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    MJ 411 TRANSISTOR Search Results

    MJ 411 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJ 411 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3128

    Abstract: No abstract text available
    Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 9.5 mΩ (typ.) l High forward transfer admittance : |Yfs| = 40 S (typ.)


    Original     		PDF 2SK3128 2SK3128

    K3128

    Abstract: 2SK3128
    Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.)


    Original     		PDF 2SK3128 K3128 2SK3128

    Untitled

    Abstract: No abstract text available
    Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.)


    Original     		PDF 2SK3128

    CEP04N6

    Abstract: 600V,4A DIODE
    Text: CEP04N6/CEB04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 4A , RDS ON =2.5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		PDF CEP04N6/CEB04N6 O-220 O-263 CEP04N6 600V,4A DIODE

    K3128

    Abstract: 2SK3128
    Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.)


    Original     		PDF 2SK3128 K3128 2SK3128

    K3128

    Abstract: 2SK3128
    Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.)


    Original     		PDF 2SK3128 K3128 2SK3128

    K3128

    Abstract: 2SK3128 k312
    Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.)


    Original     		PDF 2SK3128 K3128 2SK3128 k312

    Untitled

    Abstract: No abstract text available
    Text: DC DC Filter & Surge Protection DSF226 Series xppower.com • Up to 200 W Output Power • Active Surge Protection • MIL STD 461 & DEF STAN 59 411 • MIL STD 1275A D • DEF STAN 61 5 Part 6 Issue 6 • MIL STD 810 • 3 Year Warranty Specification Input


    Original     		PDF DSF226 MIL-STD-1275A/B/C/D MIL-STD-704A, DSF226 MTC50 MTC150 19-Nov-13

    Untitled

    Abstract: No abstract text available
    Text: OM6501ST OM6502ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability


    OCR Scan     		PDF OM6501ST OM6502ST O-257AA MIL-S-19500, OM65Q1ST OM65Q2ST

    2SK3128

    Abstract: SC-65 mj 411 transistor
    Text: TO SH IBA 2SK3128 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 28 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : RßS (ON) = 9.5 mH (Typ.)


    OCR Scan     		PDF 2SK3128 2SK3128 SC-65 mj 411 transistor

    Untitled

    Abstract: No abstract text available
    Text: OM6512SC OM6513SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt. 8 Am p. N-C hannel IGBT In A H e r m e tic Metal Package FEATURES • Isolated Hermetic Metal Package • High Input Impedance • Low On-Voltage • High Current Capability


    OCR Scan     		PDF OM6512SC OM6513SC O-258AA MIL-S-19500, OM6513SC

    GP11N

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N 6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		PDF MGP11N60E GP11N

    Untitled

    Abstract: No abstract text available
    Text: OM6514SS OM6515SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt. 8 Am p , N- Channel IGBT In A H erm e tic Metal Package FEATURES • • • • • • • • Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance


    OCR Scan     		PDF OM6514SS OM6515SS MIL-S-19500, OM6515SS

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3128 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSYI 2 S K 3 1 28 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS U nit in mm APPLICATIONS 15.9 MAX.


    OCR Scan     		PDF 2SK3128

    Untitled

    Abstract: No abstract text available
    Text: OM6508SA OM65Q9SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package FEATURES • • • • • • • • • Isolated Hermetic Metal Package


    OCR Scan     		PDF OM6508SA OM65Q9SA O-254AA MIL-S-19500, 125-C OM65Q OM65Q QM6509SA

    IGBT in resonant converters

    Abstract: ceis
    Text: QM6507SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 1000 Volt. 8 A m p. N -C hannel IGBT In A H e rm e tic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off


    OCR Scan     		PDF QM6507SA O-254AA MIL-S-19500, QM6507SA O-254AA IGBT in resonant converters ceis

    12N60FI

    Abstract: 12N60F sth12n60fi 12N60 transistor 12n60 st 12N60 12N-60F STH12N60 12n60 dc GS 069 7.2 24 v
    Text: SGS-THOMSON ELiOT iD SS STH12N60 STH12N60FI N^ CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH12N60 STH12N60FI d ss 600 V 600 V R D S (o n Id 0.6 n 0.6 £2 12 A 7 A ; ; . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STH12N60 STH12N60FI ISOWATT218 12N60 12V60/' 12N60FI 12N60F sth12n60fi transistor 12n60 st 12N60 12N-60F 12n60 dc GS 069 7.2 24 v

    gc212

    Abstract: STH8N80 STH8N80FI STW8N80 C18070
    Text: 7 T 2 t1 2 3 7 OOMSTOO *=554 • S G T H _ SGS-THOMSON LK3TOKS ¿ 5 7 STH8N80/FI STW8N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V STH8N80 STH8N 80FI STW 8N80 ■ . ■ . . . ■ dss 800 V 800 V 800 V RDS on Id


    OCR Scan     		PDF 7T2t1237 STH8N80/FI STW8N80 STH8N80 STH8N80FI STW8N80 7R21E37 0D45TDb STH8N80/FI-STW8N80 gc212 C18070

    Untitled

    Abstract: No abstract text available
    Text: OM65Û5SA OM65Q6SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability


    OCR Scan     		PDF OM65Q6SA O-254AA MIL-S-19500, OM65Q5SA

    53N05

    Abstract: STP53N05
    Text: • £Z7 7^2^237 GDMbSll T T3 M S f i T H _ S G S -T H O M S O N [ œ ô jO T ô * S STP 53 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP53N05 . . ■ . . . . . V R D S (o n Id < 0.025 Í2 53 A dss 50 V TYPIC A L RDS(on) = 0.022 Q


    OCR Scan     		PDF STP53N05 7T2T237 004b517 53N05 STP53N05

    Untitled

    Abstract: No abstract text available
    Text: OM6505SA OM65Q6SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt. 15 A n d 20 A m p , N - C h a n n e l IGBT In A H e r m e t i c Metal P a c k a g e FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage


    OCR Scan     		PDF OM6505SA OM65Q6SA O-254AA MIL-S-19500, OM65Q6SA

    9816A

    Abstract: IRFV360 K11S
    Text: Data Sheet No. PD-9.816A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV36Q :n N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number BV q s s RDS on


    OCR Scan     		PDF IRFV3600 IRFV360U O-258 MIL-S-19SM 9816A IRFV360 K11S

    buz 71

    Abstract: No abstract text available
    Text: SIEMENS BUZ 71 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 71 Vbs 50 V b 14 A flbs<on 0.1 a Package Ordering Code TO-220 AB C67078-S1316-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1316-A2 buz 71

    Untitled

    Abstract: No abstract text available
    Text: OM651OSC OM6511SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 500 Volt. 20 A n d 30 A m p , N - C h a n n e l IG B T W ith a Soft R ec o v ery Diode In A H e r m e t i c Metal P a c k a g e FEATURES • • • • • • • •


    OCR Scan     		PDF OM651OSC OM6511SC O-258AA MIL-S-19500,