BF242
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C C B E TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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Original
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2N5551
MMBT5551
2N5551
OT-23
OT-23
BF242
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PDF
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2N5551B
Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
2N5551YIUBU
2N5551YTA
2N5551TA
2N5551CBU
2N5551IUTA
2N5551B
2n5551yc
sot-23 marking NE
2N5551BU
2N5551Y
5551n
transistor marking code ne SOT-23
2n5551c-y
2N5551YBU
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PDF
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2n5551
Abstract: 2N5551 SOT23 MMBT5551
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
2N5551 SOT23
MMBT5551
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PDF
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2N5551
Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
BF242
CBVK741B019
F63TNR
MMBT5551
PN2222N
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PDF
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MMBT5550
Abstract: MMBT5551 MMBT5401
Text: MMBT5551 MMBT5551 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2007-11-09 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1
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Original
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MMBT5551
OT-23
O-236)
UL94V-0
MMBT5401
MMBT5550
MMBT5551
MMBT5401
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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Original
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2N5551
MMBT5551
2N5551
OT-23
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PDF
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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Original
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2N5551
MMBT5551
2N5551
OT-23
CBVK741B019
F63TNR
MMBT5551
PN2222N
transistor 2n5551
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PDF
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2n5551
Abstract: 2N5551 SOT23
Text: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1
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Original
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2N5551
MMBT5551
2N5551
OT-23
2N5551TA
2N5551TFR
2N5551TF
2N5551BU
2N5551 SOT23
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PDF
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
CBVK741B019
F63TNR
MMBT5551
PN2222N
2N5551 SOT-23
BF242
CJE SOT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT5550 / MMBT5551 MMBT5550 / MMBT5551 Surface Mount General Purpose Si-Epitaxial Planar Transistors Vielzweck Si-Epitaxial-Planar-Transistoren für die Oberflächenmontage NPN NPN Version 2006-05-09 1.1 2.9 ±0.1 0.4 Type Code 1 1.3±0.1 2.5 max 3 2 1.9
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Original
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MMBT5550
MMBT5551
OT-23
O-236)
UL94V-0
MMBT5550
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PDF
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FMBM5551
Abstract: MMBT5551
Text: FMBM5551 NPN General Purpose Amplifier • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings * Symbol Parameter Value
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Original
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FMBM5551
MMBT5551
FMBM5551
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data
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Original
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MMBT5551
MMBT5401)
OT-23
OT-23,
MIL-STD-202,
100MHz
DS30061
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PDF
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FMBM5551
Abstract: MMBT5551
Text: FMBM5551 NPN General Purpose Amplifier • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings * Value Units VCEO Symbol
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Original
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FMBM5551
MMBT5551
FMBM5551
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 -H : h“ A TO P VIEW Mechanical Data_
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OCR Scan
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MMBT5551
MMBT5401)
OT-23
OT-23,
MIL-STD-202,
200nA,
300ns,
DS30061
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PDF
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|
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2N5551
Abstract: MMBT5551
Text: MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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MMBT5551
2N5551
OT-23
2N5551
MMBT5551
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PDF
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2N5551
Abstract: MMBT5551 2N5551C
Text: MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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MMBT5551
2N5551
OT-23
2N5551
MMBT5551
2N5551C
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PDF
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FMBM5551
Abstract: MMBT5551
Text: FMBM5551 NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package Features • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings *
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Original
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FMBM5551
MMBT5551
FMBM5551
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PDF
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data
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Original
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MMBT5551
MMBT5401)
OT-23
OT-23,
MIL-STD-202,
100MHz
DS30061
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S g M iS D r o U C roR :w 2N5551 MMBT5551 Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum RatinQS TA = 25°C unless otherwise noted
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OCR Scan
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2N5551
MMBT5551
2N5551
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PDF
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Marking Code 2F
Abstract: 250-600
Text: ilAIEC Dffi SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - TO-236 PACKAGE Type Number MMBT2222A IMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 CEO Marking Code 1P 1N 2X 1H 1G 3S 1D 40 40 40 60 80 160 300 1 ' c b o VCB h FE ® 100-300 100-300 100-300
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OCR Scan
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MMBT2222A
IMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
O-236
40min.
Marking Code 2F
250-600
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PDF
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FMB5551
Abstract: MMBT5551 1MA160
Text: FMB5551 FMB5551 C2 NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package E1 C1 • This device is designed for general purpose high voltage amplifiers and gas discharge display driving. • Sourced from process 16. • See MMBT5551 for characteristics.
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Original
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FMB5551
MMBT5551
FMB5551
1MA160
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PDF
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2N5551
Abstract: MMBT5551
Text: N MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
|
MMBT5551
2N5551
OT-23
2N5551
MMBT5551
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available M M B T5401 Ideal for Medium Power Amplification and Switching SOT-23 -H : h“ A TO P VIEW Mechanical Data_ Case: SO T-23, Molded Plastic
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OCR Scan
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MMBT5551
T5401)
OT-23
IL-STD-202,
200nA,
300ns,
DS30061
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PDF
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MMBT5401
Abstract: MMBT5551
Text: MMBT5551 v is H A Y NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available M M B T5401 Ideal for Medium Power Amplification and Switching SOT-23 -H
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OCR Scan
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MMBT5551
MMBT5401)
OT-23,
MIL-STD-202,
OT-23
MMBT5401
100MHz
200nA,
300ns,
DS30061
MMBT5551
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PDF
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