Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
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RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25N08 Power MOSFET 25A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25N08 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and superior
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UTT25N08
UTT25N08
QW-R502-749
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 25N20 Power MOSFET 25A, 200V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N20 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and
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25N20
25N20
25N20L-TF3-T
25N20G-TF3-T
25N20L-TF1-T
25N20G-TF1-T
QW-R502-A84
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Untitled
Abstract: No abstract text available
Text: 2SK3535-01 500 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=25A Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 2SK3535-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET
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2SK3535-01
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT25P10
UTT25P10
UTT25P10L-TA3-T
UTT25P10G-TA3-T
UTT25P10L-TN3-T
UTT25P10G-TN3-T
UTT25P10L-TN3-R
UTT25P10G-TN3-R
QW-R502-597
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT25P10
UTT25P10
UTT25P10L-TA3-T
UTT25P10G-TA3-T
UTT25P10L-TN3-T
UTT25P10G-TN3-T
UTT25P10L-Tat
QW-R502-597
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25N06
Abstract: 25N06 MOSFET utc25n06 25N06L 25N06L-TA3-T power mosfet switching 12v switching relay 25n06g d 25n06
Text: UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET 25A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC
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25N06
25N06
QW-R502-450
25N06 MOSFET
utc25n06
25N06L
25N06L-TA3-T
power mosfet switching
12v switching relay
25n06g
d 25n06
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET -25A, -100V, 0.150 Ω, P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT25P10
-100V,
UTT25P10
-100V
UTT25P10L-TA3-T
UTT25P10G-TA3-T
QW-502-597
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Untitled
Abstract: No abstract text available
Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) 0.04 Ω IRFN044 ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1545A
IRFN044
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IRFN044
Abstract: smd diode 44a
Text: PD - 91545A POWER MOSFET SURFACE MOUNT SMD-1 IRFN044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN044 R DS(on) 0.04 Ω ID 44A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1545A
IRFN044
IRFN044
smd diode 44a
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1E14
Abstract: 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 92 /Subject (25A, 100V, 0.070 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 25A, 100V,
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JANSR2N7292
FRF150R4
R2N72
1000K
1E14
2E12
FRF150R4
JANSR2N7292
Rad Hard in Fairchild for MOSFET
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mdd1655
Abstract: MDD165 MDD1655T 0342F
Text: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.
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MDD1655
MDD1655
MDD165
MDD1655T
0342F
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G60N
Abstract: SS31 DIODE DS22062 pspice model TC4423A Tc4421 spice model TC1412 Latch-Up Protection for MOSFET Drivers 439M AN1327 TC1411
Text: AN1327 Avoiding MOSFET Driver Overstress Author: Ray DiSilvestro Microchip Technology Inc. INTRODUCTION This application note describes how to avoid MOSFET driver overstress. MOSFET drivers are used in many applications to drive the high input capacitance of a
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AN1327
dri18
DS01327A-page
G60N
SS31 DIODE
DS22062
pspice model TC4423A
Tc4421 spice model
TC1412
Latch-Up Protection for MOSFET Drivers
439M
AN1327
TC1411
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FCH25N60
Abstract: FCH25N60N mosfet 600V 25A TO247s
Text: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCH25N60N
FCH25N60N
FCH25N60
mosfet 600V 25A
TO247s
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Untitled
Abstract: No abstract text available
Text: AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is for PWM applications. VDS (V) = 30V ID = 25A (VGS = 10V)
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AON6408
AON6408
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FCH25N60N
Abstract: No abstract text available
Text: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCH25N60N
FCH25N60N
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FCP25N60N
Abstract: F102 DIODE 83A mosfet 600V 25A
Text: SupreMOS FCP25N60N_F102 TM tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCP25N60N
F102
DIODE 83A
mosfet 600V 25A
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Untitled
Abstract: No abstract text available
Text: AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is for PWM applications. VDS (V) = 30V ID = 25A (VGS = 10V)
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AON6408
AON6408
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transistor RFP25N05
Abstract: AN7254 AN7260 AN9321 AN9322 RFP25N05 TB334
Text: RFP25N05 Data Sheet January 2002 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features • 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits,
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RFP25N05
RFP25N05
TA09771.
O-220AB
transistor RFP25N05
AN7254
AN7260
AN9321
AN9322
TB334
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FCI25N60N
Abstract: mosfet 600V 25A
Text: SupreMOSTM FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCI25N60N
mosfet 600V 25A
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ISL6364A
Abstract: No abstract text available
Text: Synchronous Rectified Buck MOSFET Drivers ISL6625A Features The ISL6625A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. • Dual MOSFET drives for synchronous rectified bridge
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ISL6625A
ISL6625A
ISL6625A,
5m-1994.
FN7978
ISL6364A
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SW50N06
Abstract: Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent
Text: SAMWIN SW50N06 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better
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SW50N06
023ohm
SW50N06
Samwin* sw50n06
Samwin
samwin sw50n06
CHMC
sw50n
chmc equivalent
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mdd1655
Abstract: No abstract text available
Text: Single N-channel Trench MOSFET 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1655 is suitable device for PWM, Load
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MDD1655
100oC
MDD1655
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