled
Abstract: No abstract text available
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
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QS6M4
Abstract: No abstract text available
Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
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EM6M1
Abstract: MOSFET IGSS 100A
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
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1 RF s 640 a 931
Abstract: "RF MOSFETs" transistor tl 187 IXYS IXZ316N60 mosfet 50V
Text: IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Low Capacitance Qg and Rg Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for Class Switching C, D, & E Applications
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IXZR16N60
IXZR16N60A/B
IXZ316N60
dsIXZR16N60
1 RF s 640 a 931
"RF MOSFETs"
transistor tl 187
IXYS
mosfet 50V
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IXZ316N60
Abstract: mosfet 50V
Text: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V
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IXZ316N60
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mosfet 50V
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Untitled
Abstract: No abstract text available
Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Description Fast Switching Speed This MOSFET has been designed to minimize the on-state
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2N7002A
200mA
AEC-Q101
DS31360
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IXZ308N120
Abstract: ixzh ixzh08n120
Text: IXZH08N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200
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IXZH08N120
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ixzh
ixzh08n120
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ixzr08n120a
Abstract: No abstract text available
Text: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 1200 V ID25 = 8.0 A Symbol Test Conditions RDS on
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IXZR08N120
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ixzr08n120a
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IXZ318N50
Abstract: No abstract text available
Text: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V
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IXZ318N50
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"RF MOSFETs"
Abstract: 1 RF s 640 a 931 "RF MOSFET" transistor tl 187 IXZ308N120 ixzr08n120a IXYS RF IXZR08N120 5-486 731 MOSFET
Text: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXZR08N120
IXZR08N120A/B
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dsIXZR08N120
"RF MOSFETs"
1 RF s 640 a 931
"RF MOSFET"
transistor tl 187
ixzr08n120a
IXYS RF
IXZR08N120
5-486
731 MOSFET
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ixzr18n50
Abstract: No abstract text available
Text: IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on
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