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    APT8M100S Datasheets (1)

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    APT8M100S Microsemi N-Channel MOSFET Original PDF

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    MIC4452

    Abstract: APT8M100B APT8M100S
    Text: APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT8M100B APT8M100S MIC4452 APT8M100B APT8M100S

    APT8M100B

    Abstract: APT8M100S MIC4452 microsemi mosfet 1000V
    Text: APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT8M100B APT8M100S APT8M100B APT8M100S MIC4452 microsemi mosfet 1000V

    Untitled

    Abstract: No abstract text available
    Text: APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT8M100B APT8M100S swit138)