BUZ11
Abstract: buz11 application note BUZ1 TB334 TA9771
Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features
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BUZ11
O220AB
BUZ11
buz11 application note
BUZ1
TB334
TA9771
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BUZ71 application
Abstract: No abstract text available
Text: BUZ71 Data Sheet [ /Title BUZ7 1 /Subject (14A, 50V, 0.100 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features
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BUZ71
O220AB
TA9770.
BUZ71 application
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Untitled
Abstract: No abstract text available
Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features
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BUZ11
O220AB
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CMLM8205
Abstract: PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A
Text: Product Brief CMLM8205 Multi Discrete Module 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module consisting of a single P-Channel Enhancement Mode MOSFET
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CMLM8205
280mA,
500mA
OT-563
CMLM8205
OT-563
100mA
21x9x9
27x9x17
20x18x5
PB CMLM8205
mosfet 4812
marking 34 diode SCHOTTKY
sot-563 MOSFET D1
P-Channel Enhancement MOSFET module
4812 mosfet
"Schottky Diode"
Schottky Diode
power mosfet 500 A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary BSS139Z Power MOSFET 0.2A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC BSS139Z is an N-Channel power MOSFET, it uses UTC’s advanced technology to provide customers with high switching speed and low threshold voltage.
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BSS139Z
BSS139Z
200mA
BSS139ZL-AE2-R
BSS139ZG-AE2-R
OT-23-3
QW-R502-862
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MOSFET 50V 100A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N05 Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance and superior switching
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UTT100N05
UTT100N05
O-220
UTT100N05L-TA3-T
UTT100N05G-TA3-T
QW-R502-688
MOSFET 50V 100A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N05 Power MOSFET 80A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N05 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, superior switching performance
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UTT80N05
UTT80N05
UTT80N05L-TA3-T
UTT80N05G-TA3-T
QW-R502-695
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30N05 Power MOSFET 30A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT30N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT30N05
UTT30N05
UTT30N05L-TN3-R
UTT30N05G-TN3-R
QW-R502-660
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT36N05 Power MOSFET 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT36N05
UTT36N05
UTT36N05L-TA3-T
UTT36N05G-TA3-T
QW-R502-654
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N05 Power MOSFET 60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT60N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT60N05
UTT60N05
UTT60N05L-TA3-T
UTT60N05G-TA3-T
QW-R502-662
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IRF7103Q
Abstract: No abstract text available
Text: PD - 93944D IRF7103Q AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats VDSS Benefits 50V l l l l l l Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance
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93944D
IRF7103Q
EIA-481
EIA-541.
IRF7103Q
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50N05 Power MOSFET 50A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT50N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current
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UTT50N05
UTT50N05
UTT50N05L-TN3-R
UTT50N05G-TN3-R
QW-R502-663
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FDD8N50NZ
Abstract: FDD8N50 FDD8N50NZTM
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and
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FDD8N50NZ
FDD8N50NZ
FDD8N50
FDD8N50NZTM
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60n05
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 60N05 Preliminary Power MOSFET 60A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate charge.
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60N05
60N05
130nC)
60N05L-TA3-T
60N05G-TA3-T
QW-R502-716
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POWER MOSFET Rise Time 1 ns
Abstract: IXZ4DF18N50 S 170 MOSFET DEIC-515 mosfet IDM 200 DEIC515 rf mosfet power amplifier 10UF IXZ318N50 deic 515
Text: IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver matched to MOSFET 500 Volts 19 A 0.29 Ohms Features • Isolated substrate − high isolation voltage >2500V − excellent thermal transfer
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IXZ4DF18N50
DEIC-515
IXZ318N50
IXZ4DF18N50
POWER MOSFET Rise Time 1 ns
S 170 MOSFET
mosfet IDM 200
DEIC515
rf mosfet power amplifier
10UF
deic 515
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2N7225U
Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225
Text: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91549B
IRFN250
JANTX2N7225U
JANTXV2N7225U
MIL-PRF-19500/592]
2N7225U
SMD1P
IRFN250
JANTX2N7225U
JANTXV2N7225U
mosfet ir 250 n
2n7225
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500w mosfet power amplifier circuit diagram
Abstract: RF POWER MOSFET IXZ421DF18N50 500w hf power amplifier circuit diagram power mosfet triggering circuit DEIC421 mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier
Text: IXZ421DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC421 Driver combined with a IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability
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IXZ421DF18N50
DEIC421
IXZ318N50
IXZ421DF18N50
500w mosfet power amplifier circuit diagram
RF POWER MOSFET
500w hf power amplifier circuit diagram
power mosfet triggering circuit
mosfet triggering circuit
500w power amplifier PCB layout
driver mosfet
mosfet HF amplifier
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4422 mosfet
Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
Text: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.
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AN-30
TC4424
4422 mosfet
MOSFET 4420
Matching MOSFET Drivers to MOSFETs
parallel mosfet
4469 mosfet
use of zener diode
4420 mosfet
mosfet 4468
4422 dual mosfet
irf4501
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2n7224U
Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U
Text: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91547B
IRFN150
JANTX2N7224U
JANTXV2N7224U
MIL-PRF-19500/592]
100Volt,
2n7224U
IRFN150
JANTX2N7224U
JANTXV2N7224U
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IXZ4DF12N100
Abstract: DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier DEIC-515 RF Amplifier 500w 175 mhz
Text: IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability
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IXZ4DF12N100
DEIC-515
DE375-102N12A
1000lvin
IXZ4DF12N100
DEIC515
500w mosfet power amplifier circuit diagram
POWER MOSFET Rise Time 1 ns
circuit diagram of smps 500w
RF POWER MOSFET
deic 515
rf mosfet power amplifier
RF Amplifier 500w 175 mhz
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FDA70N20
Abstract: No abstract text available
Text: FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA70N20
FDA70N20
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international rectifier
Abstract: IRFM260 4.5v to 100v input regulator
Text: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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91388C
O-254AA)
IRFM260
O-254AA.
MIL-PRF-19500
international rectifier
IRFM260
4.5v to 100v input regulator
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irf 540 mosfet
Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
ls 7400
PD908
014 IR MOSFET Transistor
IRFM064
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IRFM054
Abstract: No abstract text available
Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM054 RDS(on) 0.027 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90709B
O-254AA)
IRFM054
O-254AA.
MIL-PRF-19500
IRFM054
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