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    MIL NPN HIGH VOLTAGE TRANSISTOR 500V Search Results

    MIL NPN HIGH VOLTAGE TRANSISTOR 500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation

    MIL NPN HIGH VOLTAGE TRANSISTOR 500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AFPE214325

    Abstract: FPG-PRT-S matsua stepping motors
    Text: OVERVIEW PROGRAMMABLE LOGIC CONTROLLERS The Panasonic PLC range Advantages of PLC control Powerful hardware solutions Panasonic PLCs offer an outstanding price-performance ratio which incorporates numerous functions into a very compact body. Even in the smallest size they provide a powerful instruction set which allows the


    Original     		PDF

    AFP0801

    Abstract: No abstract text available
    Text: smallPLC_015-074.QX 2004.6.16 2:53 PM Page 33 FP0 Suitable for installation virtually anywhere. • Features I/O10 points Up to 128 I/O 1. Measures only W25 ҂ H90 ҂ D60 mm 2. Expandable 128 points by adding three units. This PLC is a stacking expansion type


    Original     		PDF I/O10 134inch 984inch 105mm 500-step 10-pin) AFP0553 AFP0523 AXM110915 AFP0801

    panasonic inverter manual vf 200

    Abstract: panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z
    Text: 02/04/2013 Overview Panasonic automation products Panasonic offers a broad spectrum of products for all automation tasks, sensors, PLCs, HMIs, Servo Drives and FA Components. Along with our service philosophy to advise and take care of our customers, products


    Original     		PDF RM1205-9, panasonic inverter manual vf 200 panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z

    laser range finder schematics

    Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
    Text: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals


    Original     		PDF

    tf 115 250v 2a

    Abstract: BUL53B
    Text: BUL53B–SM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA 11.5 2.0 0.25 3.5 1 3.0 3 • FAST SWITCHING tf = 100ns 9.0 1.5 15.8 4.6 3.5 2 • HIGH ENERGY RATING FEATURES 8.5 TO220 Ceramic Surface Mount Package


    Original     		PDF BUL53BSM 100ns) 100mA 10MHz tf 115 250v 2a BUL53B

    npn triple diffused transistor 500v 8a

    Abstract: No abstract text available
    Text: Mil =X= mi SEME BUL65B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE


    OCR Scan     		PDF BUL65B T0251) npn triple diffused transistor 500v 8a

    LAB 250 LB

    Abstract: alc100
    Text: Mil =X= mi SEME BUL63B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE


    OCR Scan     		PDF BUL63B T0251) LAB 250 LB alc100

    LAB 250 LB

    Abstract: No abstract text available
    Text: Illl = & = Illl SEME BUL53B-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA • CERAMIC SURFACE MOUNT PACKAGE :- ► , • FULL MIL/AEROSPACE TEMPERATURE RANGE 2.0 3.5 < ► 4— * 9'f <-


    OCR Scan     		PDF BUL53B-SM 100ns) T0220 100mA 100mA 10MHz LAB 250 LB

    MIL npn high voltage transistor 500V

    Abstract: No abstract text available
    Text: Mil = ^ = INI BUL52AFI SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 Designed for use in electronic ballast applications 3.6 Dia. • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3


    OCR Scan     		PDF BUL52AFI T0220 MIL npn high voltage transistor 500V

    Semefab

    Abstract: MIL npn high voltage transistor 1000V
    Text: Mil =X= mi SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.5 10.2 f*-► , 1.3 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL54A T0220 100mA Semefab MIL npn high voltage transistor 1000V

    Untitled

    Abstract: No abstract text available
    Text: Mil = ^ = INI BUL55B SEME LAB MECHANICAL DATA Dimensions in mm f* 10.2 -►, 4.5 f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL55B T0220

    Untitled

    Abstract: No abstract text available
    Text: Mil = ^ = IN I BUL53B SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL53B T0220

    Untitled

    Abstract: No abstract text available
    Text: Mil =X= mi SEME BUL52A LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 f*-► , r*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 3.6 Dia. • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL52A T0220 100mA

    Untitled

    Abstract: No abstract text available
    Text: Illl Illl BUL53B-SM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11 .fi • CERAMIC SURFACE MOUNT PACKAGE —*i 3.0 ri-H 0.25 • FULL MIL/AEROSPACE TEMPERATURE RANGE • SCREENING OPTIONS FOR MILITARY AND


    OCR Scan     		PDF BUL53B-SM 100ns) T0220 100mA D0D14Ã

    SOT123

    Abstract: SDT723 NPN Transistor VCEO 1000V BU208 NPN Transistor 600V SDT18801 SDT802
    Text: Cintron Devices. Inc IPtMDPQD ? ©ÂTTÂIL VERY HIGH VOLTAGE CHIP NUMBER NPN PASSIVATED POWER TRANSISTOR CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available Also available on:


    OCR Scan     		PDF 305mm) 200PF 68C/W 200PF BU208, SDT723, SDT802, SDT18801 SOT123 SDT723 NPN Transistor VCEO 1000V BU208 NPN Transistor 600V SDT18801 SDT802

    NPN Transistor 15A 400V to3

    Abstract: 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 SDT13301-SDTI3305 transistor 500v 0.5a transistor npn 10mhz 500v S65C
    Text: ^/òlitron [^ ©tSDCT ©ÄTTÄIL Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available


    OCR Scan     		PDF 305mm) JAN2N6546, 2N6547. 2N6561, 2N6563, SDT13301-SDTI3305 NPN Transistor 15A 400V to3 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 transistor 500v 0.5a transistor npn 10mhz 500v S65C

    ic 7905

    Abstract: transistor 7905 7905 7904 7905 a 7905 IC vbe 10v, vce 500v NPN Transistor VCB-600V chip die npn transistor
    Text: g Xnooab l^bo0„^ STX 7904 /¡2905CHIP HIGH VOLTAGE NPN TRANSISTOR MESA PASSIVATED CONTACT METALLIZATION Base/Emitter: Collector: > 30,000 A Aluminum > 2,000 A Evaporated Gold ASSEMBLY RECOMMENDATIONS Contact Area: .014 x .018 PARAMETER TEST CONDITIONS *


    OCR Scan     		PDF 100uA 500mA 500mA, 100mA ic 7905 transistor 7905 7905 7904 7905 a 7905 IC vbe 10v, vce 500v NPN Transistor VCB-600V chip die npn transistor

    MIL npn high voltage transistor 1000V

    Abstract: SDT802 NPN Transistor VCEO 1000V
    Text: «9 y) ir earn® Oevices. Inc. VERY HIGH VOLTAGE CHIP NUMBER NPN PASSIVATED POWER TRANSISTOR CONTACT METALLIZATION Base an d emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel Silver” also av ailab le) Also av ailab le on:


    OCR Scan     		PDF 305mm) 200PF 200PF BU208. SDT723, SDT802, SDT18801 MIL npn high voltage transistor 1000V SDT802 NPN Transistor VCEO 1000V

    NPN Transistor 600V

    Abstract: 2N5466 2N5468 JAN2N3902 JAN2N5157 SDT401 SDT430
    Text: ^Jolitran IF > fö @ lü J T r © A T T M ,® < Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER FORMERLY 42 dH CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 203mm) toN2N3902, JAN2N5157, SDT401, SDT430, 2N5466, 2N5468 NPN Transistor 600V 2N5466 JAN2N3902 JAN2N5157 SDT401 SDT430

    ocs03

    Abstract: JAN2N5664 JAN2N5667 SDT40301 SDT40304 wire CAV aluminum 1u 400v
    Text: Contran « » © T T ©ÄTTM= Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER (FORMERLY 40 CONTACT METALLIZATION A Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 203mm) ocs03 JAN2N5664 JAN2N5667 SDT40301 SDT40304 wire CAV aluminum 1u 400v

    Untitled

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES INC 95D 02 8 4 7 TS DE IF>Ca [DmJ Tr ©ÄTTM,®© Devices, Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 40 CHIP N U M BER CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum


    OCR Scan     		PDF 203mm)

    Untitled

    Abstract: No abstract text available
    Text: INI INI SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3 • HIGH VOLTAGE


    OCR Scan     		PDF BUL54AFI 100mA

    Untitled

    Abstract: No abstract text available
    Text: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)


    OCR Scan     		PDF 83mra) 203mm) JAN2N3902, JAN2N5157, SDT401, SDT430, 2N5466, 2N5468

    Untitled

    Abstract: No abstract text available
    Text: INI = ^ = INI SEME BUL62A LAB MECHANICAL DATA Dimensions in mm inches 2.18(0.086) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL62A O-251)