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    MOBILITY Search Results

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    9UMS9633BKLFT Renesas Electronics Corporation Ultra Mobile PC/Mobile Internet Device Visit Renesas Electronics Corporation
    9UMS9633BKLF Renesas Electronics Corporation Ultra Mobile PC/Mobile Internet Device Visit Renesas Electronics Corporation
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    MOBILITY Price and Stock

    congatec AG conga-Qseven Mobility Kit

    Development Boards & Kits - x86 QSEVEN STARTER KIT FOR MOBILE APPS
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    Mouser Electronics conga-Qseven Mobility Kit
    • 1 $2879.37
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    Phoenix Contact MOBILE BACKPACK

    Transport rucksack for the THERMOMARK PRIME including accessories - marking material - and consumables - unequipped
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    Onlinecomponents.com MOBILE BACKPACK
    • 1 $157.06
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    Phoenix Contact TC ANT MOBILE/GPS

    Combined mobile phone GPS antenna with omnidirectional characteristic - 2 m antenna cable with SMA round plug (GSM/UMTS) and R-SMA round plug (GPS)
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    Onlinecomponents.com TC ANT MOBILE/GPS
    • 1 $264.25
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    Phoenix Contact TC ANT MOBILE WALL 5M

    Multiband cellular antenna with mounting bracket for outdoor installation - 5 m antenna cable with SMA circular connector - suitable for LTE/4G
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    Onlinecomponents.com TC ANT MOBILE WALL 5M 6
    • 1 $122.27
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    Phoenix Contact TC ANT MOBILE WALL 0 5M

    Multiband cellular antenna for wall mounting - 0.5 m antenna cable - with SMA circular connector - suitable for LTE/4G
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    Onlinecomponents.com TC ANT MOBILE WALL 0 5M 3
    • 1 $176.47
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    MOBILITY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3d scanner

    Abstract: scanner 3d automatic room light control TX5 transmitter
    Text: DATASHEET Key Features Trimble tx5 scanner The Trimble TX5 3D laser scanner is a revolutionary and highly versatile 3D scanning solution for a broad variety of scanning applications. The compact and lightweight design provides unmatched mobility at the job site, increasing field productivity. The intuitive and easy to use


    Original     		PDF

    GD-30

    Abstract: InGaAs HEMT mitsubishi
    Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.


    Original     		PDF May/2008 MGF4934AM/BM MGF4934BM 12GHz GD-30 InGaAs HEMT mitsubishi

    GD-30

    Abstract: MGF4931AM 77153
    Text: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF May/2007 MGF4931AM MGF4931AM 12GHz GD-30 77153

    GD-30

    Abstract: No abstract text available
    Text: Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934CM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934CM MGF4934CM 12GHz GD-30

    pseudomorphic HEMT

    Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
    Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm


    Original     		PDF FPD6836SOT343 FPD6836SOT3 OT343 FPD6836SOT343 mx750 1850MHz) 18dBm 2002/95/EC) FPD6836SOT343E FPD6836SOT343E-AG pseudomorphic HEMT TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564

    Fingerprint recognition based on silicon chips

    Abstract: cellphone mobile hardware integration PCMCIA SRAM Card AC97 200MIPS gipsy
    Text: STA2000 Mobile Multimedia Platform A highly integrated ARM-based solution for Mobility and Connectivity Mobile Multimedia Platform Chip Targets Next Generation Convergence Products High integration and low consumption make STA2000 System-on-Chip ideal for mobile terminals


    Original     		PDF STA2000 STA2000 16kbytes 16-bit 200MHz 10-channel 256Mbytes 256Mbytes Fingerprint recognition based on silicon chips cellphone mobile hardware integration PCMCIA SRAM Card AC97 200MIPS gipsy

    FPD750SOT89

    Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
    Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD750SOT89 25dBm 39dBm FPD750SOT89 25mx1500m FPD750SOT89E: FPD750SOT89CE-BC FPD750SOT89CE-BE FPD750SOT89CE-BG BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E

    0603 footprint IPC

    Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
    Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD3000SOT89 FPD3000SOT8 30dBm 45dBm FPD3000SOT89 25mx1500m FPD3000SOT89E: FPD3000SOT89CE-BD FPD3000SOT89CE-BE FPD3000SOT89CE-BG 0603 footprint IPC FPD3000 TRANSISTOR BC 157 FPD3000SOT89E

    FPD1500

    Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
    Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		PDF FPD1500DFN FPD1500DFN mx750 27dBm 85GHz 42dBm 85GHz) EB1500DFN-BA FPD1500 SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE

    MGF4919G

    Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically


    Original     		PDF MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G gD 679 transistor L to Ku band amplifiers GS 1223

    K 1358 fet transistor

    Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.


    Original     		PDF MGFC4419G MGFC4419G 12GHz K 1358 fet transistor FET K 1358 C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581

    EPC2001

    Abstract: EPC Gan transistor FX-93 FET MARKING QG
    Text: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		PDF EPC2001 EPC2001 EPC Gan transistor FX-93 FET MARKING QG

    GD-30

    Abstract: MGF4934AM
    Text: July/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF July/2007 MGF4934AM MGF4934AM 12GHz GD-30

    pcga-bp71

    Abstract: UMS1 S400
    Text: PCG-F560 Sony VAIO All-in-One Notebook MAX Screen: MAX Battery: MAX Mobility: 14.1" XGA TFT 2X battery life* 6.8 lbs.* light, 1.8" thin PLUS: • All-in-one design • i.LINK® IEEE 1394 interface SPECIFICATIONS FEATURES ® ® 1 • Intel Pentium III processor 600 MHz


    Original     		PDF PCG-F560 pcga-bp71 UMS1 S400

    eudyna GaAs FET RF Transistor

    Abstract: No abstract text available
    Text: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor


    Original     		PDF FHX13X, FHX14X 12GHz FHX13) 12GHz FHX14X 2-18GHz eudyna GaAs FET RF Transistor

    b32655

    Abstract: B25655J4507K FS400R07 B25655P4907K000 B25655J4507K005 B25655J4307K FS800R07 B25655P4307K001 B25655P4507K001 FS600R07
    Text: EPCOS Product Brief 2013 Film Capacitors PCC Power Capacitor Chip for 650-VR Semiconductor Modules in e-Mobility Applications www.epcos.com Technology Film assembly 1 Metal-end spray layer 2) Free margin 3) Metallization, flat or CSP w. / wo. structuring


    Original     		PDF 650-VR b32655 B25655J4507K FS400R07 B25655P4907K000 B25655J4507K005 B25655J4307K FS800R07 B25655P4307K001 B25655P4507K001 FS600R07

    FHX04X

    Abstract: FHX04 FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
    Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility


    Original     		PDF FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04X FHX04 FHX05X GaAs FET HEMT Chips hemt low noise die

    Untitled

    Abstract: No abstract text available
    Text: PI6UMC10802 Ultra Mobility, Clipped Sinewave, Clock Buffer with 2 Outputs Features Description ÎÎDual Analog Voltage Clipped Sinewave Buffer The PI6UMC10802 is a small footprint, low power, clipped sinewave buffer with 2 outputs designed to address mobile clock


    Original     		PDF PI6UMC10802 26MHz -50dBc -15dBc -20dBc PS9021A

    CFS0303-SB-0G0T

    Abstract: TRANSISTOR BD 137-10 PB-CFS0303-SB-00B0 transistor 2440 bd 9473
    Text: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package May 2006 - Rev 23-May-06 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA


    Original     		PDF 23-May-06 CFS0303-SB OT-343) 2400MHz 3500MHz CFS0303-SB-0G0T TRANSISTOR BD 137-10 PB-CFS0303-SB-00B0 transistor 2440 bd 9473

    Broadcom FASTPATH switching software

    Abstract: Broadcom WLAN 802.11n Broadcom switch cli Broadcom WLAN broadcom 802.11n fastpath IEEE 802.11 interference FASTPATH-SB101-R
    Text: FASTPATH UWS/UAP Production-Ready Mobility for Enterprise OEMs BUILT ON A SOLID FOUNDATION current FASTPATH software modules for Broadcom’s FASTPATH ® software enables switching, routing, multicast, and more. original equipment manufacturers OEMs to


    Original     		PDF FASTPATH-SB101-R Broadcom FASTPATH switching software Broadcom WLAN 802.11n Broadcom switch cli Broadcom WLAN broadcom 802.11n fastpath IEEE 802.11 interference

    Untitled

    Abstract: No abstract text available
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


    Original     		PDF FHX45X 12GHz FHX45X 2-18GHz

    Untitled

    Abstract: No abstract text available
    Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.


    Original     		PDF

    nec 151

    Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.


    OCR Scan     		PDF NE32900 NE32900 nec 151 transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor

    MGF4919

    Abstract: MGF4919G
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The


    OCR Scan     		PDF MGF491xG MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G MGF4919