Untitled
Abstract: No abstract text available
Text: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■
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NAND02G-B2D
2112-byte/1056-word
TSOP48
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ULGA52
Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
ULGA52
NAND08GW3B2C
ONFI nand flash
NAND04GW3B2DN6
NAND08G-B2C
NAND08GR3B4C
NAND08GW3B4C
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LGA-52
Abstract: LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint
Text: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage
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NAND04G-B2D,
NAND08G-BxC
byte/1056
LGA-52
LGA52
NAND LGA52
NAND08GW3B2C
NAND04GW3B2DN6
NAND08GW3B4C
NAND04GW4B2D
NAND08GR
NAND08GW
lga52 footprint
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NAND02GW3B2D
Abstract: NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI VFBGA63 NAND02GW3B2D-N
Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface
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NAND02G-B2D
2112-byte/1056-word
TSOP48
VFBGA63
VFBGA63
NAND02GW3B2D
NAND02GW3B2DN6
NAND02GR3B2D
NAND02G-B2D
NAND02GR4B2D
bad block
ONFI
NAND02GW3B2D-N
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C7478
Abstract: No abstract text available
Text: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2B
4224-byte
C7478
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LGA52
Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
Text: NAND08GW3C2B NAND16GW3C4B 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Target Specification Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2B
NAND16GW3C4B
TSOP48
LGA52
LGA-52
ULGA52
nand 16g
16G nand flash
NAND08GW3C2B
NAND16GW3
NAND16GW3C4A
NAND16GW3C4B
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JESD97
Abstract: NAND04GW3B2B NAND08GW3B2A NAND04
Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories PRELIMINARY DATA Feature summary • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage
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NAND04GW3B2B
NAND08GW3B2A
Byte/1056
JESD97
NAND04GW3B2B
NAND08GW3B2A
NAND04
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NAND16GW3D2A
Abstract: C5761 2112B
Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3D2A
16-Gbit,
4224-byte
NAND16GW3D2A
C5761
2112B
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block code error management, verilog
Abstract: NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B
Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■
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NAND04GW3B2B
NAND08GW3B2A
Byte/1056
block code error management, verilog
NAND08GW3B2A
bad block
block code error management, verilog source code
JESD97
NAND04GW3B2B
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Untitled
Abstract: No abstract text available
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
TSOP48
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NAND02GR3B2D
Abstract: No abstract text available
Text: NAND02G-B2D 2 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Target Specification Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications
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NAND02G-B2D
byte/1056
TSOP48
NAND02GR3B2D
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LGA52
Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2A
NAND16GW3C4A
LGA52
LGA-52
NAND16GW3C4A
NAND08GW3C2A
16G nand
JESD97
NAND16GW3
NS4258
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NUMONYX
Abstract: JESD97 NAND04GW3B2B NAND08GW3B2A
Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■
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NAND04GW3B2B
NAND08GW3B2A
Byte/1056
NUMONYX
JESD97
NAND04GW3B2B
NAND08GW3B2A
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NAND08GW3F2A
Abstract: transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60
Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2A
NAND16GW3F2A
16-Gbit,
4224-byte
transistor sr61
NAND08GW3F
NAND16GW3F2A
A20-A32
transistor SR60
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NAND04GW3B4
Abstract: 4 bit microcontroller using vhdl bad block error correction code in vhdl vhdl code for 1 bit error generator JESD97
Text: NAND04GW3B 4 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memory PRELIMINARY DATA Feature summary • High density NAND Flash Memory – 4 Gbit memory array – Up to 128 Mbit spare area – Cost effective solution for mass storage applications ■ NAND Interface
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NAND04GW3B
Byte/1056
NAND04GW3B4
4 bit microcontroller using vhdl
bad block
error correction code in vhdl
vhdl code for 1 bit error generator
JESD97
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NUMONYX DDR
Abstract: NAND16GW3D2B
Text: NAND16GW3D2B 16-Gbit, 4320-byte page, 3 V supply, multiplane architecture, multilevel cell NAND flash memory Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage applications
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NAND16GW3D2B
16-Gbit,
4320-byte
NUMONYX DDR
NAND16GW3D2B
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NAND16GW3D2A
Abstract: NAND32GW3D4A
Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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16-Gbit,
4224-byte
NAND16GW3D2A
NAND32GW3D4A
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LGA52
Abstract: 4GW3 NAND08GW3C2B 2112B LGA-52 NAND04GW3C
Text: NANDxxGW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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2112-byte
TSOP48
LGA52
128yx
4GW3
NAND08GW3C2B
2112B
LGA-52
NAND04GW3C
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NAND16GW3D2A
Abstract: NAND32GW3D4A NAND08GW3D2A
Text: NAND08GW3D2A NAND16GW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area
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NAND08GW3D2A
NAND16GW3D2A
16-Gbit,
4224-byte
16-Gbi"
NAND16GW3D2A
NAND32GW3D4A
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NAND16GW3D2A
Abstract: numonyx MLC NAND32GW3D4A
Text: NANDxxGW3DxA 16- or 32-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – Up to 32 Gbits of memory array – Up to 1 Gbit of spare area – Cost-effective solutions for mass storage
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32-Gbit,
4224-byte
NAND16GW3D2A
numonyx MLC
NAND32GW3D4A
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NI3205
Abstract: NAND04GW3B2
Text: Numonyx NAND SLC large page 41 nm Discrete 4 Gbit, 2112 Byte/1056 Word page, x8/x16, 1.8 or 3 V, multiplane architecture Features – Cache read – Multiplane block erase • Density – 4 Gbit: 4096 blocks ■ NAND Flash interface – x8 or x16 bus width
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Byte/1056
x8/x16,
NI3205
NAND04GW3B2
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LGA52
Abstract: LGA-52 NAND04GW3B2D nand flash ONFI 3.0 NAND08GW3B2C NAND04GR4B2D NAND04G-B2D NAND04GR3B2D ONFI nand NAND LGA52
Text: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage
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NAND04G-B2D,
NAND08G-BxC
byte/1056
TSOP48
LGA52
LGA-52
NAND04GW3B2D
nand flash ONFI 3.0
NAND08GW3B2C
NAND04GR4B2D
NAND04G-B2D
NAND04GR3B2D
ONFI nand
NAND LGA52
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NAND04GB2D
Abstract: NAND04G-B2D
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
TSOP48
NAND04GB2D
NAND04G-B2D
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NAND08GW3F2A
Abstract: NAND08GW3F nand16gw3
Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2A
NAND16GW3F2A
16-Gbit,
4224-byte
NAND08GW3F
nand16gw3
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