GP11N Search Results

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Motorola Semiconductor Products MGP11N60ED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MGP11N60ED		1,493		5	1 - 10 $1.2375 100 $0.4641 1000 $0.3465 10000 $0.3218	Buy Now
onsemi MGP11N60ED Insulated Gate Bipolar Transistor, 15A, 600V, N-Channel, TO-220AB '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MGP11N60ED		178		1	1 $0.5005 10 $0.5005 100 $0.4705 1000 $0.4254 10000 $0.4254	Buy Now
Marathon Special Products 672-GP-11NH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	672-GP-11NH		100			1 - 10 $16.72 100 $12.84 1000 $11.66 10000 $11.66	Buy Now
Marathon Special Products 671GP11NH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	671GP11NH					1 - 10 $9.82 100 $5.16 1000 $5.16 10000 $5.16	Buy Now
Marathon Special Products 670A-GP-11NH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	670A-GP-11NH					1 - 10 $14.19 100 $5.45 1000 $5.45 10000 $5.45	Buy Now

GP11N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M GP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced	OCR Scan	PDF	GP11N60E/D
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by GP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	PDF	MGP11N60E/D GP11N6 21A-06 O-220AB
GP11N Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N 6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	PDF	MGP11N60E GP11N
11n60 Abstract: No abstract text available Text: MOTOROLA Order this document by GP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet GP11N60DE In sulated G ate Bipolar TVansistor with A n ti-P arallel Diode IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE	OCR Scan	PDF	MGP11N60DE/D 2PHX34714-0 11n60
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C	OCR Scan	PDF	MGP11 N60ED/D MGP11N60ED/D
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE	OCR Scan	PDF	MGP11N60ED
IN 2155 Abstract: AACE XTAL 14.7456MHZ R SCN26562 H1061 TRANSISTOR S2A SCN26562C4I40 SCN26562C4N40 SCN26562C4N48 Text: I SCN26562 S ig n e tic s Dual Universal Serial Communications Controller DUSCC Microprocessor Products Objective Specification DESCRIPTION The Signetics SCN26562 Dual Universal S e ria l C o m m u n ic a tio n s C o n tro lle r (DUSCC) is a single-chip MOS-LSI com	OCR Scan	PDF	SCN26562 SCN26562 WF22S90S IN 2155 AACE XTAL 14.7456MHZ R H1061 TRANSISTOR S2A SCN26562C4I40 SCN26562C4N40 SCN26562C4N48