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    Microchip Technology Inc APT18M80S

    MOSFET N-CH 800V 19A D3PAK
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    APT18M80S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT18M80S Microsemi N-Channel MOSFET Original PDF

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    APT18M80B

    Abstract: APT18M80S MIC4452
    Text: APT18M80B APT18M80S 800V, 18A, 0.56Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT18M80B APT18M80S APT18M80B APT18M80S MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT18M80B APT18M80S

    Untitled

    Abstract: No abstract text available
    Text: APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT18M80B APT18M80S

    APT18M80B

    Abstract: APT18M80S MIC4452
    Text: APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT18M80B APT18M80S APT18M80B APT18M80S MIC4452