mosfet 1200V
Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
mosfet 1200V
cmf20120
SiC MOSFET
Cree SiC MOSFET
DMOSFET
IXDI414
DMOS SiC
JEDEC24
RB160M-60
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CMF20120D
Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode
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CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
JEDEC24
mosfet 1200V
RB160M
6N137
IXDI414
RB160M-60
DMOS SiC
electronic transformer halogen 12v
MOSFET 800V 10A
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FDZ208P
Abstract: No abstract text available
Text: FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET
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FDZ208P
42opment.
FDZ208P
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Untitled
Abstract: No abstract text available
Text: FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET
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FDZ208P
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25N80C
Abstract: No abstract text available
Text: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions
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25N80C
ISOPLUS220
E72873
25N80C
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DSA003710
Abstract: No abstract text available
Text: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Conditions
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70N60C5
O-247
20070625a
DSA003710
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Untitled
Abstract: No abstract text available
Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS
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30N60C5
O-247
20070625a
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Untitled
Abstract: No abstract text available
Text: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Conditions
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70N60C5
O-247
20070625a
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DSA003710
Abstract: No abstract text available
Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS
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30N60C5
O-247
20070625a
DSA003710
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47N60C
Abstract: No abstract text available
Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G fl D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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47N60C
O-247
E72873
ID100
20080523a
47N60C
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IGBT GS
Abstract: No abstract text available
Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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30N60C5
O-247
20090209d
IGBT GS
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Untitled
Abstract: No abstract text available
Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D fl D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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35N60C5
O-247
20090209c
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Untitled
Abstract: No abstract text available
Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D fl D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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30N60C5
O-247
20090209d
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Untitled
Abstract: No abstract text available
Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C
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35N60C5
O-247
20070625a
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IXKH35N60C5
Abstract: No abstract text available
Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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35N60C5
O-247
20090209c
IXKH35N60C5
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DSA003710
Abstract: No abstract text available
Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C
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35N60C5
O-247
20070625a
DSA003710
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Untitled
Abstract: No abstract text available
Text: IXKH 30N60C5 COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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30N60C5
O-247
20080310b
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Untitled
Abstract: No abstract text available
Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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30N60C5
O-247
20080523c
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Untitled
Abstract: No abstract text available
Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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35N60C5
O-247
20080310b
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47N60C
Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100
Text: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
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47N60C
O-247
E72873
ID100
20080523a
47N60C
47n60
power mosfet 350v 30a to 247
UPS SIEMENS
E72873
ID100
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70N60C5
Abstract: 70n60 IXKH70N60C5
Text: IXKH 70N60C5 CoolMOS 1 Power MOSFET ID25 = 70 A VDSS = 600 V RDS on) max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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70N60C5
O-247
20090209d
70N60C5
70n60
IXKH70N60C5
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FIL-3C
Abstract: to-92 mosfet 13T13
Text: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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T0257AB
SM8F13*
SM8F33*
SM8F23*
SM8F43*
T0258AA
FT0258AA
HDS100
FIL-3C
to-92 mosfet 13T13
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Untitled
Abstract: No abstract text available
Text: SENTECH C OR P SflE » • filBS lBS POWER MOSFET’s IN HERMETIC 12 PIN ISOLATED PACKAGE □ D 0 2 cm SM4F151S* SM4F351S* 341 SM4F251S* SM4F451S* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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SM4F151S*
SM4F351S*
SM4F251S*
SM4F451S*
T0254AA
T0258AA
FT0258AA
HDS100
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Untitled
Abstract: No abstract text available
Text: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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SM6F151*
SM6F251*
SM6F351*
SM6F451*
T0254AA
T0258AA
FT0258AA
HDS100
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