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    Microchip Technology Inc APT7M120S

    MOSFET N-CH 1200V 8A D3PAK
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    APT7M120S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT7M120S Microsemi N-Channel MOSFET Original PDF

    APT7M120S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT7M120B

    Abstract: APT7M120S MIC4452
    Text: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT7M120B APT7M120S APT7M120B APT7M120S MIC4452

    mosfet 1200V 3A

    Abstract: APT7M120B APT7M120S MIC4452 MOSFET 1200v 3*a
    Text: APT7M120B APT7M120S 1200V, 7A, 2.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT7M120B APT7M120S mosfet 1200V 3A APT7M120B APT7M120S MIC4452 MOSFET 1200v 3*a

    Untitled

    Abstract: No abstract text available
    Text: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT7M120B APT7M120S

    MOSFET 1200v 3a

    Abstract: No abstract text available
    Text: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original
    PDF APT7M120B APT7M120S MOSFET 1200v 3a