ati rage
Abstract: ATI Rage jumper
Text: EPM-VID-3 PC/104-Plus Video Expansion Module • ATi Rage Mobility video chip • 8 MB video RAM LVDS, CRT and TV out 16.7 Million displayable colors PC/104-Plus form factor Highlights ATi Rage Mobility Video Chip M1 graphic accelerator provides outstanding performance.
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PC/104-Plus
24-bit
18-bit
PC/104-Plus,
10-pin
CBR-1201.
12-pin
15-pin
ati rage
ATI Rage jumper
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celsius h230
Abstract: seimens notebook ATI Technologies graphics H230 V3100 V5000 Danny Mousses ATI 128
Text: Mobile Workstations ATI Mobility FireGL workstation graphics technology delivers • Industry leading price performance based on a scalable parallel processing architecture • Unified drivers for both mobile and desktop workstations • Optimized and certified for
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amd SB600
Abstract: ATI SB460 SB460 ATI SB600 Athlon 64 X2 "high precision event timer" amd SB460 turion 64 x2 pin diagram amd athlon II x2 pin diagram AMD Athlon 64 X2
Text: AMD SB600 BIOS Developer’s Guide Public Version Technical Reference Manual Rev. 3.00 P/N: 46157_sb600_bdg_pub_3.00 2008 Advanced Micro Devices, Inc. Trademarks AMD, the AMD Arrow, ATI, the ATI logo, Radeon, Mobility Radeon, AMD Athlon, Sempron, Turion and
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SB600
01c71E33h
01c71F99h
01d71C00h
01d71D10h
01d71E7fh
01d71F90h
01e71C50h
01e71D00h
01e71E44h
amd SB600
ATI SB460
SB460
ATI SB600
Athlon 64 X2
"high precision event timer"
amd SB460
turion 64 x2 pin diagram
amd athlon II x2
pin diagram AMD Athlon 64 X2
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RS690M
Abstract: radeon 7500 RS690 radeon igp 1012 RS690MC ATI RS690 graphics card AMD Radeon HIS RX 480 ATI Mobility Radeon g3d0 Northbridge
Text: AMD RS690 ASIC Family Register Reference Guide Technical Reference Manual Rev. 3.00o P/N: 43372_rs690_rrg_3.00o 2007 Advanced Micro Devices, Inc. Trademarks AMD, the AMD Arrow logo, AMD Athlon, ATI, Mobility, PowerPlay, CrossFire, Radeon, and combinations thereof, are trademarks of Advanced Micro Devices, Inc.
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RS690
GRA07
GRA08
SEQ00
SEQ01
SEQ02
SEQ03
SEQ04
RS690M
radeon 7500
radeon igp 1012
RS690MC
ATI RS690
graphics card AMD Radeon HIS RX 480
ATI Mobility Radeon
g3d0
Northbridge
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pseudomorphic HEMT
Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm
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FPD6836SOT343
FPD6836SOT3
OT343
FPD6836SOT343
mx750
1850MHz)
18dBm
2002/95/EC)
FPD6836SOT343E
FPD6836SOT343E-AG
pseudomorphic HEMT
TRANSISTOR c 5578 B
TRANSISTOR BC 135
0604HQ
OT343
3.5GHz BJT
bc 548 transistor
transistor bc 731
transistor bc 564
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Transistor AC 51 0865 75 730
Abstract: No abstract text available
Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm
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FPD1500SOT89CE
FPD1500SOT8
FPD1500SOT89CE
25Pmx1500Pm
FPD1500SOT89CESQ
FPD1500SOT89CESR
FPD1500SOT89PCK
85GHz
DS130523
Transistor AC 51 0865 75 730
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LA852
Abstract: compal MAX7082 S1-A13 Compal Electronics pir schematic E15-E20 KBA18 md-3013 u2403
Text: COMPAL CONFIDENTIAL MODEL PCI / ISA PULL UP/DOWN RESISTERS PAGE 13 SODIMM -BANK 2,3 ON BOARD 32/64MB -BANK 0 443ZX-100M VGA ATI Mobility P PIRQA# PAGE 12 PSB PAGE 17 PAGE 16 ICS9248-92 PAGE 2,3 LCD & CRT SGRAM CLOCK Celeron uBGA2/uPGA2 CPU NAME : 888F1 LA852
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888F1
LA852
ICS9248-92
443ZX-100M
32/64MB
LA-852
LA852
compal
MAX7082
S1-A13
Compal Electronics
pir schematic
E15-E20
KBA18
md-3013
u2403
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FPD1500SOT89E
Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
Text: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm
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FPD1500SOT89E
FPD1500SOT8
FPD1500SOT89E
25mx1500m
FPD1500SOT89E:
FPD1500SOT89PCK
FPD1500SOT89ESQ
FPD1500SOT89ESR
est 0114
FPD1500SOT89
MIL-HDBK-263
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FPD1500SOT89CE
Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m
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FPD1500SOT8
FPD1500SOT89CE
FPD1500SOT89CE
mx1500
42dBm
FPD1500SOT89CE:
FPD1500SOT89CESQ
FPD1500SOT89CESR
FPD1500SOT89PCK
4506 gh
Transistor BJT 547 b
1850G
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Transistor AC 51 0865 75 834
Abstract: No abstract text available
Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m
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FPD1500SOT89CE
FPD1500SOT8
FPD1500SOT89CE
mx1500ï
FPD1500SOT89CESR
FPD1500SOT89PCK
FPD1500SOT89CESQ
85GHz
DS111103
Transistor AC 51 0865 75 834
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888F2
Abstract: compal LA854 LM722 PR111 Compal Electronics u12c c526 MD149 1420R MD2810
Text: COMPAL CONFIDENTIAL MODEL REV:0.1 PCI / ISA PULL UP/DOWN RESISTERS PAGE 13 SODIMM -BANK 2,3 ON BOARD 32/64MB -BANK 0 443ZX-100M VGA ATI Mobility P PIRQA# PAGE 12 PSB PAGE 17 PAGE 16 ICS9248-92 PAGE 2,3 LCD & CRT SGRAM CLOCK Celeron uBGA2/uPGA2 CPU NAME : 888F2 LA854
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888F2
LA854
ICS9248-92
443ZX-100M
32/64MB
PR111
PR112
LA-854
compal
LA854
LM722
Compal Electronics
u12c c526
MD149
1420R
MD2810
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FPD1500SOT89CESR
Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD1500SOT89
FPD1500SOT8
FPD1500SOT89
25mx1500m
42dBm
FPD1500SOT89E:
FPD1500SOT89E
FPD1500SOT89CE
EB1500SOT89CE-BC
FPD1500SOT89CESR
FPD1500SOT89E
MIL-HDBK-263
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FPD1500SOT89
Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD1500SOT89
FPD1500SOT8
FPD1500SOT89
25mx1500m
42dBm
FPD1500SOT89E:
FPD1500SOT89CESR
FPD1500SOT89CESQ
FPD1500SOT89CESB
DS090612
FPD1500SOT89E
MIL-HDBK-263
FPD1500SOT89CE
4506 gh
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RS780M
Abstract: RS780MC RX781 RS780E AMD RS780 790GX M780G RS780 ATI rs780 RS880
Text: AMD 780G Family Register Programming Requirements For the RS780, RS780C, RS780D, RS780M, RS780E, RS780MC, and RX781 Technical Reference Manual Rev. 1.01 P/N: 43291_rs780_rpr_pub_1.01 2009 Advanced Micro Devices, Inc. Trademarks AMD, the AMD Arrow logo, AMD Athlon, ATI, Mobility, PowerPlay, CrossFire, Radeon, and combinations thereof, are trademarks of Advanced Micro Devices, Inc.
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RS780,
RS780C,
RS780D,
RS780M,
RS780E,
RS780MC,
RX781
RS780
RS780M
RS780MC
RX781
RS780E
AMD RS780
790GX
M780G
ATI rs780
RS880
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RS780M
Abstract: RS780MC RX781 RS780 RS780E M780G ATI rs780 amd ati radeon 1011 AMD 780V RS780C
Text: AMD 780G Family BIOS Developer’s Guide For the RS780, RS780C, RS780D, RS780M, RS780E, RS780MC, and RX781 Technical Reference Manual Rev. 1.01 P/N: 43734_rs780_bdg_pub_1.01 2009 Advanced Micro Devices, Inc. Trademarks AMD, the AMD Arrow logo, AMD Athlon, ATI, Mobility, PowerPlay, CrossFire, Radeon, and combinations thereof, are trademarks of Advanced Micro Devices, Inc.
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RS780,
RS780C,
RS780D,
RS780M,
RS780E,
RS780MC,
RX781
RS780M
RS780MC
RX781
RS780
RS780E
M780G
ATI rs780
amd ati radeon 1011
AMD 780V
RS780C
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FPD200P70
Abstract: No abstract text available
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
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fpd200p70
Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
w65 transistor
FPD200P70SR
TL11
TL22
"IPC 1752" gold
8GH transistor
L30 type RF microwave power transistor
FPD200P70SB
3400 transistor
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Untitled
Abstract: No abstract text available
Text: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth
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Untitled
Abstract: No abstract text available
Text: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth
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transistor NEC D 586
Abstract: NEC D 586
Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility
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NE321000,
NE29200
NE321000
NE29200
NE321000
P14270E
transistor NEC D 586
NEC D 586
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208H
Abstract: No abstract text available
Text: 1. M echanical D im ensions 2. Sch em atic: o-2T o- 3. E lectrical Specs: DCR: tbd Ohms Max Impedance: 510 Ohms Typ @25MHz 580 Ohms Typ 100MHz Notes: 1. Solderablllty: Leads shall meet M IL-STD -202G , Method 208H for solderability. 2. Flam mobility; U L94V-0
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25MHz
100MHz
MIL-STD-202G,
UL94V-0
E151556
XFEB20023â
208H
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
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NE4210S01
NE4210S01
NE4210S01-T1
NE4210onditions.
IR30-00-1
14232E
0DS00
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AM/SSC 9500 ic data
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET IV IF f " / h ETERO JUNCTION FIELD EFFECT TRANSISTOR / NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
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NE428M01
NE428M01
200//m
AM/SSC 9500 ic data
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Untitled
Abstract: No abstract text available
Text: 1. Mechanical Dimensions: 2 . Schem atic: 3. Electrical Specifications: OCL: 100 uH ± 1 0 % @ 1.0KH z 1.0V DCR: 0 .4 9 0 Ohm s Max. IDC: 0.55 A Max. SRF: 8MHz Typ Notes: 1. Sol durability: Leads shall meet M IL-STD -202, Method 208D for solderability. Z. Flam mobility: U L94V-0
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MIL-STD-202,
UL94V-0
XFSDR74SH
XFSDR74SHâ
Apr-05-01
Apr-05-01F
Apr-05-01
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