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    MOSFET 600V 25A Search Results

    MOSFET 600V 25A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 600V 25A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    R6025FNZ1

    Abstract: No abstract text available
    Text: R6025FNZ1 Datasheet Nch 600V 25A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.18W ID 25A PD 150W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6025FNZ1 O-247 R1102A R6025FNZ1

    FCH25N60

    Abstract: FCH25N60N mosfet 600V 25A TO247s
    Text: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCH25N60N FCH25N60N FCH25N60 mosfet 600V 25A TO247s

    FCH25N60N

    Abstract: No abstract text available
    Text: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCH25N60N FCH25N60N

    FCI25N60N

    Abstract: mosfet 600V 25A
    Text: SupreMOSTM FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCI25N60N mosfet 600V 25A

    FCP25N60N

    Abstract: F102 DIODE 83A mosfet 600V 25A
    Text: SupreMOS FCP25N60N_F102 TM tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCP25N60N F102 DIODE 83A mosfet 600V 25A

    Untitled

    Abstract: No abstract text available
    Text: R6025FNZ Nch 600V 25A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.18W ID 25A PD 150W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6025FNZ R1102A

    Untitled

    Abstract: No abstract text available
    Text: SupreMOS FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCH25N60N FCH25N60N

    Untitled

    Abstract: No abstract text available
    Text: R6025ANZ Nch 600V 25A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.15Ω ID ±25A PD 150W TO-3PF l Inner circuit l Features 1) Low on-resistance.


    Original     		PDF R6025ANZ

    F30NM60ND

    Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
    Text: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND


    Original     		PDF STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND O-220/FP/D2PAK/I2PAK/TO-247 STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND O-220 O-220FP F30NM60ND 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND

    30nm60

    Abstract: 30nm60n
    Text: STB30NM60N-STI30NM60N-STF30NM60N STP30NM60N-STW30NM60N N-channel 600V - 0.1Ω - 25A - TO-220/FP - TO-247 - D2/I2PAK second generation MDmesh Power MOSFET Preliminary Data Features Type VDSS RDS on Max ID PW STB30NM60N 600 V <0.13Ω 25A 190 W STI30NM60N


    Original     		PDF STB30NM60N-STI30NM60N-STF30NM60N STP30NM60N-STW30NM60N O-220/FP O-247 STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N O-247 30nm60 30nm60n

    Untitled

    Abstract: No abstract text available
    Text: SupreMOSTM FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior


    Original     		PDF FCH25N60N FCH25N60N

    Untitled

    Abstract: No abstract text available
    Text: FZ06BIA070FS target datasheet DC Boost Application flowSOL 0 BI 600V/25A General conditions BOOST = = = = VGEon VGEoff Rgon Rgoff Figure 1. MOSFET Figure 2. Typical average static loss as a function of input current IiRMS Ploss=f Iin FRED Typical average static loss as a function of


    Original     		PDF FZ06BIA070FS 00V/25A

    ixfh50n60

    Abstract: 50n60p IXFT50N60P3 IXFQ50N60P3 ixfh50n60p3 50N60P3 DS100310 N-channel MOSFET to-247 50a 50n60 N-channel MOSFET to-247 50a 600v
    Text: Advance Technical Information IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 600V = 50A Ω ≤ 145mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol


    Original     		PDF IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 O-268 O-247 50N60P3 ixfh50n60 50n60p ixfh50n60p3 DS100310 N-channel MOSFET to-247 50a 50n60 N-channel MOSFET to-247 50a 600v

    schematic diagram UPS

    Abstract: schematic diagram UPS 600 Power free STY25NA60
    Text: STY25NA60 N - CHANNEL 600V - 0.225 Ω - 25A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET TYPE STY25NA60 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.24 Ω 25 A TYPICAL RDS(on) = 0.225 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP


    Original     		PDF STY25NA60 Max247 Max247TM Max247 O-247, O-264. schematic diagram UPS schematic diagram UPS 600 Power free STY25NA60

    70n60

    Abstract: IXFL70N60Q2
    Text: Preliminary Technical Information IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 88mΩ 250ns ISOPLUS264


    Original     		PDF IXFL70N60Q2 250ns ISOPLUS264 70N60Q2 8-08-A 70n60 IXFL70N60Q2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFB70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 70A Ω 80mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions


    Original     		PDF IXFB70N60Q2 250ns PLUS264TMres 70N60Q2 8-08-A

    st 23-1/36

    Abstract: f25nm60n mosfet 600V 20A P25NM60N F25NM60 Part Marking STMicroelectronics P25NM60 w25nm60n 11A 650V MOSFET STB25NM60N
    Text: STB25NM60N/-1 - STF25NM60N STP25NM60N - STW25NM60N N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM60N 650V <0.170Ω 20A STB25NM60N-1 650V <0.170Ω


    Original     		PDF STB25NM60N/-1 STF25NM60N STP25NM60N STW25NM60N O-220 O-247 STB25NM60N STB25NM60N-1 O-220 st 23-1/36 f25nm60n mosfet 600V 20A P25NM60N F25NM60 Part Marking STMicroelectronics P25NM60 w25nm60n 11A 650V MOSFET STB25NM60N

    70n60

    Abstract: IXFL70N60Q2
    Text: IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 92mΩ 250ns ISOPLUS264 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFL70N60Q2 250ns ISOPLUS264 26lts 70N60Q2 8-08-A 70n60 IXFL70N60Q2

    F25NM60N

    Abstract: P25NM60N STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N W25NM60N 850mj
    Text: STB25NM60N/-1 - STF25NM60N STP25NM60N - STW25NM60N N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM60N 650V <0.170Ω 20A STB25NM60N-1 650V <0.170Ω


    Original     		PDF STB25NM60N/-1 STF25NM60N STP25NM60N STW25NM60N O-220 O-247 STB25NM60N STB25NM60N-1 O-220 F25NM60N P25NM60N STB25NM60N STB25NM60N-1 STF25NM60N STW25NM60N W25NM60N 850mj

    P25NM60N

    Abstract: W25NM60N STF25NM60N
    Text: STB25NM60N/-1 - STF25NM60N STP25NM60N - STW25NM60N N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 3 STB25NM60N 650V <0.170Ω 20A STB25NM60N-1 650V <0.170Ω


    Original     		PDF STB25NM60N/-1 STF25NM60N STP25NM60N STW25NM60N O-220 O-247 STB25NM60N STB25NM60N-1 P25NM60N W25NM60N

    IXFN SOT227

    Abstract: IXFN70N60Q2
    Text: HiPerFETTM Power MOSFET Q2-Class IXFN70N60Q2 VDSS = 600V ID25 = 70A Ω RDS on ≤ 80mΩ ≤ 250ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFN70N60Q2 250ns OT-227 E153432 70N60Q2 8-08-A IXFN SOT227 IXFN70N60Q2

    IXFB70N60Q2

    Abstract: 70n60
    Text: IXFB70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low QG, Low Intrinsic RG High dv/dt, Low trr 600V 70A Ω 88mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFB70N60Q2 250ns PLUS264TM 70N60Q2 8-08-A IXFB70N60Q2 70n60

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFB70N60Q2 N-Channel Enhancement Mode Avalanche Rated, Low QG, Low Intrinsic RG High dv/dt, Low trr 600V 70A Ω 88mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFB70N60Q2 250ns PLUS264TM 70N60Q2 8-08-A

    STB36NM60N

    Abstract: 36NM60N
    Text: STB36NM60N N-channel 600 V, 0.98 Ω, 25 A, MDmesh II Power MOSFET in D2PAK Preliminary data Features Type VDSS @ TJmax RDS on max ID PW STB36NM60N 600V <0.105Ω 32A 250W • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance


    Original     		PDF STB36NM60N STB36NM60N 36NM60N