fkp253
Abstract: No abstract text available
Text: N-Channel MOS FET FKP253 June, 2007 Features Package-FM20 TO220 Full Mold Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings
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FKP253
Package---FM20
T02-009EA-070531
fkp253
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Untitled
Abstract: No abstract text available
Text: MOS FET SKP253 December 2005 Package-TO-263 Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed Applications • PDP driving • High speed switching Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings
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SKP253
Package---TO-263
T02-004EA-051124
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omron p7tf-OS16-1
Abstract: P7TF-OS16 omron relay omron G7T-1112S relay 24v omron omron p7tf G7TC-OC16 G7TC-IA16-5 omron relay module 24 dc G79-A200C
Text: R Relay I/O Blocks G7jj Consolidate Wiring and Reduce Installation Time H Omron relay I/O blocks provide high performance switching used with controllers from any manufacturer H G7TC blocks come with G7T input or output relays installed 16-point models measure 180 W x 85 H x 68 D mm
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16-point
10-amp)
G79-Y100C
G79-Y150C
G79-Y200C
G79-Y300C
G79-Y500C
G79-A200C
G79-A500C
omron p7tf-OS16-1
P7TF-OS16
omron relay
omron G7T-1112S
relay 24v omron
omron p7tf
G7TC-OC16
G7TC-IA16-5
omron relay module 24 dc
G79-A200C
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Untitled
Abstract: No abstract text available
Text: MOS FET SKP253 December 2005 •Package-TO-263 ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings
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SKP253
Package---TO-263
PW100s,
T02-004EA-051124
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SKP253
Abstract: 051124 mos fet 120v 10A sanken power transistor B105 CF35
Text: MOS FET SKP253 December 2005 •Package-TO-263 ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings
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SKP253
Package---TO-263
T02-004EA-051124
SKP253
051124
mos fet 120v 10A
sanken power transistor
B105
CF35
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Package-FM20
Abstract: fkp*253 FKP253 fet t02
Text: N-Channel MOS FET FKP253 •Features June, 2007 ■Package-FM20 TO220 Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1)
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FKP253
Package---FM20
PW100sduty
740HILp
T02-009EA-070531
Package-FM20
fkp*253
FKP253
fet t02
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FKP253
Abstract: Package-FM20 mos n fet e sanken power transistor B105 CF35 FM20 DC switching 60V 10A FET
Text: N-Channel MOS FET FKP253 •Features June, 2007 ■Package-FM20 TO220 Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1)
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FKP253
Package---FM20
T02-009EA-070531
FKP253
Package-FM20
mos n fet e
sanken power transistor
B105
CF35
FM20
DC switching 60V 10A FET
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Untitled
Abstract: No abstract text available
Text: MOS FET SKP253 December 2005 •Package-TO-263 ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings
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SKP253
Package---TO-263
PW100s,
T02-004EA-051124
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mos fet 120v 10A
Abstract: No abstract text available
Text: 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3513-01L
mos fet 120v 10A
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AN1001
Abstract: EIA-541 F7101 IRF7101 MS-012AA
Text: PD - 95349A IRF7494PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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5349A
IRF7494PbF
AN1001)
AN1001
EIA-541
F7101
IRF7101
MS-012AA
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AN1001
Abstract: EIA-541 F7101 IRF7101 MS-012AA
Text: PD - 95349 IRF7494PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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IRF7494PbF
AN1001)
AN1001
EIA-541
F7101
IRF7101
MS-012AA
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IRF7494
Abstract: IRF AN1001 AN1001 EIA-541 F7101 IRF7101 MS-012AA
Text: PD - 94641A IRF7494 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max 44m:@VGS = 10V 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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4641A
IRF7494
AN1001)
IRF7494
IRF AN1001
AN1001
EIA-541
F7101
IRF7101
MS-012AA
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Untitled
Abstract: No abstract text available
Text: PD-95274 IRF7465PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See
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PD-95274
IRF7465PbF
AN1001)
EIA-481
EIA-541.
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AN1001
Abstract: EIA-541 F7101 IRF7101
Text: PD-95274 IRF7465PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See
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PD-95274
IRF7465PbF
AN1001)
EIA-481
EIA-541.
AN1001
EIA-541
F7101
IRF7101
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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Untitled
Abstract: No abstract text available
Text: 2SK3688-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3688-01L
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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uc3854 3kw pfc
Abstract: uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854
Text: APPLICATION NOTE APT9901 By: Kenneth Dierberger Denis Grafham OPTIMIZING THE DESIGN OF 3.5kW SINGLE-MOSFET POWER FACTOR CORRECTORS 1 APT9901 Optimizing The Design of 3.5kW Single-MOSFET Power Factor Correctors Kenneth Dierberger, Technical Marketing Manager
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APT9901
B-1330
uc3854 3kw pfc
uc3854 Application Note
Power Factor Correction With the UC3854
2kw pfc
uc3854 3kw
PFC 3kw
APT9901
UNITRODE Claudio de Sa e Silva
3.5kw pfc
3kw uc3854
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uc3854 3kw pfc
Abstract: UNITRODE Claudio de Sa e Silva PFC 3kw Power Factor Correction with the UC3854 2kw pfc sc265 triac 2kw uc3854 3kw uc3854 UC3854 for PFC 3.5kw 3.5kw pfc
Text: APT9901 By Kenneth Dierberger and Denis Grafham OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS Kenneth Dierberger, Manager Technical Marketing, Advanced PowerTechnology, 405 S.W. Columbia St., Bend, OR 97702, USA
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APT9901
B-1330
UC3854"
NH03054.
D-90471
UC1854/UC2854/UC3854
pp171-177,
D90471N
uc3854 3kw pfc
UNITRODE Claudio de Sa e Silva
PFC 3kw
Power Factor Correction with the UC3854
2kw pfc
sc265 triac
2kw uc3854
3kw uc3854
UC3854 for PFC 3.5kw
3.5kw pfc
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
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2am smd transistor
Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Text: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels
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SI-5155S
O-220
Rati03S
SPX-62S
SI-3011S
SPX-G32S
SI-3101S
SPZ-G36
SI-3102S
SSB-14
2am smd transistor
transistor smd 4z
HALL SENSOR A 22L
78Mos
EL 14v 4c
78 MOS
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
smd transistor marking 12W
TRANSISTOR SMD MARKING CODE 1P
TRANSISTOR SMD MARK CODE 7a
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MP6101
Abstract: n channel fet array
Text: MP6101 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE 7T-MOS FET 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS MOTOR DRIVE APPLICATIONS. •Pack a g e w i t h Heat Sink Isolated Lead. . H i g h D rain P o wer Dissipation. : P T =120W
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MP6101
300yA
Ta-25
Drain940
100/i
MP6101
n channel fet array
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MP4403 TOSHIBA POWER M05 FET MODULE SILICON N CHANNEL MOS TYPE L2-tt-MOSIV 4 IN 1 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. • 4-Volt Gate Drive Available
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MP4403
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hitachi mosfet power amplifier audio application
Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3
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RE79-24
hitachi mosfet power amplifier audio application
2SK215 equivalent
PM4550C
2sd667 2sb647
2SD667 equivalent
2SJ99
K429
HITACHI 2SJ56
k399
Hitachi 2sk176 2sj56
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