NAND04
Abstract: A15-A23
Text: NAND04GW3C2B NAND08GW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multiplane architecture, MLC NAND flash memories Preliminary Data Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area
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NAND04GW3C2B
NAND08GW3C2B
2112-byte
NAND04
A15-A23
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sense amplifier bitline memory device
Abstract: VP12 Intel StrataFlash Memory double data rate Reliability VP12 "vlsi technology" abstract for basic vlsi with intel
Text: Intel StrataFlashTM Memory Technology Development and Implementation Al Fazio, Flash Technology Development and Manufacturing, Santa Clara, CA. Intel Corp. Mark Bauer, Memory Components Division, Folsom, CA. Intel Corp. Index words: StrataFlash, MLC, flash, memory.
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CMD4D11-4R7M
Abstract: DIODE GOC 24 LCD Panel Display Signal Theory ADP3041 ADP3041ARU ADP3041ARUZ CR43-100 CR43-4R7 DS1608-472 TSSOP-20
Text: TFT LCD Panel Power Module ADP3041 FEATURES 600 kHz PWM Frequency Fully Integrated 1.5 A Power Switch 3% Output Regulation Accuracy Simple Compensation Small Inductor and MLC Capacitors 300 A Quiescent Supply Current 90% Efficiency Undervoltage Lockout
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ADP3041
20-Lead
ADP3041
10/02--Data
C03361
CMD4D11-4R7M
DIODE GOC 24
LCD Panel Display Signal Theory
ADP3041ARU
ADP3041ARUZ
CR43-100
CR43-4R7
DS1608-472
TSSOP-20
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Gan transistor
Abstract: NEW TRANSISTOR
Text: DLI The Global Leader In High Frequency Solutions dilabs.com Low loss resonance free performance in an MLC Structure C18 Broadband Blocks Functional Applications: n DC Blocking, High Isolation Decoupling, RF/Microwave Modules, Instruments and Test Equipment.
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C18BL103X-4UN-X0B
000pF
Gan transistor
NEW TRANSISTOR
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6647a
Abstract: 2082-2700-00 560-7A50 attenuator 3dB DC 18GHz wiltron 6647A Microwave Generator SWR BRIDGE metal detector vlf HP-85
Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line
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Untitled
Abstract: No abstract text available
Text: TFT LCD Panel Power Module ADP3041 FEATURES 600 kHz PWM Frequency Fully Integrated 1.5 A Power Switch 3% Output Regulation Accuracy Simple Compensation Small Inductor and MLC Capacitors 300 A Quiescent Supply Current 90% Efficiency Undervoltage Lockout
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ADP3041
20-Lead
ADP3041
C03361â
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NAND04GW3C2A
Abstract: NAND04GA3C2A TSOP48 outline JESD97 Wear Leveling in Single Level Cell NAND Flash Memory
Text: NAND04GA3C2A NAND04GW3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory Features • High density multi-level Cell MLC NAND Flash memories: – Up to 128 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND interface
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NAND04GA3C2A
NAND04GW3C2A
TSOP48
NAND04GW3C2A
NAND04GA3C2A
TSOP48 outline
JESD97
Wear Leveling in Single Level Cell NAND Flash Memory
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560-7A50
Abstract: 6647a Shielded Microstrip uhf microwave fet 2082-2700-00 7082 coil gold detector decibel meter Logarithmic Amplifier detector 18GHz series and parallel resonance
Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line
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package tsop48
Abstract: LGA52 ai12472 nand flash lga NAND08GW3C2B LGA-52 NAND0
Text: NAND08GW3C2B 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 8 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage applications
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NAND08GW3C2B
2112-byte
TSOP48
LGA52
package tsop48
ai12472
nand flash lga
NAND08GW3C2B
LGA-52
NAND0
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DIODE GOC 24
Abstract: ADP3041 ADP3041ARU CMD4D11-4R7M CR43-100 CR43-4R7 DS1608-103 DS1608-472 TSSOP-20 diode goc 11
Text: TFT LCD Panel Power Module ADP3041 FEATURES 600 kHz PWM Frequency Fully Integrated 1.5 A Power Switch 3% Output Regulation Accuracy Simple Compensation TSSOP 20-Lead Package Small Inductor and MLC Capacitors 300 A Quiescent Supply Current 90% Efficiency
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ADP3041
20-Lead
ADP3041
10/02--Data
C03361
DIODE GOC 24
ADP3041ARU
CMD4D11-4R7M
CR43-100
CR43-4R7
DS1608-103
DS1608-472
TSSOP-20
diode goc 11
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NUMONYX DDR
Abstract: NAND16GW3D2B
Text: NAND16GW3D2B 16-Gbit, 4320-byte page, 3 V supply, multiplane architecture, multilevel cell NAND flash memory Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage applications
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NAND16GW3D2B
16-Gbit,
4320-byte
NUMONYX DDR
NAND16GW3D2B
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6647a
Abstract: uhf microwave fet 560-7A50 Logarithmic Amplifier detector 18GHz metal detector vlf 2082-2700-00 2082-2700 7082 coil gold detector decibel meter
Text: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line
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NAND16GW3D2A
Abstract: NAND32GW3D4A NAND08GW3D2A
Text: NAND08GW3D2A NAND16GW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area
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NAND08GW3D2A
NAND16GW3D2A
16-Gbit,
4224-byte
16-Gbi"
NAND16GW3D2A
NAND32GW3D4A
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NAND08GW3D2A
Abstract: No abstract text available
Text: NAND08GW3D2A 8-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8 Gbits of memory array – 256 Mbits of spare area – Cost-effective solutions for mass storage
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NAND08GW3D2A
4224-byte
NAND08GW3D2A
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5m201
Abstract: LICC kyocera 1997 Licc avx 0612 1997 Signal Path Designer PDS decoupling capacitor
Text: TECHNICAL INFORMATION Introduction to Choosing MLC Capacitors For Bypass/Decoupling Applications Yun Chase AVX Corporation 801 17th Avenue South Myrtle Beach, SC 29577 Abstract: Methods to ensure signal integrity using decoupling capacitors have been the topic of many papers in the past as well as in the
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Corpora539-1501
5M201-N
5m201
LICC kyocera 1997
Licc avx 0612 1997
Signal Path Designer
PDS decoupling capacitor
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NAND16GW3D2A
Abstract: C5761 2112B
Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3D2A
16-Gbit,
4224-byte
NAND16GW3D2A
C5761
2112B
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LGA52
Abstract: 4GW3 NAND08GW3C2B 2112B LGA-52 NAND04GW3C
Text: NANDxxGW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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2112-byte
TSOP48
LGA52
128yx
4GW3
NAND08GW3C2B
2112B
LGA-52
NAND04GW3C
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LICC avx 1999
Abstract: Using Decoupling Capacitors Signal Path Designer
Text: TECHNICAL INFORMATION Introduction to Choosing MLC Capacitors For Bypass/Decoupling Applications Yun Chase AVX Corporation 801 17th Avenue South Myrtle Beach, SC 29577 Abstract: Methods to ensure signal integrity using decoupling capacitors have been the topic of many papers in the past as well as in the
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5M201-N
LICC avx 1999
Using Decoupling Capacitors
Signal Path Designer
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la sot-8
Abstract: No abstract text available
Text: FAIRCHILD May 1996 MlC O N D U C T O R NDH8447 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell -4.4A, -30V.
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NDH8447
la sot-8
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Untitled
Abstract: No abstract text available
Text: April 1998 FAIRCHILD MlC O N D U C T O R FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,
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FDP603AL
FDB603AL
FDPG03AL
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Untitled
Abstract: No abstract text available
Text: May 1997 FAIRCHILD MlC O N D U C TO R tm NDH8521C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,
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NDH8521C
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Untitled
Abstract: No abstract text available
Text: F /\IR G H II_ D N ovem ber 1997 MlC O N D U C T O R FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell
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FDC653N
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FDV301N
Abstract: FET N-CHANNEL
Text: F A IR C H IL D July 1997 MlC O N D U C T O R FDV301N Digital F E T , N-Channel General Description Features This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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FDV301N
FET N-CHANNEL
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1MBH65D-090A
Abstract: T760 X810 660 tg diode 052 B 660 TG
Text: 1MBH65D-090A IGBT H ± IG B T l^ f : Outline Drawings INSULATED GATE BIPOLAR TRANSISTOR Si 0.3 : Features • i H i g • h Speed Switching Low Saturation Voltage • Mlc#i MOS4'i —M&ia • / j v § S m a l l High Impedance Gate Gate Package C olle c to r
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1MBH65D-090A
l95t/R89
1MBH65D-090A
T760
X810
660 tg diode
052 B 660 TG
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