Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FCI25N60N Search Results

    SF Impression Pixel

    FCI25N60N Price and Stock

    onsemi FCI25N60N

    MOSFET N-CH 600V 25A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCI25N60N Tube 50
    • 1 -
    • 10 -
    • 100 $4.9034
    • 1000 $4.9034
    • 10000 $4.9034
    		Buy Now

    onsemi FCI25N60N-F102

    MOSFET N-CH 600V 25A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCI25N60N-F102 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Newark FCI25N60N-F102 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Rochester Electronics FCI25N60N-F102 57 1
    • 1 $3.21
    • 10 $3.21
    • 100 $3.02
    • 1000 $2.73
    • 10000 $2.73
    		Buy Now

    onsemi FCI25N60N_F102

    Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-262 Rail - Rail/Tube (Alt: FCI25N60N-F102)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FCI25N60N_F102 Tube 4 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    FCI25N60N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FCI25N60N Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 25A I2PAK Original PDF
    FCI25N60N_F102 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 25A I2PAK Original PDF
    FCI25N60N-F102 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 25A I2PAK Original PDF

    FCI25N60N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FCI25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology


    Original     		PDF FCI25N60N

    Untitled

    Abstract: No abstract text available
    Text: FCI25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCI25N60N

    FCI25N60N

    Abstract: mosfet 600V 25A
    Text: SupreMOSTM FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCI25N60N mosfet 600V 25A