mitsubishi lot number
Abstract: No abstract text available
Text: Related to M30201 group devices. GRADE A MESC TECHNICAL NEWS No.M16C-47-0003 M30201 Flash Memory Version Cautions for Using Flash Programming Standard Serial I/O Mode 1. Affected devices • M30201F6FP, M30201F6TFP Mitsubishi lot number is "0XXXXX". • M30201F6SP (Mitsubishi lot number is "0XXXXX".)
|
Original
|
PDF
|
M30201
M16C-47-0003
M30201F6FP,
M30201F6TFP
M30201F6SP
mitsubishi lot number
|
MGFS36E2527
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE. 36E 2527 Lot No. FEATURES • • • • •
|
Original
|
PDF
|
MGFS36E2527
MGFS36E2527
27dBm
50ohms
IEEE802
16e-2005
350degC.
September-2007
|
mitsubishi Lot No
Abstract: mitsubishi vcb
Text: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •
|
Original
|
PDF
|
MGFS36E2325
MGFS36E2325
27dBm
50ohms
IEEE802
16e-2005
350degC.
November-2007
mitsubishi Lot No
mitsubishi vcb
|
SWT-9
Abstract: ic 3845 pin diagram 36e 2527 diagram TA 306 8 pin ic POUT25
Text: MITSUBISHI SEMICONDUCTOR MGFS36E3436A 3.4-3.6GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E3436A is a GaAs RF amplifier designed for WiMAX CPE. 36E 3436A 2527 Lot No. FEATURES • • •
|
Original
|
PDF
|
MGFS36E3436A
MGFS36E3436A
25dBm
27dBm
IEEE802
16e-2005
350degC.
July-2008
SWT-9
ic 3845 pin diagram
36e 2527
diagram TA 306 8 pin ic
POUT25
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •
|
Original
|
PDF
|
MGFS36E2325
MGFS36E2325
27dBm
50ohms
IEEE802
16e-2005
350degC.
December-2007
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •
|
Original
|
PDF
|
MGFS36E2325
MGFS36E2325
27dBm
50ohms
IEEE802
16e-2005
350degC.
September-2007
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE. 36E 2527 Lot No. FEATURES • • • • •
|
Original
|
PDF
|
MGFS36E2527
MGFS36E2527
27dBm
50ohms
IEEE802
16e-2005
350degC.
December-2007
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •
|
Original
|
PDF
|
MGFS36E2325
MGFS36E2325
27dBm
50ohms
IEEE802
16e-2005
-30degC
25degC
60degC
|
MGFS36E2527
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2527 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2527 Lot No. FEATURES • • • • •
|
Original
|
PDF
|
MGFS36E2527
MGFS36E2527
27dBm
50ohms
IEEE802
16e-2005
350degC.
January-2008
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2527 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2527 Lot No. FEATURES • • • • •
|
Original
|
PDF
|
MGFS36E2527
MGFS36E2527
27dBm
50ohms
IEEE802
16e-2005
January-2008
|
mitsubishi vcb
Abstract: MGFS36E2325 16e-2005
Text: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • •
|
Original
|
PDF
|
MGFS36E2325
MGFS36E2325
27dBm
50ohms
IEEE802
16e-2005
350degC.
January-2008
mitsubishi vcb
16e-2005
|
PM30RSF060
Abstract: PM20CSJ060 pm10csj060 mitsubishi PM30CSJ060 PM50RSK060 380VDC PM75RSA060 PM30ctj060-3 AC200 M57147AU-01
Text: MITSUBISHI HYBRID IC M57147AU-01 IPM POWER SUPPLY UNIT OUTLINE DRAWING Lot No M57147AU-01 XXXX 1 18 36 Pin No 19 1.6 33 MAX 82MAX 0.35±0.2 80.35 2.54 0.55±0.1 2.54✕17=43 Electrical isolation between input and outputs . 1500Vrms 1minute
|
Original
|
PDF
|
M57147AU-01
82MAX
1500Vrms
380VDC
50mAX3
150mAX1
400mAX1
300mAX1
PM30RSF060
PM20CSJ060
pm10csj060
mitsubishi PM30CSJ060
PM50RSK060
380VDC
PM75RSA060
PM30ctj060-3
AC200
M57147AU-01
|
mitsubishi PM30CSJ060
Abstract: PM20CSJ060 PM30RSF060 PM30ctj060-3 pm10csj060 PM20CS PM15CSJ060 PM20CTM060 M060 M57146U-01
Text: MITSUBISHI HYBRID IC M57146U-01 IPM POWER SUPPLY UNIT OUTLINE DRAWING 5.0 Lot No. 4-φ4.5 5.0 5.0 12 CN1 CN2 5.0 5.0 76.0±0.7 5.0 65.0±0.7 3 12 4 5 78 1 CN3 5.0 FEATURES ● Output . +15V, 50mAX3 +15V, 100mAX1
|
Original
|
PDF
|
M57146U-01
50mAX3
100mAX1
1500Vrms
M57146U-01
15VDC
380VDC.
100mA,
mitsubishi PM30CSJ060
PM20CSJ060
PM30RSF060
PM30ctj060-3
pm10csj060
PM20CS
PM15CSJ060
PM20CTM060
M060
|
39E2527A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device
|
Original
|
PDF
|
MGFS39E2527A-01
39E2527A
30dBm
64QAM,
MGFS39E2527A
39E2527A
|
|
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28
|
Original
|
PDF
|
MGFS39E3336-01
39E3336
30dBm
64QAM,
|
39E3336
Abstract: MGFS39E3336 SWT-9 GRM188B31E105KA75 spectrum emission mask wimax MGFS39E3336-01 GRM155B11H1 160kO GRM188B31E
Text: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28
|
Original
|
PDF
|
MGFS39E3336-01
39E3336
30dBm
64QAM,
40deg
39E3336
MGFS39E3336
SWT-9
GRM188B31E105KA75
spectrum emission mask wimax
MGFS39E3336-01
GRM155B11H1
160kO
GRM188B31E
|
mitsubishi Lot No
Abstract: AN-900-027 RA45H7687M1 RA45H8994M1 MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027 Date : 10th May. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL:
|
Original
|
PDF
|
AN-900-027
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
mitsubishi Lot No
AN-900-027
RA45H7687M1
MITSUBISHI APPLICATION NOTE RF POWER
|
RA45H7687M1
Abstract: RA45H8994M1 PIN3D mitsubishi Lot No
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027-A Date : 10th May. 2007 Rev. date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1
|
Original
|
PDF
|
AN-900-027-A
RA45H8994M1
RA45H7687M1
RA45H8994M1/7687M1
50ohm,
06XXA
835MHz
RA45H7687M1
PIN3D
mitsubishi Lot No
|
74LS04D
Abstract: mitsubishi lot code HBM 00-01 74ls04d datasheet TI Ji Bipolar LINEAR TECHNOLOGY date code JI Bipolar 500 mold compound JI Linear Bipolar Products TL 170C
Text: TEXAS INSTRUMENTS Final Notification of Mitsubishi Silicon of America MSA Second Source Wafer Qualification for Starting 125mm Substrates in Sherman, Texas Wafer Fab July 22, 1999 Abstract The Texas Instruments Wafer Fabrication Facility in Sherman, Texas (SFAB) has qualified Mitsubishi
|
Original
|
PDF
|
125mm
85C85
260deg
74LS04D
mitsubishi lot code
HBM 00-01
74ls04d datasheet
TI Ji Bipolar
LINEAR TECHNOLOGY date code
JI Bipolar
500 mold compound
JI Linear Bipolar Products
TL 170C
|
RD12MVP1
Abstract: RD12MVS1
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034 Date: 10th Feb. 2006 Prepared: E.Akiyama S.Kametani Confirmed: SUBJECT: T.Ohkawa RD12MVP1 135-175MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout
|
Original
|
PDF
|
AN-VHF-034
RD12MVP1
135-175MHz
RD12MVP1:
059XA-G"
175MHz:
135/155/175MHz:
RD12MVS1
|
RD12MVP1
Abstract: RD12MVS1 mitsubishi 5218 5253 1007
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034-A Date : 10th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 135-175MHz RF characteristics data
|
Original
|
PDF
|
AN-VHF-034-A
RD12MVP1
135-175MHz
RD12MVP1:
059XA-G"
175MHz:
135/155/175MHz:
RD12MVS1
mitsubishi 5218
5253 1007
|
RD09MUP2
Abstract: 555 application note
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072 Date: 6th Feb. 2006 Prepared: M.Miyashita S.Kametani Confirmed: SUBJECT: T.Ohkawa “RD09MUP2” 400-520MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout
|
Original
|
PDF
|
AN-UHF-072
RD09MUP2"
400-520MHz
RD09MUP2
RD09MUP2:
059XA-G"
400/520MHz
520MHz
3mm/50OHM
330pF
555 application note
|
555 application note
Abstract: RD09MUP2 ER48
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072-A Date: 6th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: M.Miyashita S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: “RD09MUP2” 400-520MHz RF characteristics data
|
Original
|
PDF
|
AN-UHF-072-A
RD09MUP2"
400-520MHz
RD09MUP2
RD09MUP2:
059XA-G"
400/520MHz
520MHz
3mm/50OHM
330pF
555 application note
ER48
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
Original
|
PDF
|
MGF4953A
MGF4953A
12GHz
000pcs/reel
|