EG430
Abstract: 11R2S
Text: OM6501ST OM65Q2ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt. 5 A n d 10 A m p . N - C h a n n e l IG B T In A H e r m e t i c Metal P a c k a g e FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage
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OM6501ST
OM65Q2ST
O-257AA
MIL-S-19500,
6501ST
6502ST
EG430
11R2S
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OM6501ST
Abstract: No abstract text available
Text: OM6501ST OM65Q2ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 A nd 10 A m p , N -C h a n n el IG B T In A H erm e tic M etal P ackag e FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability
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OCR Scan
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PDF
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OM6501ST
OM65Q2ST
O-257AA
MIL-S-19500,
100S2
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Untitled
Abstract: No abstract text available
Text: OM6501ST OM6502ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability
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OCR Scan
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PDF
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OM6501ST
OM6502ST
O-257AA
MIL-S-19500,
OM65Q1ST
OM65Q2ST
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