1NK60Z
Abstract: STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode
Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω
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STD1LNK60Z-1
STQ1NK60ZR
STN1NK60Z
OT-223
STQ1NK60ZR
1NK60Z
STN1NK60Z
1Nk60
JESD97
STD1LNK60Z-1
STQ1NK60ZR-AP
mosfet 600V 100A ST
std1lnk60z
Marking STMicroelectronics zener diode
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Untitled
Abstract: No abstract text available
Text: N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description Features The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 600V ID = 0.4A RDS ON ≤ 8.5Ω
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MDZ1N60
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JESD97
Abstract: STD1LNK60Z-1 STN1NK60Z STQ1NK60ZR-AP
Text: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω
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STD1LNK60Z-1
STQ1NK60ZR-AP
STN1NK60Z
O-251
OT-223
STQ1NK60ZR-AP
JESD97
STD1LNK60Z-1
STN1NK60Z
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1Nk60
Abstract: 1NK60Z STQ1NK60ZR-AP 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z
Text: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω
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STD1LNK60Z-1
STQ1NK60ZR-AP
STN1NK60Z
O-251
OT-223
STQ1NK60ZR-AP
1Nk60
1NK60Z
1nk60zr
JESD97
STD1LNK60Z-1
STN1NK60Z
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smps 5v 0.3A
Abstract: N-Channel 600V MOSFET AF01N60C low vgs mosfet to-92
Text: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical
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AF01N60C
AF01N60C
-55oC
150oC
smps 5v 0.3A
N-Channel 600V MOSFET
low vgs mosfet to-92
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MOSFET 4600
Abstract: smps 5v 0.3A 4600 mosfet inverter
Text: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical
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AF01N60C
AF01N60C
-55oC
150oC
MOSFET 4600
smps 5v 0.3A
4600 mosfet inverter
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical
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AF01N60C
-55oC
150oC
AF01N60C
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F2HNK60Z
Abstract: D2HNK60Z RG 2006 10A 600V D2hnk of D2HNK60Z f2hnk60 ISD20A datasheet of D2HNK60Z d2hnk60 STD2HNK60Z-1
Text: STD2HNK60Z - STD2HNK60Z-1 STF2HNK60Z - STQ2HNK60ZR-AP N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID PTOT STD2HNK60Z 600V <4.8Ω 2A 45W STD2HNK60Z-1 600V <4.8Ω 2A 45W
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STD2HNK60Z
STD2HNK60Z-1
STF2HNK60Z
STQ2HNK60ZR-AP
O-92/TO-220FP/DPAK/IPAK
STD2HNK60Z
STF2HNK60Z
O-220
F2HNK60Z
D2HNK60Z
RG 2006 10A 600V
D2hnk
of D2HNK60Z
f2hnk60
ISD20A
datasheet of D2HNK60Z
d2hnk60
STD2HNK60Z-1
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FTN035N60
Abstract: No abstract text available
Text: FTN035N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 13.5 Ω 0.35A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：
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FTN035N60
FTN035N60
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BALLAST CFL
Abstract: FTN01N60
Text: FTN01N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 8.2 Ω 1.0A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：
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FTN01N60
BALLAST CFL
FTN01N60
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mosfet 600v 0.4a to-92
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL MOSFET 600V - 13 Ω - 0.8A General features Type L1N60A L1N60A VDSS RDS on ID Pw 600V <15Ω 0.3A 3W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ New high voltage benchmark
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L1N60A
L1N60A
mosfet 600v 0.4a to-92
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL 600V - 13Ω - 0.8A - TO-92 Zener-Protected SuperMESH Power MOSFET General features L1N60A Type VDSS RDS on ID Pw STQ1NK60ZR 600V <15Ω 0.3A 3W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized
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L1N60A
STQ1NK60ZR
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power mosfet 600v
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60P Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged
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1N60P
1N60P
QW-R502-634
power mosfet 600v
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
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1N60Z
1N60Z
QW-R502-724
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marking 724 diode sot-363
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
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1N60Z
1N60Z
QW-R502-724
marking 724 diode sot-363
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1n60
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
1n60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
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1N60B
Abstract: No abstract text available
Text: HY1N60B 600V / 1.0A 600V, RDS ON =12Ω@VGS=10V, ID=0.5A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger
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HY1N60B
2002/95/EC
MIL-STD-750
1N60B
125oC
-55oC
1N60B
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-052
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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1N60A
1N60A
QW-R502-091
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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1N60A
1N60A
QW-R502-091.
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UTC1N60
Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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OT-223
O-220
O-220F
O-251
O-252
QW-R502-052
UTC1N60
1N60L
1N60GA
1N60G
1N60 mosfet
to126 mosfet
mosfet 12A 600V
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N60K Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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2N60K
2N60K
QW-R502-819
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1n60ag
Abstract: 1N60A
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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1N60A
1N60A
QW-R502-091
1n60ag
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