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    FDC653N Price and Stock

    onsemi FDC653N

    MOSFET N-CH 30V 5A SUPERSOT6
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    DigiKey FDC653N Reel 3,000 3,000
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    FDC653N Cut Tape 1,405 1
    • 1 $0.66
    • 10 $0.572
    • 100 $0.3959
    • 1000 $0.28151
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    FDC653N Digi-Reel 1
    • 1 $0.66
    • 10 $0.572
    • 100 $0.3959
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    Avnet Americas FDC653N Reel 16 Weeks 3,000
    • 1 -
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    • 10000 $0.25085
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    Mouser Electronics FDC653N 66,128
    • 1 $0.49
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    Rochester Electronics FDC653N 6,000 1
    • 1 $0.254
    • 10 $0.254
    • 100 $0.2388
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    TME FDC653N 1,954 3
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    Avnet Asia FDC653N 16 Weeks 6,000
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    New Advantage Corporation FDC653N 15,000 1
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    Rochester Electronics LLC FDC653N

    SMALL SIGNAL FIELD-EFFECT TRANSI
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    DigiKey FDC653N Bulk 2,505 1,193
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    Fairchild Semiconductor Corporation FDC653N

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    Bristol Electronics FDC653N 80
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    FDC653N 1,867
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    Quest Components FDC653N 64
    • 1 $9
    • 10 $9
    • 100 $5.55
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    Rochester Electronics FDC653N 2,505 1
    • 1 $0.254
    • 10 $0.254
    • 100 $0.2388
    • 1000 $0.2159
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    FDC653N Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDC653N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC653N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC653N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDC653N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    FDC653N_NB3E005A Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC653N_NF073 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC653N_NL Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF

    FDC653N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDC653N NB3E005A NF073

    g995

    Abstract: WPC8763 G545B2 intel g41 crb ISL6251 ISL6236 WPC8769 acer lcd inverter schematic SLG8SP512 wpc8763ldg
    Text: 5 4 ISL6262A 3 2 1 VCC_CORE <VRON> PU3 D D +5VPCU +5VPCU <AC/DC Insert> FDS6690AS PQ26 FDC653N VIN PQ21 ISL6236 FDC653N PQ27 +3VPCU FDC653N PQ22 +3V_S5 <S5D> C +3VSUS <SUSD> AT814 PU1 FDC653N ADAPTER PQ29 +2.5V <MAINON> +3V <MAIND> VIN AT5206G PU2 BATTERY


    Original     		PDF ISL6262A FDS6690AS FDC653N ISL6236 FDC653N ISL6251 AT5206G AT814 g995 WPC8763 G545B2 intel g41 crb WPC8769 acer lcd inverter schematic SLG8SP512 wpc8763ldg

    Untitled

    Abstract: No abstract text available
    Text: November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDC653N OT-23

    FDC653N

    Abstract: SOIC-16
    Text: November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDC653N OT-23 FDC653N SOIC-16

    FDC653N

    Abstract: SOIC-16 1btransient
    Text: November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDC653N OT-23 FDC653N SOIC-16 1btransient

    BD 4215

    Abstract: SOT23-6 5mm uv led datasheet adc 0808 MARK A5 SOT23-6 marking B6 sot23 MARKING CF sot23-6 marking code DN SOT23 SOT23-6 MARKING b4 LTC4215CUFD-1
    Text: LTC4215-1 Hot Swap Controller with I2C Compatible Monitoring FEATURES DESCRIPTION n The LTC 4215-1 Hot Swap controller allows a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor, board supply voltage


    Original     		PDF LTC4215-1 CapacitorP-16 LTC4221 SSOP-16 LTC4230 SSOP-20 LTC4260 LTC4261 24-Lead SSOP-28 BD 4215 SOT23-6 5mm uv led datasheet adc 0808 MARK A5 SOT23-6 marking B6 sot23 MARKING CF sot23-6 marking code DN SOT23 SOT23-6 MARKING b4 LTC4215CUFD-1

    Supersot6

    Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
    Text: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5


    Original     		PDF FDC6401N FDC6305N FDC637AN FDC6303N FDC6301N FDC6561AN FDC645N FDC638P FDC640P FDC642P Supersot6 Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN

    BA41-00727A

    Abstract: LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 g n l u a s i t m


    Original     		PDF 965GM BA41-00727A TP17351 7SZ08 TP16469 TP16470 LTST-C193TBKT-AC A3212ELH/HED55XXU12 MT539 TP16471 LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus

    intel g41 crb

    Abstract: RBS 2204 isl6251 sot89 N35 ISL6236 sm 4026a G548A2 wpc8769ldg suyin cn1316 intel crb
    Text: 5 4 X'TAL 14.318MHZ 3 2 1 P33 CLOCK GENERATOR SELGO: SLG8SP512K05 FSB TVOUT CRT P37 CPU Merom 479 uFCPGA P3,P4 P2 D +1.2V/+1.25V/1.5V/2.5V VCORE ISL6262A ZD1(CHAPALA) SYSTEM BLOCK DIAGRAM Thermal Sensor BATTERYCHARGER (ISL6251) 5V/3.3V (ISL6236) P3 P33 667/800 Mhz


    Original     		PDF 318MHZ ISL6262A) SLG8SP512K05 ISL6236) ISL6251) PM965 Page34 PR161, PR163, PC156, intel g41 crb RBS 2204 isl6251 sot89 N35 ISL6236 sm 4026a G548A2 wpc8769ldg suyin cn1316 intel crb

    samsung 822

    Abstract: 37 TV samsung lcd Schematic circuit diagram samsung lcd tv power supply schematic schematic diagram crt tv samsung BD40 SAMSUNG TV 40 LCD SAMSUNG ELECTRONICS BA44 schematic atx 2.03 P4 37 TV samsung lcd Schematic g1003 lyon samsung
    Text: -이 기술 자산으로 승인자만이 사용할사용할 수 있습니다 이 문서는 문서는삼성전자의 삼성전자의 기술 자산으로 승인자만이 수 있습니다 - This can notnot be be used without Samsung's authorization ThisDocument


    Original     		PDF CK-505 EMC2102 478pin samsung 822 37 TV samsung lcd Schematic circuit diagram samsung lcd tv power supply schematic schematic diagram crt tv samsung BD40 SAMSUNG TV 40 LCD SAMSUNG ELECTRONICS BA44 schematic atx 2.03 P4 37 TV samsung lcd Schematic g1003 lyon samsung

    ISL6236

    Abstract: ISL6251 SLG8SP512T NB82801HBM quanta 3U22C intel G41 MOTHERBOARD crb PQ19 Socket AM2 GST5009LF
    Text: 5 MODEL: D 4 3 2 1 REV: CHANGE LIST: 1A FIRST RELEASE MODEL : Z01 MB 1B PAGE02. PAGE03. PAGE03. PAGE05. PAGE06. PAGE08. PAGE11. PAGE12. PAGE13. PAGE15. PAGE16. PAGE18. PAGE20. PAGE21. PAGE22. PAGE23. PAGE24. PAGE25. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1.


    Original     		PDF PAGE02. PAGE03. PAGE05. PAGE06. PAGE08. PAGE11. PAGE12. PAGE13. PAGE15. ISL6236 ISL6251 SLG8SP512T NB82801HBM quanta 3U22C intel G41 MOTHERBOARD crb PQ19 Socket AM2 GST5009LF

    MOSFET 2301

    Abstract: cxd9872 cxd9872k a6019 ah41 cps ec nvs mbx149 MMC2301 a6806 TX39D80VC1GAA transistor c1093
    Text: M C N 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date B Date 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 Page


    Original     		PDF LVDS/12/15) C1232 C1230 470pF PR412 PR169 PR168 PC175 PC174 C1309 MOSFET 2301 cxd9872 cxd9872k a6019 ah41 cps ec nvs mbx149 MMC2301 a6806 TX39D80VC1GAA transistor c1093

    SB315

    Abstract: gd2 ec16 BC327 C327 DVD remote controL HDT SCD22U vt8237 16-2-2C STM-M50FW040 24C256 foxconn
    Text: A B C D Gannet Block Diagram 3 CLK GEN AMD CPU 11,12,13 UNBUFFERED DDR SODIMM Athlon 64 4 11,12,13 UNBUFFERED DDR SODIMM 31 1394 Conn 32 RICOH R5C554 Power Switch 5532V PCMCIA 2 SLOTS Support TypeIII 8,9,10 VGA VIA 2* Slot Cardbus + 2* 1394 Ports K8T800 AGTL+ CPU I/F


    Original     		PDF CY28331-2 200-PIN 16b/8b DDR-SDRAM17 K4D263238A-GC36 R5C554 K8T800 GND18 42P26 GND26 SB315 gd2 ec16 BC327 C327 DVD remote controL HDT SCD22U vt8237 16-2-2C STM-M50FW040 24C256 foxconn

    MCP67

    Abstract: c4106 RSN 310 R37 ns892402 ISL6251 rtl8211b wpc8769ldg ricoh r5c833 fds8884 nvidia mcp67
    Text: 5 4 3 2 1 ZO3 SYSTEM BLOCK DIAGRAM D TV-OUT +2.5V/ +1.25VM/ +1.25V/ +1.5V SMDDR_VREF/ SMDDR_VTERM VCORE ISL6262A P14 D P25 TFT LCD Panel CPU Thermal Sensor AMD S1g1 uFCPGA638 WXGA P14 P14 VGA-Core (MAX 1993) +1.2V 5V/3.3V (TPS51120) P22 P24 Turion 64 Dual-Core/


    Original     		PDF ISL6262A) 25VM/ uFCPGA638 TPS51120) ISL6251) MCP67 CC-50V 10U/Y5U-10V 1U/X7R-50V PR119 MCP67 c4106 RSN 310 R37 ns892402 ISL6251 rtl8211b wpc8769ldg ricoh r5c833 fds8884 nvidia mcp67

    14D360

    Abstract: CIS10J270NC CQ509 BSS138_NL LM358DB SAMSUNG HT Q9 BSS138-NL samsung electronics ba41 M/CIS10J270NC C51MV MCP51
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D MONACO C B g n l u a s i t


    Original     		PDF 28-C2 28-C4 28-D1 33-C3 0033nF 015nF 033nF 047nF 14D360 CIS10J270NC CQ509 BSS138_NL LM358DB SAMSUNG HT Q9 BSS138-NL samsung electronics ba41 M/CIS10J270NC C51MV MCP51

    max8770

    Abstract: bpm t105 ICS9LPRS355AGLFT G545B1 ac41 cn19 100v 1p0 quanta h48 diode zener Zener diode H48 quanta computer MMBS3904
    Text: 1 2 3 4 5 7 8 LE5 BLOCK DIAGRAM module PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND1 A 6 CPU THERMAL SENSOR CPU Merom LAYER 3 : IN1 LAYER 4 : SVCC 14.318MHz A PAG 5 478P (uPGA)/35W PAG 3,4 LAYER 5 : IN2 01 CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK#


    Original     		PDF 318MHz ICS9LPRS355AGLFT 64pinsTSSOP G72M-128 MAX8724) SDM10K45-7-F/40V/0 SC4215 1U/10V/X7R 10U/4V/X6S max8770 bpm t105 G545B1 ac41 cn19 100v 1p0 quanta h48 diode zener Zener diode H48 quanta computer MMBS3904

    32 inch TV samsung lcd Schematic

    Abstract: U574 BA41-00717A 27b1 diode BA41-00718A BA41-0071 AP4435 22B2 DIODE 58c3 SLB9635TT1.2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D SYDNEY C B DRAW : : : : : : SYDNEY MAIN BA41-0071#A


    Original     		PDF 965PM BA41-0071 BA41-00717A BA41-00718A TP18631 TP18634 TP18650 TP18635 TP18636 32 inch TV samsung lcd Schematic U574 27b1 diode AP4435 22B2 DIODE 58c3 SLB9635TT1.2

    2PC502

    Abstract: intel g41 crb d2564 WPCE775 pi3vdp411 ISL6251 foxconn Quanta Cantiga 2A mini HDMI G780
    Text: 5 4 3 2 1 ZY2 SYSTEM BLOCK DIAGRAM BOM MARK X'TAL 14.318MHZ E@ EXT VGA 要打 CLOCK GENERATOR D D@ DOCK D2@ DDR2 要打 ICS: ICS9LPRS365BGLFT SELGO: SLG8SP512K05 SP@ 特殊 EXT VGA OR DDR2 CPU Penryn 479 uFCPGA P3,P4 268@ AUDIO 268 要打 Thermal Sensor D


    Original     		PDF 318MHZ ICS9LPRS365BGLFT SLG8SP512K05 PM965 Page31 Page19 Page21 Page23 2PC502 intel g41 crb d2564 WPCE775 pi3vdp411 ISL6251 foxconn Quanta Cantiga 2A mini HDMI G780

    H8S-2110B

    Abstract: HDR-40P-2R-SMD samsung u544 AMD 218S6ECLA21FG SB600 BGA IC monacor sp 202 SI2315BDS-T1 BD2430 RS600ME 36B2 U544-5
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D MONACO-R C B g n l u a s i


    Original     		PDF P16806 TP16807 TP16808 TP16809 TP16810 TP16811 TP16812 TP16813 TP16814 TP16815 H8S-2110B HDR-40P-2R-SMD samsung u544 AMD 218S6ECLA21FG SB600 BGA IC monacor sp 202 SI2315BDS-T1 BD2430 RS600ME 36B2 U544-5

    SC452IMLTRT

    Abstract: BA59-01900A SADP-90FH BA92-04460A TM-00379-003 UL1571 AWG28 BA61-00631A BA44-00233A 7SZ08 BA59-01724A
    Text: - This Document can not be used without Samsung's authorization - 5. Exploded View and Part List SYSTEM T0010 I0006 T0001 I0001 M3005 G0011 W3007 X2000 T2004 I0009 M0001 G3004 G0003 I0002 B0001 B0013 I0005 B0003 B0150 B0100 5-1 D0001 - This Document can not be used without Samsung's authorization -


    Original     		PDF T0010 I0006 T0001 I0001 M3005 G0011 X2000 W3007 T2004 M0001 SC452IMLTRT BA59-01900A SADP-90FH BA92-04460A TM-00379-003 UL1571 AWG28 BA61-00631A BA44-00233A 7SZ08 BA59-01724A

    30bg100

    Abstract: LM347
    Text: R sn Q i l v out 0.02Í2 FDC653N 3.3nH 2.5V, 3A


    OCR Scan     		PDF

    FDC653N

    Abstract: Supersot 6 Scans-0037042
    Text: FAIRCHILD MICQNDUCTDR M I jq q " 7 N ovem ber 1997 tm FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF FDC653N FDC653N Supersot 6 Scans-0037042

    Untitled

    Abstract: No abstract text available
    Text: F /\IR G H II_ D N ovem ber 1997 MlC O N D U C T O R FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF FDC653N

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D November 1997 S E M IC O N D U C T O R tm FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF FDC653N OT-23 FDC653N