Untitled
Abstract: No abstract text available
Text: APTM50HM65FT3G Full - Bridge MOSFET Power Module Application • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies 13 14 Q1 Q3 18 11 22 Features Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance
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APTM50HM65FT3G
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Untitled
Abstract: No abstract text available
Text: ACPL-333J 2.5 Amp Output Current IGBT Gate Driver Optocoupler with Integrated VCE Desaturation Detection, UVLO Fault Status Feedback, Active Miller Clamp and Auto-Fault Reset Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available;
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ACPL-333J
ACPL-333J
AN5314
AN5315
AN1087
AN1043
AV02-0310EN
AV02-0726EN
AV02-1087EN
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337j
Abstract: acpl-337j acpl337j
Text: ACPL-337J 4.0 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection, Active Miller Clamping, Fault and UVLO Status Feedback Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product
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ACPL-337J
ACPL-337J
AV02-4390EN
337j
acpl337j
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APT77N60JC3
Abstract: No abstract text available
Text: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package
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APT77N60JC3
OT-227
APT77N60JC3
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A1270
Abstract: 55C160 APT84M50B2 APT84M50L MIC4452
Text: APT84M50B2 APT84M50L 500V, 84A, 0.065Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT84M50B2
APT84M50L
O-264
O-247
A1270
55C160
APT84M50B2
APT84M50L
MIC4452
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MIC4452
Abstract: APT8M100B APT8M100S
Text: APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT8M100B
APT8M100S
MIC4452
APT8M100B
APT8M100S
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8114
Abstract: APT12M80B APT12M80S MIC4452
Text: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT12M80B
APT12M80S
8114
APT12M80B
APT12M80S
MIC4452
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APT9M100B
Abstract: APT9M100S MIC4452
Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT9M100B
APT9M100S
APT9M100B
APT9M100S
MIC4452
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APT0406
Abstract: APT0501 APT0502 d90a
Text: APTM50AM38STG Phase leg Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NT C2 VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM50AM38STG
Soldera33V
APT0406
APT0501
APT0502
d90a
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APT7M120B
Abstract: APT7M120S MIC4452
Text: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT7M120B
APT7M120S
APT7M120B
APT7M120S
MIC4452
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calculating rectifier circuits MTBF
Abstract: bimetal transformer mtbf MIL-HDBK-217F CAPACITOR chip mtbf 217F MIL-HDBK-217E ART2815T AN-1078 MIL-HDBK217F
Text: Application Note AN-1078 An Examination of Changes Imposed by Revised Hybrid Models When Calculating MTBF Values using MIL-HDBK 217F, Notice 1 & 2 By Richard Miller, Director Space Products Table of Contents Page Resistors .1
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AN-1078
calculating rectifier circuits MTBF
bimetal
transformer mtbf
MIL-HDBK-217F
CAPACITOR chip mtbf
217F
MIL-HDBK-217E
ART2815T
AN-1078
MIL-HDBK217F
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APT56M50B2
Abstract: APT56M50L MIC4452
Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT56M50B2
APT56M50L
O-264
O-247
APT56M50B2
APT56M50L
MIC4452
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APT58M80J
Abstract: MIC4452
Text: APT58M80J 800V, 60A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT58M80J
E145592
APT58M80J
MIC4452
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APT0502
Abstract: APT0601 APTM100UM45DAG
Text: APTM100UM45DAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single switch with Series diode MOSFET Power Module SK S D G DK S DK Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM100UM45DAG
APT0502
APT0601
APTM100UM45DAG
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APT0502
Abstract: APT0601 APTM100UM65DAG
Text: APTM100UM65DAG VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Single switch with Series diode MOSFET Power Module Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM100UM65DAG
APT0502
APT0601
APTM100UM65DAG
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Untitled
Abstract: No abstract text available
Text: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge
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FDB070AN06A0
FDP070AN06A0
O-220AB
O-263AB
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4n7m
Abstract: CM322522-820JL SDR0604 SRR1260-681K bourns inductors PM1210-R27J PM40-1R2K SRR4018-100Y 2n2m pm1355
Text: INDUCTIVE COMPONENTS Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers June 2007 UPDATE - Bourns Inductors Replacing JW Miller Models The current summary of Bourns® inductor models that will be replacing JW Miller models is attached.
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aDecember-2007
PMH1206
PMH1806
PMH1812
PMH1206-501
PMH1206-601
4n7m
CM322522-820JL
SDR0604
SRR1260-681K
bourns inductors
PM1210-R27J
PM40-1R2K
SRR4018-100Y
2n2m
pm1355
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PM105S-470M
Abstract: No abstract text available
Text: INDUCTIVE COMPONENTS Last Time Buy - JW Miller Models PM63S and PM105S Riverside, California - July 1, 2008 - JW Miller® Models PM63S and PM105S were discontinued by JW Miller before they were acquired by Bourns in April 2006. We have been supplying small
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PM63S
PM105S
PM105S
SRR4028,
PM105SB
PM105S.
PM105S-470M
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JW Miller
Abstract: No abstract text available
Text: INDUCTIVE COMPONENTS Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers March, 2009 FINAL REMINDER Electrical and Physical Changes to Specified JW Miller SMD Models
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IC0908
JW Miller
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Untitled
Abstract: No abstract text available
Text: ACPL-32JT Automotive 2.5 Amp Gate Drive Optocoupler with Integrated Flyback Controller for Isolated DC-DC Converter, Integrated IGBT Desat Overcurrent Sensing, Miller Current Clamping and UVLO Feedback Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available;
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ACPL-32JT
AV02-4256EN
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APT0502
Abstract: APT0601 APTM120UM70FAG dk 434
Text: APTM120UM70FAG Single switch MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control SK S D Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance
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APTM120UM70FAG
APTM120UM70FAG
APT0502
APT0601
dk 434
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APT18M80B
Abstract: APT18M80S MIC4452
Text: APT18M80B APT18M80S 800V, 18A, 0.56Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT18M80B
APT18M80S
APT18M80B
APT18M80S
MIC4452
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APT0406
Abstract: APT0502 APTM120H57FT3G
Text: APTM120H57FT3G Full - Bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 Q3 11 22 Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance
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APTM120H57FT3G
APTM120H57FT3G
APT0406
APT0502
APTM120H57FT3G
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APT0406
Abstract: APT0501 APT0502 APTM20HM16FTG
Text: APTM20HM16FTG Full - Bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q3 Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge
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APTM20HM16FTG
APT0406
APT0501
APT0502
APTM20HM16FTG
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