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    MITSUBISHI RF POWER MOS FET RD 100 Search Results

    MITSUBISHI RF POWER MOS FET RD 100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MITSUBISHI RF POWER MOS FET RD 100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pO115

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


    Original     		PDF RD100HHF1 30MHz RD100HHF1 30MHz RD100HHF1-101 pO115

    100w amplifier RD100HHF1

    Abstract: rd100hHf1 100w RD100HHF1 RD100HHF1-101 RD100HH hf amplifier 100w
    Text: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


    Original     		PDF RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 Oct2011 100w amplifier RD100HHF1 100w RD100HHF1 RD100HH hf amplifier 100w

    RD 15 hf mitsubishi

    Abstract: RD100HHF1 RD100HHF1-101 MITSUBISHI RF POWER MOS FET rd 100 100w RD100HHF1 rd100hhf hf power transistor mosfet hf amplifier 100w Mitsubishi transistor rf final RD100HH
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original     		PDF RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 RD 15 hf mitsubishi RD100HHF1-101 MITSUBISHI RF POWER MOS FET rd 100 100w RD100HHF1 rd100hhf hf power transistor mosfet hf amplifier 100w Mitsubishi transistor rf final RD100HH

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		PDF 30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for 900MHz-band RF power amplifiers 18.0+/-0.3 applications.


    Original     		PDF RD20HMF1 900MHz RD20HMF1 900MHz-band 900MHz RD20HMF1-101

    RD16HHF1 application notes

    Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


    Original     		PDF RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1or RD16HHF1 application notes RD16HHF RD16HHF1-101 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE

    MOSFET POWER TRANSISTOR

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for 900MHz-band RF power amplifiers 18.0+/-0.3 applications.


    Original     		PDF RD20HMF1 900MHz RD20HMF1 900MHz-band RD20HMF1-101 Oct2011 MOSFET POWER TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101

    RD16HHF1

    Abstract: RD16HHF RD16HHF1 application notes RD16HHF1-101 RD16H PO-20W
    Text: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.


    Original     		PDF RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-101 Oct2011 RD16HHF RD16HHF1 application notes RD16H PO-20W

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING RD06HHF1 is a MOS FET type transistor specifically 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz RD06HHF1 30MHz

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD45HMF1 RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W DESCRIPTION OUTLINE RD45HMF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for 900MHz-band High power amplifiers 7.0+/-0.5 11.0+/-0.3


    Original     		PDF RD45HMF1 900MHz RD45HMF1 900MHz-band 800-900MHz RD45HMF1-101 Oct2011

    RD60HUF1-101

    Abstract: RD60HUF High frequency P MOS FET transistor 60W POWER AMPLIFIER CIRCUIT
    Text: < Silicon RF Power MOS FET Discrete > RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


    Original     		PDF RD60HUF1 520MHz RD60HUF1 RD60HUF1-101 Oct2011 RD60HUF High frequency P MOS FET transistor 60W POWER AMPLIFIER CIRCUIT

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101

    1299 mosfet

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3


    Original     		PDF RD30HUF1 520MHz RD30HUF1 RD30HUF1-101 Oct2011 1299 mosfet

    rd16hhf1

    Abstract: RD16HHF1 application notes Rd16hhf
    Text: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.


    Original     		PDF RD16HHF1 30MHz 30MHz RD16HHF1 RD16HHF1 application notes Rd16hhf

    RD70HHF

    Abstract: a 1757 transistor RD70HHF1 TRANSISTOR D 1765 738
    Text: < Silicon RF Power MOS FET Discrete > RD70HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION RD70HHF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


    Original     		PDF RD70HHF1 30MHz RD70HHF1 RD70HHF1-101 Oct2011 RD70HHF a 1757 transistor TRANSISTOR D 1765 738

    147J

    Abstract: 100OHM RD30HUF1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 147J 100OHM

    RD20HMF1

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers


    Original     		PDF RD20HMF1 900MHz RD20HMF1 900MHz-band 900MHz RD20HMFor

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD45HMF1 RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W DESCRIPTION OUTLINE DRAWING RD45HMF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for 900MHz-band High power amplifiers 7.0+/-0.5 11.0+/-0.3


    Original     		PDF RD45HMF1 900MHz RD45HMF1 900MHz-band 900MHz 800-900MHz RD45HMF1-101

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION RD60HUF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for UHF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


    Original     		PDF RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD70HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION RD70HHF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


    Original     		PDF RD70HHF1 30MHz RD70HHF1 30MHz RD70HHF1-101

    100OHM

    Abstract: RD45HMF1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers


    Original     		PDF RD45HMF1 900MHz RD45HMF1 900MHz-band 900MHz 800-900MHz RD45HMF1-101 100OHM

    RD06HHF1

    Abstract: RD06HHF1-101 RD06HHF 10TURNS 40gp0
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-or RD06HHF1-101 RD06HHF 10TURNS 40gp0

    Untitled

    Abstract: No abstract text available
    Text: ATTENTION O B SE R V E PR EC A U T IO N S FOR HANDLING e l e t r o s t a t ic TENTATIVE MITSUBISHI RF POWER MOS FET RD60HUF1 SENSITIVE D E V IC E S OUTLINE DESCRIPTION DRAWING RDéOHUFï is a MO^J FJ3T type transistor specifically designed for UHF High power amplifiers applications-


    OCR Scan     		PDF RD60HUF1 520MHz 25deg Tc-25deg 520MHz RD60HUF