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IXTI76N25T Abstract: IXTP76N25T IXTQ76N25T 2ZAO0732373 76N25T DIODE 76A t244 Text: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T G Typical avalanche BV = 300V TO-247 IXTH S (TAB) G TO-262 (IXTI) G D S (TAB) D TO-220 (IXTP) Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	PDF	IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T O-247 O-262 O-263 O-220 76N25T IXTP76N25T IXTQ76N25T 2ZAO0732373 DIODE 76A t244

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IXTI76N25T

Abstract: IXTP76N25T IXTQ76N25T 2ZAO0732373 76N25T DIODE 76A t244
Text: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T G Typical avalanche BV = 300V TO-247 IXTH S (TAB) G TO-262 (IXTI) G D S (TAB) D TO-220 (IXTP) Test Conditions VDSS VDGR TJ = 25°C to 150°C

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IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T O-247 O-262 O-263 O-220 76N25T IXTP76N25T IXTQ76N25T 2ZAO0732373 DIODE 76A t244