100n60
Abstract: IXXR100N60B3H1
Text: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
10-30kHz
IC110
IXXR100N60B3H1
150ns
0-06A
100N60B3
12-01-11-B
100n60
IXXR100N60B3H1
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXR100N60B3H1 (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
IC110
IXXR100N60B3H1
150ns
10-30kHz
ISOPLUS247TM
0-06A
100N60B3
12-01-11-B
|
Untitled
Abstract: No abstract text available
Text: XPTTM 600V IGBT GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC110 = 68A VCE(sat) ≤ 1.80V Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
|
Original
|
PDF
|
MMIX1X100N60B3H1
IC110
10-30kHz
0-06A
|
Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information VCES = 600V IC110 = 68A VCE sat ≤ 1.35V IXGN72N60A3 GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
|
Original
|
PDF
|
IC110
IXGN72N60A3
OT-227B,
E153432
72N60A3
3-25-08-B
|
72N60A3
Abstract: IXGN72N60A3 C3632
Text: Preliminary Technical Information IXGN72N60A3 GenX3TM 600V IGBT VCES = 600V IC110 = 68A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
|
Original
|
PDF
|
IXGN72N60A3
IC110
OT-227B,
E153432
72N60A3
3-25-08-B
IXGN72N60A3
C3632
|
68A diode
Abstract: k 68a APTM100A12ST
Text: APTM100A12ST Phase leg Schottky Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 120mΩ max @ Tj = 25°C ID = 68A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies S2 G2 NTC1 NTC2
|
Original
|
PDF
|
APTM100A12ST
68A diode
k 68a
APTM100A12ST
|
Untitled
Abstract: No abstract text available
Text: APTM100A12ST Phase leg Schottky Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 120mΩ Ω max @ Tj = 25°C ID = 68A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features
|
Original
|
PDF
|
APTM100A12ST
|
Untitled
Abstract: No abstract text available
Text: TechnicalInformation 6PS04012E4DG36022 PrimeSTACK Preliminarydata Keydata Generalinformation sensorsincluded.
|
Original
|
PDF
|
6PS04012E4DG36022
FF200R12KE4
|
irfp4568pbf
Abstract: No abstract text available
Text: PD -96175 IRFP4568PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)
|
Original
|
PDF
|
IRFP4568PbF
O-247AC
O-247AC
irfp4568pbf
|
IRFP4568
Abstract: IRFP4568PBF DM 103A 103A irf 151 AN-994
Text: PD -96175 IRFP4568PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS RDS on typ. max. ID (Silicon Limited)
|
Original
|
PDF
|
IRFP4568PbF
O-247AC
O-247AC
IRFP4568
IRFP4568PBF
DM 103A
103A
irf 151
AN-994
|
Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
|
Original
|
PDF
|
AUIRFP4568
AUIRFP4568-E
|
MARKING CODE 41A
Abstract: No abstract text available
Text: StrongIRFET IRFH7787PbF HEXFET Power MOSFET Application • Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
|
Original
|
PDF
|
IRFH7787PbF
IRFH7787TRPbF
JESD47Fâ
J-STD-020Dâ
MARKING CODE 41A
|
AUIRF7648M2TR
Abstract: No abstract text available
Text: PD - 96317A AUTOMOTIVE GRADE AUIRF7648M2TR AUIRF7648M2TR1 DirectFET Power MOSFET V BR DSS RDS(on) typ. • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile
|
Original
|
PDF
|
6317A
AUIRF7648M2TR
AUIRF7648M2TR1
AUIRF7648M2
|
AUIRF7669
Abstract: No abstract text available
Text: PD - 97536A AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET V BR DSS 100V RDS(on) typ. 3.5mΩ max. 4.4mΩ ID (Silicon Limited) 114A Qg 81nC • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications
|
Original
|
PDF
|
7536A
AUIRF7669L2TR
AUIRF7669L2TR1
AUIRF7669
|
|
|
Untitled
Abstract: No abstract text available
Text: PD - 97536A AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET V BR DSS 100V RDS(on) typ. 3.5mΩ max. 4.4mΩ ID (Silicon Limited) 114A Qg 81nC • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications
|
Original
|
PDF
|
7536A
AUIRF7669L2TR
AUIRF7669L2TR1
AUIRF7669L2TR
|
AUIRF7669
Abstract: auirf7669l2tr AUIRF7669L2TR1
Text: PD - 97536 AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET V BR DSS 100V RDS(on) typ. 3.5mΩ max. 4.4mΩ ID (Silicon Limited) 114A Qg 81nC • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications
|
Original
|
PDF
|
AUIRF7669L2TR
AUIRF7669L2TR1
AUIRF7669L2TR
AUIRF7669
AUIRF7669L2TR1
|
AUIRF7648M2
Abstract: BV 726 B
Text: PD - 96317B AUIRF7648M2TR AUIRF7648M2TR1 • • AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET V BR DSS 60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 5.5mΩ other Heavy Load Applications max. 7.0mΩ
|
Original
|
PDF
|
96317B
AUIRF7648M2TR
AUIRF7648M2TR1
AUIRF7648M2
BV 726 B
|
AUIRF7648M2TR1
Abstract: No abstract text available
Text: PD - 96317 AUTOMOTIVE GRADE AUIRF7648M2TR AUIRF7648M2TR1 DirectFET Power MOSFET V BR DSS RDS(on) typ. • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile
|
Original
|
PDF
|
AUIRF7648M2TR
AUIRF7648M2TR1
AUIRF7648M2
AUIRF7648M2TR1
|
2n0607
Abstract: INFINEON PART MARKING to263 2n0607 equivalent ANPS071E SPB80N06S2-07 SPI80N06S2-07 SPP80N06S2-07 2N06
Text: SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 6.6 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1
|
Original
|
PDF
|
SPI80N06S2-07
SPP80N06S2-07
SPB80N06S2-07
SPP80N06S2-07
Q67060-S6024
Q67060-S6026
2N0607
Q67060-S6037
2n0607
INFINEON PART MARKING to263
2n0607 equivalent
ANPS071E
SPB80N06S2-07
SPI80N06S2-07
2N06
|
Untitled
Abstract: No abstract text available
Text: SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS N-Channel RDS on Enhancement mode max. SMD version ID Logic Level P- TO263 -3-2 175°C operating temperature V 6.5 m 100 A P- TO220 -3-1 Avalanche rated dv/dt rated
|
Original
|
PDF
|
SPP100N08S2L-07
SPB100N08S2L-07
SPP100N08S2L-07
Q67060-S6045
SPB100N08S2L-07
Q67060-S6047
PN08L07
BSPP100N08S2L-07
BSPB100N08S2L-07,
|
3n0408
Abstract: 3N04
Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPD50N04S3-08 Product Summary V DS 40 V R DS on ,max 8.0 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
|
Original
|
PDF
|
IPD50N04S3-08
PG-TO252-3-11
3N0408
3n0408
3N04
|
2n0607
Abstract: SMD MARKING "68A" SPP80N06S2-07 Q67060S60 2N060 Q67060-S6026
Text: Preliminary data SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V • Enhancement mode R DS on 6.6 mΩ • 175°C operating temperature ID 80 A • Avalanche rated P-TO262-3-1 P-TO263-3-2
|
Original
|
PDF
|
SPI80N06S2-07
SPP80N06S2-07
SPB80N06S2-07
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
SPB80N06S2-07
SPI80N06S2-07
P-TO220-3-1
2n0607
SMD MARKING "68A"
Q67060S60
2N060
Q67060-S6026
|
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
|
OCR Scan
|
PDF
|
CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
|
IRL2203N equivalent
Abstract: C564 c562
Text: PD - 9.1378B International IOR Rectifier IRLI2203N HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ® Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
|
OCR Scan
|
PDF
|
1378B
IRLI2203N
O-220
C-563
C-564
IRL2203N equivalent
C564
c562
|
