4141d
Abstract: S6098 6 GPT09161 Q67060-S6098
Text: BTS 4141D Smart High-Side Power Switch 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ • Current limitation Operating voltage Vbb(on) • Overload protection On-state resistance • Overvoltage protection (including load dump)
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4141D
P-TO252-5-1
4141d
S6098 6
GPT09161
Q67060-S6098
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VPS05163
Abstract: BSS100 GPS05560 Q67060-S6084-A101
Text: BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1Ω Features Product Summary • Current controlled input Overvoltage protection Vbbin AZ • Short circuit protection Operating voltage Vbb(on) • Current limitation On-state resistance RON 62 V
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OT-223
VPS05163
VPS05163
BSS100
GPS05560
Q67060-S6084-A101
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Q67060-S6038
Abstract: SPB100N04S2L-03 SPP100N04S2L-03 Diode 1_b SMD PN04L03
Text: SPP100N04S2L-03 SPB100N04S2L-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated Type Package VDS 40 RDS on max. SMD version 3 ID
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SPP100N04S2L-03
SPB100N04S2L-03
P-TO263-3-2
P-TO220-3-1
SPP100N04S2L-03
Q67060-S6038
PN04L03
SPB100N04S2L-03
Q67060-S6038
Diode 1_b SMD
PN04L03
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DIODE H5 SMD
Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package
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SPP80N06S2-H5
SPB80N06S2-H5
Q67060-S6052
2N06H5
Q67060-S6053
BSPP80N06S2-H5
BSPB80N06S2-H5,
DIODE H5 SMD
2n06h5
smd diode H5
70H100
ANPS071E
SPB80N06S2-H5
SPP80N06S2-H5
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2N06L06
Abstract: DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a
Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 6.3 mΩ ID 80 A P- TO263 -3-2 • 175°C operating temperature P- TO220 -3-1 • Avalanche rated • dv/dt rated
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SPP80N06S2L-06
SPB80N06S2L-06
Q67060-S6033
Q67060-S6034
2N06L06
BSPP80N06S2L-06
BSPB80N06S2L-06,
2N06L06
DIODE led SMD 5050
smd led 5050 datasheet
SPB80N06S2L-06
SPP80N06S2L-06
ANPS071E
smd diode marking 69a
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diode 6-7
Abstract: IL30 BTS6133D GPT09161 IL12 SMD transistor package code V12 TO-252-5-1 6133 diode
Text: PROFET Data sheet BTS 6133 D Smart Highside Power Switch Reversave Product Summary Operating voltage On-state resistance Nominal current Load current ISO Current limitation Package • Reverse battery protection by self turn on of power MOSFET Inversave
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O-252-5-1
2003-Oct-01
diode 6-7
IL30
BTS6133D
GPT09161
IL12
SMD transistor package code V12
TO-252-5-1
6133 diode
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ANPS071E
Abstract: SPB100N04S2L-03 SPP100N04S2L-03 PN04L03
Text: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3 mΩ • Logic Level ID 100 • 175°C operating temperature P- TO263 -3-2 A P- TO220 -3-1 • Avalanche rated
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SPP100N04S2L-03
SPB100N04S2L-03
SPP100N04S2L-03
Q67060-S6038
PN04L03
SPB100N04S2L-03
Q67060-S6039
BSPP100N04S2L-03
BSPB100N04S2L-03,
ANPS071E
PN04L03
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4141D
Abstract: GPT09161 Q67060-S6098
Text: BTS 4141D Smart High-Side Power Switch 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ • Current limitation Operating voltage Vbb(on) • Overload protection On-state resistance • Overvoltage protection (including load dump)
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4141D
P-TO252-5-1
2003-Oct-01
4141D
GPT09161
Q67060-S6098
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pn0605
Abstract: Q67060-S6049 ANPS071E SPB100N06S2-05 SPP100N06S2-05 6E60
Text: SPP100N06S2-05 SPB100N06S2-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.7 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated
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SPP100N06S2-05
SPB100N06S2-05
Q67060-S6048
PN0605
Q67060-S6049
BSPP100N06S2-05
BSPB100N06S2-05,
pn0605
Q67060-S6049
ANPS071E
SPB100N06S2-05
SPP100N06S2-05
6E60
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2N06L11
Abstract: ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L
Text: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 11 mΩ ID 80 A • Logic Level • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code
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SPP80N06S2L-11
SPB80N06S2L-11
Q67060-S6035
2N06L11
Q67060-S6036
BSPP80N06S2L-11
BSPB80N06S2L-11,
2N06L11
ANPS071E
SPB80N06S2L-11
SPP80N06S2L-11
Q67060-S6035
2N06L
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4141d
Abstract: BTS 19 switching power supply 3kw pcb Smart High-Side Power Switch 1 Channel
Text: BTS 4141D Smart High-Side Power Switch 1 Channel: 1 x 200mW Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ · Current limitation Operating voltage Vbb(on) · Overload protection On-state resistance · Overvoltage protection (including load dump)
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4141D
200mW
P-TO252-5-1
4141d
BTS 19
switching power supply 3kw pcb
Smart High-Side Power Switch 1 Channel
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Untitled
Abstract: No abstract text available
Text: PROFET Data sheet BTS 6144B/P Smart Highside Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET Features • Short circuit protection with latch • Current limitation • Overload protection • Thermal shutdown with restart
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6144B/P
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2N06LH5
Abstract: No abstract text available
Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated
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SPP80N06S2L-H5
SPB80N06S2L-H5
P-TO220-3-1
P-TO263-3-2
P-TO220-3-1
Q67060-S6054
Q67060-S6055
2N06LH5
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INFINEON BSS100
Abstract: BTS4140
Text: BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1W Features Product Summary • Current controlled input Overvoltage protection Vbbin AZ · Short circuit protection Operating voltage Vbb(on) · Current limitation On-state resistance RON 62 V 4.9.60 V
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2N08L50
Abstract: 58W smd smd 58w Q67060-S6062 marking code 58W 04
Text: SPD22N08S2L-50 Preliminary data OptiMOS â Power-Transistor Feature • N-Channel Product Summary • Enhancement mode VDS 75 V • Logic Level RDS on 50 mΩ • 175°C operating temperature ID 22 A • Avalanche rated P-TO-252-3-11 • dv/dt rated Type
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SPD22N08S2L-50
P-TO-252-3-11
Q67060-S6062
2N08L50
2N08L50
58W smd
smd 58w
Q67060-S6062
marking code 58W 04
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PN08L07
Abstract: SMD MARKING "68A" Q67060-S6047 INFINEON smd PART MARKING SPB100N08S2L-07 Q67060-S6045
Text: SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS N-Channel RDS on Enhancement mode max. SMD version ID Logic Level P- TO263 -3-2 175°C operating temperature V 6.5 m 100 A P- TO220 -3-1 Avalanche rated dv/dt rated
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SPP100N08S2L-07
SPB100N08S2L-07
Q67060-S6045
Q67060-S6047
PN08L07
BSPP100N08S2L-07
BSPB100N08S2L-07,
SMD MARKING "68A"
INFINEON smd PART MARKING
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2N06LH5
Abstract: No abstract text available
Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated
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SPP80N06S2L-H5
SPB80N06S2L-H5
P-TO263-3-2
P-TO220-3-1
Q67060-S6054
2N06LH5
2N06LH5
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4141D
Abstract: GPT09161
Text: BTS 4141D Smart High-Side Power Switch 1 Channel: 1 x 200mW Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ · Current limitation Operating voltage Vbb(on) · Overload protection On-state resistance · Overvoltage protection (including load dump)
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4141D
200mW
P-TO252-5-1
4141D
GPT09161
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to220-7-180
Abstract: H8243 IL12 P-TO220-7-230 Q67060-S6058 power transistor for inductive load in to220 package
Text: P R O D U C T B R I E F The BTS 6144P is a single channel high-side power switch 9 mΩ in TO220-7-230 package. The BTS 6144B is the same high-side power switch in TO220-7-180 (SMD) package. They are fully protected by embedded protection functions including ReverSafe.
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6144P
O220-7-230
6144B
O220-7-180
B152-H8243-X-X-7600
to220-7-180
H8243
IL12
P-TO220-7-230
Q67060-S6058
power transistor for inductive load in to220 package
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2N06LH5
Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055
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SPP80N06S2L-H5
SPB80N06S2L-H5
Q67060-S6054
Q67060-S6055
2N06LH5
BSPP80N06S2L-H5
BSPB80N06S2L-H5,
2N06LH5
S6054
DIODE H5 SMD
Q67060-S6055
smd diode H5
SPB80N06S2L-H5
ANPS071E
SPP80N06S2L-H5
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Q67060-S6002
Abstract: TC-130-W
Text: BTS 247 Z Speed TEMPFET • N-Channel • Enhancement mode 1 • Logic Level Input 1 • Analog driving possible 5 • Fast switching up to 1 MHz VPT05166 5 VPT05165 • Potential-free temperature sensor with thyristor characteristics • Overtemperature protection
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VPT05166
VPT05165
O-220
O-220-5
Q67060-S6001
Q67060-S6002
Q67060-S6002
TC-130-W
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Q67060-S6005-A2
Abstract: GPT05167 P-TO220-7-230 P-TO220-7-3 Q67060-S6004-A2
Text: BTS 282 Z Speed TEMPFET • N-Channel • Enhancement mode • Logic Level Input 1 1 • Analog driving possible 7 VPT05167 7 VPT05754 • Fast switching up to 1 MHz • Potential-free temperature sensor with thyristor characteristics • Overtemperature protection
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VPT05167
VPT05754
P-TO220-7-3
Q67060-S6004-A2
P-TO220-7-180
Q67060-S6005-A2
P-TO220-7-230
Q67060-S6007
Q67060-S6005-A2
GPT05167
P-TO220-7-230
P-TO220-7-3
Q67060-S6004-A2
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PN0807
Abstract: SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd
Text: SPP100N08S2-07 SPB100N08S2-07 Preliminary data OptiMOS=Power-Transistor Feature N-Channel Product Summary Enhancement mode VDS 75 V 175°C operating temperature RDS on max. SMD version 6.8 m Avalanche rated ID 100 A dv/dt rated P-TO263-3-2 Type
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SPP100N08S2-07
SPB100N08S2-07
P-TO263-3-2
P-TO220-3-1
Q67060-S6044
PN0807
P-TO263-3-2
Q67060-S6046
P-TO220-3-1
PN0807
SPB100N08S2-07
SPP100N08S2-07
smd diode UM 07
BSPB100N08S2-07
66a smd
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PN06L05
Abstract: ANPS071E SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043
Text: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P- TO263 -3-2 • 175°C operating temperature 55 V 4.4 mΩ 100 A P- TO220 -3-1 • Avalanche rated
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SPP100N06S2L-05
SPB100N06S2L-05
SPP100N06S2L-05
Q67060-S6043
SPB100N06S2L-05
Q67060-S6042
PN06L05
BSPP100N06S2L-05
BSPB100N06S2L-05,
PN06L05
ANPS071E
Q67060-S6043
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