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    1N60B Search Results

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    1N60B Price and Stock

    Central Semiconductor Corp 1N60-BK

    DIODE SCHOTTKY 100V 100MA DO7
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    Rochester Electronics LLC SSS1N60B

    N-CHANNEL POWER MOSFET
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    DigiKey SSS1N60B Bulk 2,049
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    Rochester Electronics LLC SSP1N60B

    N-CHANNEL POWER MOSFET
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    DigiKey SSP1N60B Bulk 1,902
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    Rochester Electronics LLC SSR1N60BTF

    N-CHANNEL POWER MOSFET
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    DigiKey SSR1N60BTF Bulk 1,158
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    Rochester Electronics LLC SSR1N60BTM

    MOSFET N-CH 600V 900MA DPAK
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    DigiKey SSR1N60BTM Bulk 1,567
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    1N60B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N60 mosfet

    Abstract: 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)


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    OT-223 O-220 QW-R502-052 1N60 mosfet 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    1N60A 1N60A QW-R502-091 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    QW-R502-052 PDF

    1N60B

    Abstract: No abstract text available
    Text: 1N60B 600V / 1.0A 600V, RDS ON =12Ω@VGS=10V, ID=0.5A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger


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    HY1N60B 2002/95/EC MIL-STD-750 1N60B 125oC -55oC 1N60B PDF

    1n60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    O-252 O-220 QW-R502-052 1n60 PDF

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


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    IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    QW-R502-052 PDF

    mosfet 1N60

    Abstract: 1n60 1N60 TO92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    QW-R502-052 mosfet 1N60 1n60 1N60 TO92 PDF

    1n60b

    Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    QW-R502-052 1n60b 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60 PDF

    600V 2A SOT223 MOSFET N-channel

    Abstract: 1n60b 1n60 diode T92 DIODE 1N60 mosfet MOSFET 50V 100A TO-220 1N60 TO92 diode 1n60 Diode AA3 1N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)


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    OT-223 O-220 QW-R502-052 600V 2A SOT223 MOSFET N-channel 1n60b 1n60 diode T92 DIODE 1N60 mosfet MOSFET 50V 100A TO-220 1N60 TO92 diode 1n60 Diode AA3 1N60G PDF

    1N6A

    Abstract: N552 zener 431 IN5530 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523
    Text: 7V SEMICONDUCTORS INC DTE D | fllBhbSQ ODODESB h | //~/3 Low Voltage Avalanche Zener Diodes These low voltage avalanche zener diodes are specifically designed for low current, low noise applications. The very sharp knees, low leakages, and low im p e d a n c e s at low


    OCR Scan
    013bbS0 250uA CurrN6088 1N6090 1N6091 1N6A N552 zener 431 IN5530 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 PDF

    N6037

    Abstract: 1N60B
    Text: Transient Voltage S u p p r e s s io n TVS D io d e s .1 N 6 0 3 6 Series - 1 N 607 2 A C^YDDM Control over power Invisible Protection M A XIM U M RATINGS W hen no problem s exist, Crydom T V S • P e ak pulse p o w e r (P p k ): D iod es are totally invisible to the circuits


    OCR Scan
    IN60i 1N6036 N6037 1N60B PDF