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    MOSFET 4435 Search Results

    MOSFET 4435 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4435 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4435 mosfet

    Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
    Text: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展


    Original     		PDF APM70N03 APM3005/7/9N APM2509/6/4N MO-23/25/26/89, SC-70 0V/20V, 30mohm /55mohm~ APM2300A/2322/2324, APM2310/2320/2306, 4435 mosfet APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310

    4435SC

    Abstract: Mos-Fet 4435SC C391Q8 mosfet 4435sc
    Text: CYStech Electronics Corp. Spec. No. : C391Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4435Q8 Description The MTP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.


    Original     		PDF C391Q8 MTP4435Q8 MTP4435Q8 UL94V-0 4435SC Mos-Fet 4435SC C391Q8 mosfet 4435sc

    4435sc

    Abstract: Mos-Fet 4435SC MEP4435Q8 C391Q8 mosfet 4435sc
    Text: CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MEP4435Q8 Description The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.


    Original     		PDF C391Q8-A MEP4435Q8 MEP4435Q8 UL94V-0 4435sc Mos-Fet 4435SC C391Q8 mosfet 4435sc

    4435a

    Abstract: 4435a MOSFET F 4435a FHK4435A
    Text: 增強型場效應管 P-Channel Enhancement-Mode MOSFET FHK4435A P-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-223 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻


    Original     		PDF FHK4435A OT-223 OT223 4435a 4435a MOSFET F 4435a FHK4435A

    4435 mosfet

    Abstract: No abstract text available
    Text: MOSFET SMD Type P-Channel MOSFET SI4435DY SOP-8 • Features ● VDS=-30V ● RDS on =0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V S G S 1 8 D S 2 7 D S 3 6 D G 4 5 D D Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage


    Original     		PDF SI4435DY 00A/us 4435 mosfet

    4435gm

    Abstract: Mosfet 4435gm
    Text: AP4435GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D D Low On-resistance -30V RDS ON D D 20m ID Fast Switching Characteristic RoHS Compliant SO-8 S S S -9A G Description


    Original     		PDF AP4435GM-HF 4435GM 4435gm Mosfet 4435gm

    4435SC

    Abstract: Mos-Fet 4435SC mosfet 4435sc SSG4435 SOP8 Package MOSFET 30v sop-8 diode 8A 400 V DSASW0059405 mar 620
    Text: SSG4435 -8A, -30V, RDS ON 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF SSG4435 SSG4435 4435SC 01-Mar-2011 4435SC Mos-Fet 4435SC mosfet 4435sc SOP8 Package MOSFET 30v sop-8 diode 8A 400 V DSASW0059405 mar 620

    4435GM

    Abstract: 4435g AP4435GMHF ap4435gm AP4435GM-HF
    Text: AP4435GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic ▼ RoHS Compliant SO-8 S S S


    Original     		PDF AP4435GM-HF 4435GM 4435GM 4435g AP4435GMHF ap4435gm AP4435GM-HF

    4435GM

    Abstract: ap4435gm 4435g AP4435 ap4435g
    Text: AP4435GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic SO-8 S S S -9A G Description D


    Original     		PDF AP4435GM 4435GM 4435GM ap4435gm 4435g AP4435 ap4435g

    4435GJ

    Abstract: 4435gj MOSFET
    Text: AP4435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D Lower On-resistance RDS ON Fast Switching Characteristic ID -30V 20m -40A G S Description G The TO-252 package is widely preferred for all commercial-industrial


    Original     		PDF AP4435GH/J O-252 AP4435GJ) O-251 O-251 4435GJ 4435GJ 4435gj MOSFET

    4435 mosfet

    Abstract: Mi 4435 MOSFET 4435 4435 MARKING CODE 4435 marking 4435 APM4435K STD-020C 4435 m
    Text: APM4435K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-8A , D RDS ON =16mΩ(typ.) @ VGS=-10V RDS(ON)=24mΩ(typ.) @ VGS=-4.5V • • • Reliable and Rugged • Lead Free Available (RoHS Compliant) D D D S Super High Dense Cell Design


    Original     		PDF APM4435K -30V/-8A 4435 mosfet Mi 4435 MOSFET 4435 4435 MARKING CODE 4435 marking 4435 APM4435K STD-020C 4435 m

    4435GH

    Abstract: 4435GJ 4435gj MOSFET AP4435GH AP4435GJ 4435*gj 4435g AP4435 marking codes transistors SSs 4435
    Text: AP4435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic -40A G S Description The TO-252 package is widely preferred for all commercial-industrial


    Original     		PDF AP4435GH/J O-252 AP4435GJ) O-251 O-251 4435GJ 4435GH 4435GJ 4435gj MOSFET AP4435GH AP4435GJ 4435*gj 4435g AP4435 marking codes transistors SSs 4435

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4435GM-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance BV DSS -30V Fast Switching Performance RDS ON 20mΩ G RoHS-compliant, Halogen-free S ID -9A Description D Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		PDF AP4435GM-HF-3 AP4435GM-HF-3 AP4435 4435GM

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4435GYT-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Good Thermal Performance Low On-resistance G BV DSS -30V R DS ON 21mΩ ID RoHS-compliant, halogen-free -11A S Description D Advanced Power MOSFETs from APEC provide the designer with


    Original     		PDF AP4435GYT-HF-3 AP4435 4435GYT

    Untitled

    Abstract: No abstract text available
    Text: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 8 7 6 D 3 S 5 D 4 G -10 AMPERES DRAIN SOURCE VOLTAGE D S 2 Features: DRAIN CURRENT D S 1 P b Lead Pb -Free -30 VOLTAGE * Super high dense * Cell design for extremely low R DS(ON) * -30V/-10A,R DS(ON)<30mΩ@VGS = -10V


    Original     		PDF WTK4435 -30V/-10A -30V/-7A WTK4435, 09-Jan-2014

    4435sc

    Abstract: WTK4435 Mos-Fet 4435SC mosfet 4435sc le1d
    Text: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 7 6 D 3 D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN CURRENT -8 AMPERES DRAIN SOURCE VOLTAGE 5 D 4 G -30 VOLTAGE Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<20mΩ@VGS = -10V * RDS(ON)<35mΩ@VGS = -4.5V


    Original     		PDF WTK4435 WTK4435 300us, 03-May-07 4435sc Mos-Fet 4435SC mosfet 4435sc le1d

    4435 transistor so-8

    Abstract: 4435 mosfet AN007 4435 SO-8 SMD 4435 PCR 406 TRANSISTOR smd transistor 513 4435 smd transistor pcr 406 4435* mos
    Text: AN007 High Efficiency LCD Monitor Power Design Using AIC1578 DESCRIPTION are ideal for portable equipment. The AIC1578 is a high performance step-down In order to maintain good conversion efficiency DC/DC converter, designed to drive an external form light loads to full loads, the AIC1578 uses the


    Original     		PDF AN007 AIC1578 AIC1578 AIC1578CS CEM4435 AIC1085CM 1N5820 O-263 4435 transistor so-8 4435 mosfet AN007 4435 SO-8 SMD 4435 PCR 406 TRANSISTOR smd transistor 513 4435 smd transistor pcr 406 4435* mos

    transistor pcr 406

    Abstract: 4435 transistor so-8 PCR 406 TRANSISTOR smd TRANSISTOR 1D AIC1578CS 4435 mosfet 4435 SO-8 470f 10 SMD 4435 SMD Transistor 1F
    Text: AN99-001 High Efficiency LCD Monitor Power Design Using AIC1578 Michael Huang DESCRIPTION are ideal for portable equipment. The AIC1578 is a high performance step-down In order to maintain good conversion efficiency DC/DC converter, designed to drive an external


    Original     		PDF AN99-001 AIC1578 AIC1578 AIC1578CS CEM4435 AIC1085CM 1N5820 470mF transistor pcr 406 4435 transistor so-8 PCR 406 TRANSISTOR smd TRANSISTOR 1D AIC1578CS 4435 mosfet 4435 SO-8 470f 10 SMD 4435 SMD Transistor 1F

    4F smd transistor

    Abstract: transistor pcr 406 4435 mosfet PCR 406 TRANSISTOR 4435 smd 4435 transistor so-8 16V DC to 12v dc 5 amp converter circuit diagram aic 1578 cs 16V DC to 12v dc 8 amp converter circuit diagram AIC1578
    Text: AN99-SR01EN March 1999 High Efficiency LCD Monitor Power Design Using AIC1578 Michael Huang DESCRIPTION In order to maintain good conversion efficiency from light load to full load, the AIC1578 uses the intermittent switch control method of PFM PulseFrequency Modulation rather than the conventional


    Original     		PDF AN99-SR01EN AIC1578 AIC1578 AIC1578. AIC1578CS CEM4435 AIC1085CM O-263 1N5820 4F smd transistor transistor pcr 406 4435 mosfet PCR 406 TRANSISTOR 4435 smd 4435 transistor so-8 16V DC to 12v dc 5 amp converter circuit diagram aic 1578 cs 16V DC to 12v dc 8 amp converter circuit diagram

    4435 SO-8

    Abstract: PACKC12 4435 fairchild
    Text: bq24740 www.ti.com . SLUS736B – DECEMBER 2006 – REVISED NOVEMBER 2008 Host-Controlled Multi-Chemistry Battery Charger With Low Input Power Detect


    Original     		PDF bq24740 SLUS736B 30-ns 4435 SO-8 PACKC12 4435 fairchild

    Untitled

    Abstract: No abstract text available
    Text: bq24740 www.ti.com. SLUS736C – DECEMBER 2006 – REVISED MARCH 2009 Host-Controlled Multi-Chemistry Battery Charger With Low Input Power Detect


    Original     		PDF bq24740 SLUS736C 30-ns

    Untitled

    Abstract: No abstract text available
    Text: bq24740 www.ti.com. SLUS736C – DECEMBER 2006 – REVISED MARCH 2009 Host-Controlled Multi-Chemistry Battery Charger With Low Input Power Detect


    Original     		PDF bq24740 SLUS736C 30-ns

    tic 2260

    Abstract: FDS4435 CBVK741B019 F63TNR L86Z
    Text: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS4435 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features This P-Channel Logic Level M OSFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize


    OCR Scan     		PDF FDS4435 tic 2260 FDS4435 CBVK741B019 F63TNR L86Z

    4435m

    Abstract: 4431 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's Data S heet MTB50P03HDL HD TM O S E -F E T ™ High Energy P o w er FET D2PAK fo r S u rfa c e M ount M o t o r o la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM


    OCR Scan     		PDF