MGFS36E2527
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE. 36E 2527 Lot No. FEATURES • • • • •
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MGFS36E2527
MGFS36E2527
27dBm
50ohms
IEEE802
16e-2005
350degC.
September-2007
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MGFS36E2527
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2527 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2527 Lot No. FEATURES • • • • •
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MGFS36E2527
MGFS36E2527
27dBm
50ohms
IEEE802
16e-2005
350degC.
January-2008
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PM30RSF060
Abstract: PM20CSJ060 pm10csj060 mitsubishi PM30CSJ060 PM50RSK060 380VDC PM75RSA060 PM30ctj060-3 AC200 M57147AU-01
Text: MITSUBISHI HYBRID IC M57147AU-01 IPM POWER SUPPLY UNIT OUTLINE DRAWING Lot No M57147AU-01 XXXX 1 18 36 Pin No 19 1.6 33 MAX 82MAX 0.35±0.2 80.35 2.54 0.55±0.1 2.54✕17=43 Electrical isolation between input and outputs . 1500Vrms 1minute
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M57147AU-01
82MAX
1500Vrms
380VDC
50mAX3
150mAX1
400mAX1
300mAX1
PM30RSF060
PM20CSJ060
pm10csj060
mitsubishi PM30CSJ060
PM50RSK060
380VDC
PM75RSA060
PM30ctj060-3
AC200
M57147AU-01
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mitsubishi PM30CSJ060
Abstract: PM20CSJ060 PM30RSF060 PM30ctj060-3 pm10csj060 PM20CS PM15CSJ060 PM20CTM060 M060 M57146U-01
Text: MITSUBISHI HYBRID IC M57146U-01 IPM POWER SUPPLY UNIT OUTLINE DRAWING 5.0 Lot No. 4-φ4.5 5.0 5.0 12 CN1 CN2 5.0 5.0 76.0±0.7 5.0 65.0±0.7 3 12 4 5 78 1 CN3 5.0 FEATURES ● Output . +15V, 50mAX3 +15V, 100mAX1
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M57146U-01
50mAX3
100mAX1
1500Vrms
M57146U-01
15VDC
380VDC.
100mA,
mitsubishi PM30CSJ060
PM20CSJ060
PM30RSF060
PM30ctj060-3
pm10csj060
PM20CS
PM15CSJ060
PM20CTM060
M060
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RA45H7687M1
Abstract: RA45H8994M1 PIN3D mitsubishi Lot No
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027-A Date : 10th May. 2007 Rev. date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1
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AN-900-027-A
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
RA45H7687M1
PIN3D
mitsubishi Lot No
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RD12MVP1
Abstract: RD12MVS1 mitsubishi 5218 5253 1007
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034-A Date : 10th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 135-175MHz RF characteristics data
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AN-VHF-034-A
RD12MVP1
135-175MHz
RD12MVP1:
059XA-G"
175MHz:
135/155/175MHz:
RD12MVS1
mitsubishi 5218
5253 1007
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555 application note
Abstract: RD09MUP2 ER48
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072-A Date: 6th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: M.Miyashita S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: “RD09MUP2” 400-520MHz RF characteristics data
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AN-UHF-072-A
RD09MUP2"
400-520MHz
RD09MUP2
RD09MUP2:
059XA-G"
400/520MHz
520MHz
3mm/50OHM
330pF
555 application note
ER48
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m64084
Abstract: m64084a M64084AGP KSS tcxo 12.8MHz Cordless telephone system block diagram M64884 DUAL XTAL OSCILLATOR IC TCXO KSS MITSUBISHI LOT NO. CODE mitsubishi Lot No. Year code
Text: MITSUBISHI ICs Cordless Telephone M64884FP Transistor for VCO,1st IF MIX,2-multiple circuit built-in 500MHz/1GHz Dual PLL Synthesizer 1.DESCRIPTION The M64884FP is a 2-sy stem 1-chip PLL f requency s y nthesizer IC designed of Analog cordless telephone f or North
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M64884FP
500MHz/1GHz
M64884FP
500MHz
M64884
m64084
m64084a
M64084AGP
KSS tcxo 12.8MHz
Cordless telephone system block diagram
M64884
DUAL XTAL OSCILLATOR IC
TCXO KSS
MITSUBISHI LOT NO. CODE
mitsubishi Lot No. Year code
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS ARY N I LIM E R P e n. atio chang cific o spe bject t l a fin su ot a its are is n m This etric li : e m ic Not e para Som 7531 Group . SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER • Clock generating circuit . Built-in type
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32P6B
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RD01MUS1
Abstract: 180PF
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019-B Date : 9th Jan. 2003 Rev.date : 7th Jan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 RF characteristics data
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AN-UHF-019-B
RD01MUS1
RD01MUS1.
RD01MUS1:
022XA"
136MHz
136MHz)
155MHz
155MHz)
175MHz
180PF
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RD01MUS1
Abstract: RD07MVS1
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006-A Date : 21th Aug. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band.
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AN-900-006-A
RD07MVS1
RD01MUS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
764-870MHz
RD07MVS1
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omron NT620C-ST141-E
Abstract: FX0-20MT-D Melsec fx2 FX0-14MT-D FX1-32MR FX0N-60MT FX1-24MR fx1-80mr FX1-48MR FX0N-40MT
Text: Cat No. V042-E1-1 PC CONNECTION Programmable Terminal OPERATION MANUAL PLC CONNECTION Programmable Terminal Operation Manual Produced April 1997 iii OMRON Product References All OMRON products are capitalized in this manual. The word “Unit” is also capitalized when it refers to an
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V042-E1-1
NT20S.
omron NT620C-ST141-E
FX0-20MT-D
Melsec fx2
FX0-14MT-D
FX1-32MR
FX0N-60MT
FX1-24MR
fx1-80mr
FX1-48MR
FX0N-40MT
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amp 827 578
Abstract: 2K291 RD01MUS1 RD07MVS1 amp 827 578 3 pin
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013-A Date : 11th Nov. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics
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AN-VHF-013-A
RD01MUS1
RD07MVS1
RD07MVS1
RD01MUS1:
2K291"
RD07MVS1:
031AA"
135-175MHz
amp 827 578
2K291
RD01MUS1
amp 827 578 3 pin
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4538 equivalent
Abstract: adj 2576 RD07MVS1 ire 530 AN-UHF-027-C
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-C Date : 16th Oct. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MVS1 RF characteristics data
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AN-UHF-027-C
RD07MVS1
RD07MVS1.
RD07MVS1:
031AA"
450-520MHz
450-520MHz)
4538 equivalent
adj 2576
ire 530
AN-UHF-027-C
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gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
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QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
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taiyosya
Abstract: grm188r11h RPC03 RD01MUS2 GRM1882 GRM2162C1H RD07MVS1B GRM1882C1H GRM2162C GRM2162C1H470GD01E
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085-A Date : 24th April 2007 Rev.date : 7th Jan. 2010 Prepared : Y. Takase Confirmed : S. Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz.
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AN-UHF-085-A
RD01MUS2
RD07MVS1B
RD01MUS2:
RD07MVS1B:
068YD"
400-470MHz
RPC03
taiyosya
grm188r11h
RD01MUS2
GRM1882
GRM2162C1H
GRM1882C1H
GRM2162C
GRM2162C1H470GD01E
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RD01MUS1
Abstract: RD07MVS1B
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028-A Date : 6th July. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Takase S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz.
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AN-900-028-A
RD01MUS1
RD07MVS1B
740-870MHz.
RD07MVS1B:
068YD-G"
RD01MUS1:
RD07MVS1B
740-870MHz
RD01MUS1
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RD07MVS1
Abstract: skam 199j 329J
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-C Date : 12th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD07MVS1 RF characteristics data SUBJECT:
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AN-UHF-018-C
RD07MVS1
RD07MVS1.
RD07MVS1:
025XA"
031AA"
470MHz
136MHz
136MHz)
155MHz
skam
199j
329J
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la2 d2 timer
Abstract: "7700 Family" Mitsubishi mitsubishi air conditioner 00004B marking p113 mitsubishi diode catalog mitsubishi inverter air conditioning mitsubishi p90 marking code P72 top marking mitsubishi rd series
Text: MI I L E MITSUBISHI MICROCOMPUTERS Y NAR M37754M6C-XXXGP M37754M6C-XXXHP . . tion hange c ifica pec ject to s l fina sub ot a its are is n his tric lim T : me ice Not e para Som PR SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION The M37754M6C-XXXGP and M37754M6C-XXXHP are single-chip
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M37754M6C-XXXGP
M37754M6C-XXXHP
16-BIT
M37754M6C-XXXGP
M37754M6C-XXXHP
100-pin
M37754M6C-XXXGP/HP
la2 d2 timer
"7700 Family" Mitsubishi
mitsubishi air conditioner
00004B
marking p113
mitsubishi diode catalog
mitsubishi inverter air conditioning
mitsubishi p90
marking code P72
top marking mitsubishi rd series
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RD02MUS1
Abstract: 146MHz 488-MHz
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017-B Date : 23th Dec. 2002 Rev.date : 7thJan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1 RF characteristics data
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AN-UHF-017-B
RD02MUS1
RD02MUS1.
RD02MUS1:
023XA"
146MHz
146MHz)
175MHz
175MHz)
440MHz
146MHz
488-MHz
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lem lt 2000
Abstract: M66244FP
Text: PRELIMINARY DATA SHEET MITSUBISHI <DIGITAL ASSP> M66244FP June 1998 Ver.8.0.0 High Speed Monolithic Pulse Width Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which
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M66244FP
M66244FP
72MHz.
45MHz
72MHz
16bit)
11bit)
lem lt 2000
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Untitled
Abstract: No abstract text available
Text: P R E U M tfM A R Y D A T A S H E E T M it s u b is h i < d ig it a l a s s p > M66244FP June 1998 Ver.8.0.0 High Speed M onolithic Pulse W idth Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which
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M66244FP
M66244FP
72MHz.
45MHz
72MHz
16bit)
D02b411
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4000B
Abstract: M74HC4078 M74HC4078P
Text: M IT S U B IS H I HIGH S P E E D C M O S M 74HC4078P 8 -IN P U T P O S IT IV E N O R /O R G A TE DESCRIPTION T h e M 7 4 H C 4 0 7 8 is a sem ico nductor in teg rated circuit con sisting of an 8-inp ut p o sitive-logic N O R /O R , usable as a n e g a tiv e -lo g ic N A N D /A N D gate.
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M74HC4078P
M74HC4078
4000B
M74HC4078P
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ss 6616
Abstract: 9316 ROM transistor A916 IC B316 transistor d716 b816 BA 8A16 8316 rOM transistor B616 b716 transistor
Text: MITSUBISHI MICROCOMPUTERS M35053-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • • • • • • • • • • • • • • • • • • APPLICATION TV, VCR, Movie REV.1.1 CP1 ← TESTA CS SCK SIN AC → → ↔
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M35053-XXXSP/FP
20P4B
M35053-XXXFP
M35053-XXXSP/FP
20P2Q-A
20-PIN
ss 6616
9316 ROM
transistor A916
IC B316
transistor d716
b816
BA 8A16
8316 rOM
transistor B616
b716 transistor
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