AFPE214325
Abstract: FPG-PRT-S matsua stepping motors
Text: OVERVIEW PROGRAMMABLE LOGIC CONTROLLERS The Panasonic PLC range Advantages of PLC control Powerful hardware solutions Panasonic PLCs offer an outstanding price-performance ratio which incorporates numerous functions into a very compact body. Even in the smallest size they provide a powerful instruction set which allows the
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AFP0801
Abstract: No abstract text available
Text: smallPLC_015-074.QX 2004.6.16 2:53 PM Page 33 FP0 Suitable for installation virtually anywhere. • Features I/O10 points Up to 128 I/O 1. Measures only W25 ҂ H90 ҂ D60 mm 2. Expandable 128 points by adding three units. This PLC is a stacking expansion type
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I/O10
134inch
984inch
105mm
500-step
10-pin)
AFP0553
AFP0523
AXM110915
AFP0801
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PDF
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panasonic inverter manual vf 200
Abstract: panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z
Text: 02/04/2013 Overview Panasonic automation products Panasonic offers a broad spectrum of products for all automation tasks, sensors, PLCs, HMIs, Servo Drives and FA Components. Along with our service philosophy to advise and take care of our customers, products
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RM1205-9,
panasonic inverter manual vf 200
panasonic inverter manual vf 100
MBDHT2510 MANUAL
npn transistor w26
CY-122A-P-Z
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PDF
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laser range finder schematics
Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
Text: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals
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tf 115 250v 2a
Abstract: BUL53B
Text: BUL53BSM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA 11.5 2.0 0.25 3.5 1 3.0 3 FAST SWITCHING tf = 100ns 9.0 1.5 15.8 4.6 3.5 2 HIGH ENERGY RATING FEATURES 8.5 TO220 Ceramic Surface Mount Package
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BUL53BSM
100ns)
100mA
10MHz
tf 115 250v 2a
BUL53B
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PDF
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npn triple diffused transistor 500v 8a
Abstract: No abstract text available
Text: Mil =X= mi SEME BUL65B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE
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BUL65B
T0251)
npn triple diffused transistor 500v 8a
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PDF
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LAB 250 LB
Abstract: alc100
Text: Mil =X= mi SEME BUL63B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE
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BUL63B
T0251)
LAB 250 LB
alc100
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PDF
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LAB 250 LB
Abstract: No abstract text available
Text: Illl = & = Illl SEME BUL53B-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA • CERAMIC SURFACE MOUNT PACKAGE :- ► , • FULL MIL/AEROSPACE TEMPERATURE RANGE 2.0 3.5 < ► 4— * 9'f <-
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BUL53B-SM
100ns)
T0220
100mA
100mA
10MHz
LAB 250 LB
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PDF
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MIL npn high voltage transistor 500V
Abstract: No abstract text available
Text: Mil = ^ = INI BUL52AFI SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 Designed for use in electronic ballast applications 3.6 Dia. • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3
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BUL52AFI
T0220
MIL npn high voltage transistor 500V
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Semefab
Abstract: MIL npn high voltage transistor 1000V
Text: Mil =X= mi SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.5 10.2 f*-► , 1.3 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
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BUL54A
T0220
100mA
Semefab
MIL npn high voltage transistor 1000V
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PDF
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Untitled
Abstract: No abstract text available
Text: Mil = ^ = INI BUL55B SEME LAB MECHANICAL DATA Dimensions in mm f* 10.2 -►, 4.5 f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
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BUL55B
T0220
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PDF
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Untitled
Abstract: No abstract text available
Text: Mil = ^ = IN I BUL53B SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
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BUL53B
T0220
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PDF
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Untitled
Abstract: No abstract text available
Text: Mil =X= mi SEME BUL52A LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 f*-► , r*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 3.6 Dia. • SEMEFAB DESIGNED AND DIFFUSED DIE
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BUL52A
T0220
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: Illl Illl BUL53B-SM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11 .fi • CERAMIC SURFACE MOUNT PACKAGE —*i 3.0 ri-H 0.25 • FULL MIL/AEROSPACE TEMPERATURE RANGE • SCREENING OPTIONS FOR MILITARY AND
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BUL53B-SM
100ns)
T0220
100mA
D0D14Ã
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SOT123
Abstract: SDT723 NPN Transistor VCEO 1000V BU208 NPN Transistor 600V SDT18801 SDT802
Text: Cintron Devices. Inc IPtMDPQD ? ©ÂTTÂIL VERY HIGH VOLTAGE CHIP NUMBER NPN PASSIVATED POWER TRANSISTOR CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available Also available on:
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305mm)
200PF
68C/W
200PF
BU208,
SDT723,
SDT802,
SDT18801
SOT123
SDT723
NPN Transistor VCEO 1000V
BU208
NPN Transistor 600V
SDT18801
SDT802
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NPN Transistor 15A 400V to3
Abstract: 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 SDT13301-SDTI3305 transistor 500v 0.5a transistor npn 10mhz 500v S65C
Text: ^/òlitron [^ ©tSDCT ©ÄTTÄIL Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available
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305mm)
JAN2N6546,
2N6547.
2N6561,
2N6563,
SDT13301-SDTI3305
NPN Transistor 15A 400V to3
2N6563
350V transistor npn 15a
2N6547
2N6561
JAN2N6546
transistor 500v 0.5a
transistor npn 10mhz 500v
S65C
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ic 7905
Abstract: transistor 7905 7905 7904 7905 a 7905 IC vbe 10v, vce 500v NPN Transistor VCB-600V chip die npn transistor
Text: g Xnooab l^bo0„^ STX 7904 /¡2905CHIP HIGH VOLTAGE NPN TRANSISTOR MESA PASSIVATED CONTACT METALLIZATION Base/Emitter: Collector: > 30,000 A Aluminum > 2,000 A Evaporated Gold ASSEMBLY RECOMMENDATIONS Contact Area: .014 x .018 PARAMETER TEST CONDITIONS *
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100uA
500mA
500mA,
100mA
ic 7905
transistor 7905
7905
7904
7905 a
7905 IC
vbe 10v, vce 500v NPN Transistor
VCB-600V
chip die npn transistor
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PDF
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MIL npn high voltage transistor 1000V
Abstract: SDT802 NPN Transistor VCEO 1000V
Text: «9 y) ir earn® Oevices. Inc. VERY HIGH VOLTAGE CHIP NUMBER NPN PASSIVATED POWER TRANSISTOR CONTACT METALLIZATION Base an d emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel Silver” also av ailab le) Also av ailab le on:
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305mm)
200PF
200PF
BU208.
SDT723,
SDT802,
SDT18801
MIL npn high voltage transistor 1000V
SDT802
NPN Transistor VCEO 1000V
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NPN Transistor 600V
Abstract: 2N5466 2N5468 JAN2N3902 JAN2N5157 SDT401 SDT430
Text: ^Jolitran IF > fö @ lü J T r © A T T M ,® < Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER FORMERLY 42 dH CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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203mm)
toN2N3902,
JAN2N5157,
SDT401,
SDT430,
2N5466,
2N5468
NPN Transistor 600V
2N5466
JAN2N3902
JAN2N5157
SDT401
SDT430
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PDF
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ocs03
Abstract: JAN2N5664 JAN2N5667 SDT40301 SDT40304 wire CAV aluminum 1u 400v
Text: Contran « » © T T ©ÄTTM= Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER (FORMERLY 40 CONTACT METALLIZATION A Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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203mm)
ocs03
JAN2N5664
JAN2N5667
SDT40301
SDT40304
wire CAV
aluminum 1u 400v
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PDF
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Untitled
Abstract: No abstract text available
Text: 8368602 SOLITRON DEVICES INC 95D 02 8 4 7 TS DE IF>Ca [DmJ Tr ©ÄTTM,®© Devices, Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 40 CHIP N U M BER CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum
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203mm)
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PDF
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Untitled
Abstract: No abstract text available
Text: INI INI SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3 • HIGH VOLTAGE
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OCR Scan
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BUL54AFI
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)
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OCR Scan
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83mra)
203mm)
JAN2N3902,
JAN2N5157,
SDT401,
SDT430,
2N5466,
2N5468
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PDF
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Untitled
Abstract: No abstract text available
Text: INI = ^ = INI SEME BUL62A LAB MECHANICAL DATA Dimensions in mm inches 2.18(0.086) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
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BUL62A
O-251)
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PDF
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