IXTQ76N25T Search Results

IXTQ76N25T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTQ76N25T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 76A TO-3P		Original	PDF

IXTQ76N25T Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXTI76N25T Abstract: IXTP76N25T IXTQ76N25T 2ZAO0732373 76N25T DIODE 76A t244 Text: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T G Typical avalanche BV = 300V TO-247 IXTH S (TAB) G TO-262 (IXTI) G D S (TAB) D TO-220 (IXTP) Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	PDF	IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T O-247 O-262 O-263 O-220 76N25T IXTP76N25T IXTQ76N25T 2ZAO0732373 DIODE 76A t244
76N2 Abstract: to-247 to-220 to-3p 76N25T IXTP76N25T IXTQ76N25T Text: TrenchTM Power MOSFET N-Channel Enhancement Mode TO-263 AA IXTA VDSS ID25 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T RDS(on) ≤ TO-3P (IXTQ) G G D (Tab) DS G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	O-263 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T O-220AB O-247 76N25T 9-10-A 76N2 to-247 to-220 to-3p IXTP76N25T IXTQ76N25T
Untitled Abstract: No abstract text available Text: TrenchTM Power MOSFET IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T N-Channel Enhancement Mode TO-263 AA IXTA VDSS ID25 RDS(on) ≤ TO-3P (IXTQ) G G D (Tab) DS G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T O-263 O-220AB IXTA76N25T IXTP76N25T
76N25T Abstract: IXTQ76N25T IXTP76N25T 76N25 IXTA76n25t IXTQ76N25 IXTH76N25T IXTQ T76n ixtq76 Text: TrenchTM Power MOSFET N-Channel Enhancement Mode TO-263 AA IXTA VDSS ID25 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T RDS(on) ≤ TO-3P (IXTQ) G G D (Tab) DS G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	O-263 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T O-220AB O-247 IXTA76N25T IXTP76N25T 76N25T IXTQ76N25T 76N25 IXTQ76N25 IXTH76N25T IXTQ T76n ixtq76
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	PDF	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250