Untitled
Abstract: No abstract text available
Text: SCT2120AF Datasheet N-channel SiC power MOSFET Outline VDSS 650V RDS on (Typ.) 120m ID 29A PD 165W TO220AB Inner circuit Features (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel
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SCT2120AF
O220AB
R1102A
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Untitled
Abstract: No abstract text available
Text: Datasheet MICROOPTO OPTO Modules NEW The MICROOPTO line of solid-state relays provides several options for switching and protecting signals. The line features pluggable cross connections and industrial standard marking options, all in a standard terminal block footprint of 6.1mm.
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GOSTME25;
2003-Vl-Abs.
UL508
12-28VDC/5VTTL
4/10-LIT1006
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R6020FNJ
Abstract: No abstract text available
Text: R6020FNJ Nch 600V 20A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.28Ω ID ±20A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).
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R6020FNJ
R6020FNJ
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CHT-PLA8543C
Abstract: No abstract text available
Text: The Leader in High Temperature Semiconductor Solutions Version: 3.1 CHT-NEPTUNE PRELIMINARY DATASHEET High-Temperature High Voltage, Silicon Carbide MOSFET General description Features high-temperature, • Specified from -55 to +225°C Tj high-voltage, Silicon Carbide MOSFET
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O-257
150make
PDS-111102
20-Sep-13
CHT-PLA8543C
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IXTM20N60
Abstract: SHD239607 mosfet 300V 10A type
Text: SHD239607 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS
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SHD239607
IXTM20N60
IXTM20N60
SHD239607
mosfet 300V 10A type
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Amp. mosfet 1000 watt
Abstract: SHD225608
Text: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 600 Volt, 20 Amp, 0.35 Ohm MOSFET Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT
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SHD225608
250mA
Amp. mosfet 1000 watt
SHD225608
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 600 Volt, 0.35 Ohm MOSFET Isolated and Hermetically Sealed Surface Mount Package Electrically equivalent to IXTM20N60 MAXIMUM RATINGS
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SHD239607
IXTM20N60
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IXFM20N60
Abstract: SHD239608
Text: SHD239608 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 703, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXFM20N60 MAXIMUM RATINGS
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SHD239608
IXFM20N60
IXFM20N60
SHD239608
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Untitled
Abstract: No abstract text available
Text: R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6020ANX
O-220FM
R1120A
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R6020-ANX
Abstract: No abstract text available
Text: R6020ANX Datasheet Nch 600V 20A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6020ANX
O-220FM
R1120A
R6020-ANX
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Untitled
Abstract: No abstract text available
Text: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.
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R6020FNX
O-220FM
R1102A
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FDPF*10N60NZ
Abstract: FDPF10N60NZ FDP10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power
Text: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDP10N60NZ
FDPF10N60NZ
FDPF*10N60NZ
FDPF10N60NZ
fdpf10n60
FDPF10N60N
fdp10
FDPF
fdpf10n6
220 to 110 power
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Untitled
Abstract: No abstract text available
Text: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A • Low Gate Charge ( Typ. 23nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDP10N60NZ
FDPF10N60NZ
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Untitled
Abstract: No abstract text available
Text: R SuperFET II FCP190N60 / FCPF190N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETII is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower
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FCP190N60
FCPF190N60
FCPF190N60
160pF)
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FDPF10N60NZ
Abstract: FDPF*10N60NZ FDP10N60NZ FDPF10N60 600v 10A ultra fast recovery diode
Text: FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m Features Description • RDS on = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and
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FDP10N60NZ
FDPF10N60NZ
FDPF10N60NZ
FDPF*10N60NZ
FDPF10N60
600v 10A ultra fast recovery diode
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RJH60F7
Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to
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RJP6085DPN
O-220AB
RJP6085DPK
RJH6085BDPK
RJH6086BDPK
RJH6087BDPK
RJH6088BDPK
RJH60F7
rjh60f5
RJH60
RJH60F4
RJH60F7A
BCR25KR
RJH60F6
rjh1cf7
rjh60d2
RJK0652
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F10N60
Abstract: No abstract text available
Text: SDP/F10N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 10A G D S 0.75 @ VGS=10V,ID=5A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
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SDP/F10N60
O-220
O-220F
SDP10N60
SDF10N60
O-220/220F
F10N60
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TRANSISTORS 132 GD
Abstract: IRF1010 IRF737LC
Text: Previous Datasheet Index Next Data Sheet PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω
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IRF737LC
IRF1010
TRANSISTORS 132 GD
IRF1010
IRF737LC
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IRFDC20
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD -9.1228 IRFDC20 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 600V RDS on = 4.4Ω
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IRFDC20
IRFDC20
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Untitled
Abstract: No abstract text available
Text: FCPF190N60_F152 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior
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FCPF190N60
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TRIACS EQUIVALENT LIST
Abstract: 440v to 12v smps power supply REG IC 48V IN 12V 10A OUT 440v ac voltage regulator 440v to 12v smps power supply 50A dimmer diagrams IGBT FKPF12N60 24v 12v 20A regulator 600V igbt dc to dc buck converter 24V 10A SMPS
Text: FS8S0765RC The FS8S0765RC is a highly integrated off-line power switch FPS for CRT monitor fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (650V minimum breakdown rating) with a
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FS8S0765RC
new/fs8s0765rc
FS8S0765RC
ACE1502
FAN1655
FAN2534
FAN5098
Power247TM,
TRIACS EQUIVALENT LIST
440v to 12v smps power supply
REG IC 48V IN 12V 10A OUT
440v ac voltage regulator
440v to 12v smps power supply 50A
dimmer diagrams IGBT
FKPF12N60
24v 12v 20A regulator
600V igbt dc to dc buck converter
24V 10A SMPS
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Untitled
Abstract: No abstract text available
Text: FCPF190N60E_F152 N-Channel SuperFET II MOSFET 600 V, 20.6 A, 190 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior
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FCPF190N60E
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SSH10N60A
Abstract: No abstract text available
Text: SSH10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V
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SSH10N60A
SSH10N60A
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IRFPC60LC
Abstract: IRFPE30
Text: Previous Datasheet Index Next Data Sheet PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
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IRFPC60LC
stanFPE30
IRFPC60LC
IRFPE30
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