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    MOSFET 300V 10A Search Results

    MOSFET 300V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 300V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    10N30

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a


    Original     		10N30 10N30 QW-R502-738 PDF

    10N30

    Abstract: 738A power mosfet 200A
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a


    Original     		10N30 10N30 O-220 QW-R502-738 738A power mosfet 200A PDF

    TRANSISTORS 132 GD

    Abstract: IRF1010 IRF737LC
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω


    Original     		IRF737LC IRF1010 TRANSISTORS 132 GD IRF1010 IRF737LC PDF

    FK20UM-6

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FK20UM-6 HIGH-SPEED SWITCHING USE FK20UM-6 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr ¡VDSS . 300V


    Original     		FK20UM-6 150ns O-220 FK20UM-6 PDF

    FK20SM-6

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FK20SM-6 HIGH-SPEED SWITCHING USE FK20SM-6 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 300V


    Original     		FK20SM-6 150ns FK20SM-6 PDF

    FK20VS-6

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 OUTLINE DRAWING r Dimensions in mm 4.5 1.3 +0.3 –0 1.5 3.0 –0.5 +0.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr ¡VDSS . 300V


    Original     		FK20VS-6 150ns O-220S FK20VS-6 PDF

    TRANSISTORS 132 GD

    Abstract: IRF1010 IRF737LC
    Text: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve


    Original     		IRF737LC IRF1010 TRANSISTORS 132 GD IRF1010 IRF737LC PDF

    TRANSISTORS 132 GD

    Abstract: IRF1010 IRF737LC
    Text: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve


    Original     		IRF737LC 12-Mar-07 TRANSISTORS 132 GD IRF1010 IRF737LC PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve


    Original     		IRF737LC 08-Mar-07 PDF

    88N30W

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP88N30W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance D Simple Drive Requirement Fast Switching Characteristics G BV DSS 300V R DS ON 48mΩ ID 48A S Description Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		AP88N30W-HF-3 AP88N30W-HF-3 AP88N30 88N30W 88N30W PDF

    IXTI76N25T

    Abstract: IXTP76N25T IXTQ76N25T 2ZAO0732373 76N25T DIODE 76A t244
    Text: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T G Typical avalanche BV = 300V TO-247 IXTH S (TAB) G TO-262 (IXTI) G D S (TAB) D TO-220 (IXTP) Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T O-247 O-262 O-263 O-220 76N25T IXTP76N25T IXTQ76N25T 2ZAO0732373 DIODE 76A t244 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10UM-6 HIGH-SPEED SWITCHING USE FS10UM-6 ' V dss . .300V ' rDS ON (MAX) . . 0.68Í2 ' Id . . 10A


    OCR Scan     		FS10UM-6 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5VS-6 HIGH-SPEED SWITCHING USE FS5VS-6 ♦ # • Voss . 300V • rDS ON (MAX) .1 ,6Q • Id . 5A


    OCR Scan     		PDF

    n channel mosfet 1400 v

    Abstract: FS20SM6
    Text: MITSUBISHI Neh POWER MOSFET FS20SM-6 HIGH-SPEED SWITCHING USE FS20SM-6 OUTLINE DRAWING D im ension s in mm 4.5 • V dss .300V .0.26Q • I d . 20 A


    OCR Scan     		FS20SM-6 n channel mosfet 1400 v FS20SM6 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK20KM-6 HIGH-SPEED SWITCHING USE FK20KM-6 OUTLINE DRAWING Dim ensions in mm 10 ± 0.3 2.8 ± 0.2 V d s s . 300V rDS ON (MAX) . 0.33Í2


    OCR Scan     		FK20KM-6 150ns O-220FN 57KH23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 • V dss . 300V • ros O N (M AX ) . 0.33Q • ID . 20A • Integrated Fast Recovery Diode (M A X .)


    OCR Scan     		FK20VS-6 150ns PDF

    SAM25

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-6 HIGH-SPEED SWITCHING USE FS1 OVS-6 OUTLINE DRAWING Dimensions in mm , 4.5 . .1-3 C\ a ,CQ -0 ^ - 4 ; 0.5 •ï • V dss . 300V • rDS ON (MAX) . 0.68Q


    OCR Scan     		O-220S SAM25 PDF

    IRF737LCL

    Abstract: f1010h
    Text: PD - 9.1314 International M Rectifier IRF737LC PRELIMINARY HEXFET Power MOSFET • • • • • Reduced Gate Drive Requirement Enhanced 30V Vqs Rating Reduced Qss, Coss, Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V ^ D S o n =


    OCR Scan     		IRF737LC IRF737LCL f1010h PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS20SM-6 HIGH-SPEED SWITCHING USE FS20SM-6 O UTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 kf ff 4.4 1.0 5.45 5.45 0.6 Q w r V d s s .300V q O q w


    OCR Scan     		FS20SM-6 57KH23 PDF

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD 91314 IRF737LC preliminary HEXFET^ Power MOSFET • Reduced Gate Drive Requirement • Enhanced 30V V qs Rating • Reduced Ciss. Coss> C rss • Extrem ely High Frequency Operation • Repetitive Avalanche Rated Voss = 300V RDS on =


    OCR Scan     		IRF737LC 002305b PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10KM-6 HIGH-SPEED SWITCHING USE FS10KM-6 OUTLINE DRAWING Dimensions in mm 10 ± 0 3 2,8 t 0.2 w •ig ¿ • V d s s . 300V GATE DRAIN SOURCE • rDS ON (MAX) .0.680


    OCR Scan     		FS10KM-6 O-220FN 5710c PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK20UM-6 HIGH-SPEED SWITCHING USE FK20UM-6 OUTLINE DRAWING I V iu g 'u j I Dimensions I in mm Ti < 5 i -3-Ê V' r G A TE • VDSS . 300V • rDS ON (MAX) . 0.33Q


    OCR Scan     		FK20UM-6 150ns O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-6 HIGH-SPEED SWITCHING USE FS1 OVS-6 OUTLINE DRAWING Dimensions in mm ♦ •st q w e ■V 6 -H CD Q w r oj q w e r GATE DRAIN SOURCE DRAIN V d s s .300V


    OCR Scan     		O-22QS 57KH23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS20VS-6 HIGH-SPEED SWITCHING USE FS20VS-6 OUTLINE DRAWING I q Dimensions in mm J w e o +i CO Q w r q w e r q o- V d s s .300V rDS ON (MAX) .0.26Í2


    OCR Scan     		FS20VS-6 O-22QS PDF