FSS430
Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70
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JANSR2N7402
FSS430R4
R2N74
FSS430
2E12
3E12
FSS430R4
JANSR2N7402
Rad Hard in Fairchild for MOSFET
J-112
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PDF
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zener diode B5
Abstract: STD3PS25 STD3PS25-1
Text: STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY MOSFET TYPE STD3PS25 STD3PS25-1 • ■ ■ ■ ■ VDSS RDS on ID 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A TYPICAL RDS(on) = 2.1Ω 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
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STD3PS25
STD3PS25-1
STD3PS25
zener diode B5
STD3PS25-1
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MOSFET P-CH 250V 5A
Abstract: 4.7 B2 zener STD3PS25 STD3PS25-1
Text: STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY MOSFET TYPE STD3PS25 STD3PS25-1 VDSS RDS on ID 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A TYPICAL RDS(on) = 2.1Ω 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION STANDARD OUTLINE FOR EASY
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STD3PS25
STD3PS25-1
STD3PS25
MOSFET P-CH 250V 5A
4.7 B2 zener
STD3PS25-1
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TO-251 footprint
Abstract: Diode zener 3a STD3NM50 STD3NM50-1 IPAK
Text: STD3NM50 STD3NM50-1 N-CHANNEL 550V @ Tjmax- 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh MOSFET TYPE STD3NM50 STD3NM50-1 VDSS @Tjmax RDS(on) ID 550V 550V <3Ω <3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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STD3NM50
STD3NM50-1
TO-251 footprint
Diode zener 3a
STD3NM50
STD3NM50-1
IPAK
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PDF
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TO-251 footprint
Abstract: STD3NM50 STD3NM50-1
Text: STD3NM50 STD3NM50-1 N-CHANNEL 550V @ Tjmax- 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS @Tjmax RDS(on) ID 550V 550V <3Ω <3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD3NM50
STD3NM50-1
TO-251 footprint
STD3NM50
STD3NM50-1
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PDF
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Untitled
Abstract: No abstract text available
Text: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 3Ω < 3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD3NM50
STD3NM50-1
O-252
O-251
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diode circuit diagram
Abstract: No abstract text available
Text: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 3Ω < 3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD3NM50
STD3NM50-1
O-252
O-251
diode circuit diagram
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge
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UF3N25Z
UF3N25Z
O-252
OT-223
O-251
UF3N25ZL-AA3-R
UF3N25ZG-AA3-R
UF3N25ZL-TM3-T
UF3N25ZG-TM3-T
UF3N25ZL-TN3-R
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2E12
Abstract: 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7402
FSS430R4
2E12
3E12
FSS430R4
JANSR2N7402
relay 12v 300 ohm
FSS430
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3N25 Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC UF3N25 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge
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UF3N25
UF3N25
O-252
OT-223
O-251
UF3N25L-AA3-R
UF3N25G-AA3-R
UF3N25L-TM3-T
UF3N25G-TM3-T
UF3N25L-TN3-R
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STD3NM50
Abstract: STD3NM50-1
Text: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V <3Ω <3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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STD3NM50
STD3NM50-1
STD3NM50
STD3NM50-1
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF3N25Z Power MOSFET 3A, 250V N-CHANNEL POWER MOSFET 1 DESCRIPTION SOT-223 The UTC UF3N25Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge
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UF3N25Z
OT-223
UF3N25Z
O-252
O-251
UF3N25ZL-AA3-R
UF3N25ZG-AA3-R
UF3N25ZL-TM3-T
UF3N25ZG-TM3-T
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Untitled
Abstract: No abstract text available
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7402
FSS430R4
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2E12
Abstract: 3E12 FRS430D FRS430H FRS430R 794V
Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS430D,
FRS430R,
FRS430H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
2E12
3E12
FRS430D
FRS430H
FRS430R
794V
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2E12
Abstract: 3E12 FRS430D FRS430H FRS430R Rad Hard in Fairchild for MOSFET
Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS430D,
FRS430R,
FRS430H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
2E12
3E12
FRS430D
FRS430H
FRS430R
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS430D,
FRS430R,
FRS430H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N50 Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220F
O-252
QW-R502-530
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AOT3N50
Abstract: AOTF3N50
Text: AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Features The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT3N50/AOTF3N50
AOT3N50
AOTF3N50
O-220
O-220F
AOTF3N50
AOT3N50
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747 diode
Abstract: 3N50Z
Text: UNISONIC TECHNOLOGIES CO., LTD 3N50Z Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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3N50Z
3N50Z
O-220F
QW-R502-747
747 diode
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3N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N50 Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET 1 TO-220F DESCRIPTION The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220F
O-252
QW-R502-530
3N50
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AOT3N50
Abstract: AOTF3N50
Text: AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT3N50/AOTF3N50
AOT3N50
AOTF3N50
O-220
O-220F
AOT3N50
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Untitled
Abstract: No abstract text available
Text: AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOD3N50/AOU3N50
AOD3N50
AOU3N50
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VIVA
Abstract: No abstract text available
Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRS430D,
FRS430R,
FRS430H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
-257AA
VIVA
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PDF
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Untitled
Abstract: No abstract text available
Text: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRM430D,
FRM430R,
FRM430H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
desi45
O-204AA
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PDF
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